JP4431901B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4431901B2 JP4431901B2 JP2007010572A JP2007010572A JP4431901B2 JP 4431901 B2 JP4431901 B2 JP 4431901B2 JP 2007010572 A JP2007010572 A JP 2007010572A JP 2007010572 A JP2007010572 A JP 2007010572A JP 4431901 B2 JP4431901 B2 JP 4431901B2
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Description
集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、
有する。本発明によれば、配線を通じて外部端子から熱を伝えるだけでなく、金属層にも熱を伝え、第2の貫通穴を通して金属層から放熱することができる。これによって、半導体装置がマザーボードに実装されたときに、マザーボードに与える熱の影響を減らすことができる。
(2)この半導体装置において、
前記第2の貫通穴は、前記金属層の端部及び前記金属層の端部に隣接する前記第1の樹脂層の一部を、前記第2の樹脂層から露出させるように形成されていてもよい。
(3)この半導体装置において、
前記第2の貫通穴は、前記金属層の外周縁全体を、前記第2の樹脂層から露出させるように形成されていてもよい。
(4)この半導体装置において、
前記金属層の前記第1の樹脂層と平行な面は多角形をなし、
前記第2の貫通穴は、前記金属層の角部を、前記第2の樹脂層から露出させるように形成されていてもよい。
(5)この半導体装置において、
前記第2の樹脂層は前記金属層の外周縁全体を覆っていてもよい。
(6)この半導体装置において、
前記第2の樹脂層は、前記金属層とオーバーラップする第3の貫通穴をさらに有し、
前記第3の貫通穴内で前記金属層上に設けられた金属端子をさらに有してもよい。
(7)この半導体装置において、
前記第2の樹脂層には複数の前記第3の貫通穴が形成され、
前記金属端子が、前記複数の第3の貫通穴の各々に少なくとも一つ設けられることで、前記金属端子は複数設けられ、
前記複数の金属端子は、平行な複数の第1の直線と、前記複数の第1の直線とは直交する相互に平行な複数の第2の直線と、の複数の交点に位置し、前記第1及び第2の直線のいずれに沿った列においても隣同士の間隔が均一になるように配列されていてもよい。
図1は、本発明の第1の実施の形態に係る半導体装置を示す図である。図2は、図1に示す半導体装置のII−II線断面図である。図3は、図1に示す半導体装置のIII−III線断面図である。
図4は、本発明の第2の実施の形態に係る半導体装置を示す図である。図5は、図4に示す半導体装置のV−V線断面図である。本実施の形態では、第2の貫通穴128は、金属層122の外周縁全体を、第2の樹脂層124から露出させるように形成されている。つまり、第2の貫通穴128は、リング状に形成されている。その他の構成及び製造方法は、上記実施の形態で説明した内容を適用することができる。本実施の形態でも、第2の貫通穴128を通して金属層122から放熱することができる。
図6は、本発明の第3の実施の形態に係る半導体装置を示す図である。図7は、図6に示す半導体装置のVII−VII線断面図である。本実施の形態では、第2の貫通穴228は、金属層222の外周縁よりも内側の領域のみを、第2の樹脂層224から露出させるように形成されている。すなわち、金属層222の周縁部は全て、第2の樹脂層224で覆われている。また、第2の樹脂層224をソルダレジストとして使用するため、金属端子34の周囲にも第2の樹脂層224が配置されている。その他の構成及び製造方法は、上記実施の形態で説明した内容を適用することができる。本実施の形態でも、第2の貫通穴228を通して金属層222から放熱することができる。
Claims (6)
- 集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、を有し、
前記第2の貫通穴は、前記金属層の端部及び前記金属層の端部に隣接する前記第1の樹脂層の一部を、前記第2の樹脂層から露出させるように形成されてなる半導体装置。 - 集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、を有し、
前記第2の貫通穴は、前記金属層の外周縁全体を、前記第2の樹脂層から露出させるように形成されてなる半導体装置。 - 集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、を有し、
前記金属層の前記第1の樹脂層と平行な面は多角形をなし、
前記第2の貫通穴は、前記金属層の角部を、前記第2の樹脂層から露出させるように形成されてなる半導体装置。 - 集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、を有し、
前記第2の樹脂層は前記金属層の外周縁全体を覆っている半導体装置。 - 集積回路が形成され、前記集積回路に電気的に接続された電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された第1の樹脂層と、
前記電極に電気的に接続され、前記第1の樹脂層上に形成された配線と、
前記第1の樹脂層上に形成された金属層と、
前記配線とオーバーラップする第1の貫通穴と、前記金属層の一部を露出させる第2の貫通穴と、が形成された第2の樹脂層と、
前記第1の貫通穴内で前記配線上に設けられた外部端子と、を有し、
前記第2の樹脂層は、前記金属層とオーバーラップする第3の貫通穴をさらに有し、
前記第3の貫通穴内で前記金属層上に設けられた金属端子をさらに有する半導体装置。 - 請求項5に記載された半導体装置において、
前記第2の樹脂層には複数の前記第3の貫通穴が形成され、
前記金属端子が、前記複数の第3の貫通穴の各々に少なくとも一つ設けられることで、前記金属端子は複数設けられ、
前記複数の金属端子は、平行な複数の第1の直線と、前記複数の第1の直線とは直交する相互に平行な複数の第2の直線と、の複数の交点に位置し、前記第1及び第2の直線のいずれに沿った列においても隣同士の間隔が均一になるように配列されてなる半導体装置。
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JP2007010572A JP4431901B2 (ja) | 2007-01-19 | 2007-01-19 | 半導体装置 |
US12/015,729 US20080174026A1 (en) | 2007-01-19 | 2008-01-17 | Semiconductor device |
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JP2007010572A JP4431901B2 (ja) | 2007-01-19 | 2007-01-19 | 半導体装置 |
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US5573632A (en) * | 1989-02-23 | 1996-11-12 | Fuji Xerox Co., Ltd. | Multilayer printed-circuit substrate, wiring substrate and process of producing the same |
CN1146984C (zh) * | 1996-10-30 | 2004-04-21 | 日立化成工业株式会社 | 半导体封装用芯片支持基片、半导体装置及其制造方法 |
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