JP4414358B2 - 前面発光構造を有する有機電界発光表示装置及びこれの製造方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
- A62B1/00—Devices for lowering persons from buildings or the like
- A62B1/06—Devices for lowering persons from buildings or the like by making use of rope-lowering devices
- A62B1/08—Devices for lowering persons from buildings or the like by making use of rope-lowering devices with brake mechanisms for the winches or pulleys
- A62B1/10—Devices for lowering persons from buildings or the like by making use of rope-lowering devices with brake mechanisms for the winches or pulleys mechanically operated
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
- A62B1/00—Devices for lowering persons from buildings or the like
- A62B1/06—Devices for lowering persons from buildings or the like by making use of rope-lowering devices
- A62B1/18—Other single parts for rope lowering-devices, e.g. take-up rollers for ropes, devices for shooting ropes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- Mechanical Engineering (AREA)
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- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本発明による前面発光有機電界発光表示装置を製作するために、所定の半導体工程を経て半導体層、ゲート電極及びソース/ドレイン電極を含む薄膜トランジスタを形成した後に、前記ソース/ドレイン電極上部に二層構造のパシベーション層を形成した。具体的には、基板全面にかけて窒化シリコンで無機絶縁膜を形成した後に、所定領域をエッチングして第1コンタクトホールを形成し、その上部に有機絶縁物質であるBCB(Benzocyclobutene)を積層して有機平坦化層を形成した後に、所定領域をエッチングして前記第1コンタクトホールと連結される第2コンタクトホールを形成し、前記ドレイン電極を外部に露出させた。この時、前記ソース/ドレイン電極はモリブデン及びタングステンをスパッタリングして形成した。
前記反射物質膜の形成後パターニングを遂行しないで、その上部に透明導電膜を形成した後、前記透明導電膜及び前記反射物質膜を同時にパターニングして反射膜及び第1電極を形成したことを除いては前記製造例と同様に遂行して前面発光有機電界発光素子を製作した。すなわち、前記第1電極は反射膜を介してドレイン電極と接続するように形成された。
前記製造例及び比較例で得られた前面発光有機電界発光表示装置のコンタクト抵抗を測定して、表面状態を顕微鏡を用いて観察した。このような結果を図9ないし図12に示した。
11、51a、51b バッファー層
12、52a、52b 半導体層
13−1、13−2、53−1a、53−2a、53−1b、53−2b ソース/ドレイン領域
14、54a、54b ゲート絶縁膜
15、55a、55b ゲート電極
Claims (13)
- 基板上に位置して、半導体層、ゲート電極及びソース/ドレイン電極を有する薄膜トランジスタ;及び
前記ソース/ドレイン電極のうち一つとコンタクトする電極パッド、前記電極パッド上に位置して前記電極パッドとコンタクトする第1電極、前記電極パッドと前記第1電極間に介在した反射膜、前記第1電極上に位置する少なくとも発光層を有する有機機能膜及び前記有機機能膜上に位置する第2電極を具備する有機電界発光ダイオードを含み、
前記電極パッドは前記反射膜の下部で接触していることを特徴とする有機電界発光表示装置。 - 前記第1電極は前記ソース/ドレイン電極とコンタクトホールを介して電気的に連結されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記ソース/ドレイン電極はモリブデン(Mo)膜またはモリブデン−タングステン合金(MoW)膜であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記反射膜はアルミニウム(Al)膜またはアルミニウム−ネオジム(Al−Nd)膜であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記反射膜の厚さは100ないし2000Åであることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1電極は透明導電膜であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記透明導電膜はITO(Indium Tin Oxide)膜またはIZO(Indium Zinc Oxide)膜であることを特徴とする請求項6に記載の有機電界発光表示装置。
- 前記第1電極の厚さは50ないし700Åであることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記有機機能膜は正孔注入層、正孔輸送層、正孔抑制層、電子輸送層及び電子注入層で構成された群から選択された1種以上の層をさらに含むことを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第2電極はITO、IZO、Mg、Ca、Al、Ag、Ba及びこれらの合金で構成された群から選択される一つの物質からなることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1電極または第2電極はアノード電極であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 基板上に半導体層、ゲート電極及びソース/ドレイン電極を具備した薄膜トランジスタを形成し、
前記ソース/ドレイン電極のうちの一つと接続する電極パッドを形成し、
前記電極パッド上に反射物質膜を形成した後、これをパターニングして反射膜を形成し、
前記反射膜上に第1電極を形成して、前記反射膜が前記電極パッドと前記第1電極との間に介在するように、かつ前記電極パッドが前記反射膜の下部で接触するようにし、
前記第1電極上に少なくとも発光層を具備する有機機能膜を形成し、
前記有機機能膜上に第2電極を形成することを含み、
前記第1電極は前記電極パッドに直接コンタクトして前記ソース/ドレイン電極と電気的に接続することを特徴とする有機電界発光表示装置の製造方法。 - 前記反射膜を形成することは基板上に反射物質膜を形成して、前記反射物質膜を乾式エッチング法を用いてパターニングすることを含むことを特徴とする請求項12に記載の有機電界発光表示装置の製造方法。
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KR1020040016608A KR100579192B1 (ko) | 2004-03-11 | 2004-03-11 | 전면 발광 구조를 갖는 유기 전계 발광 표시 장치 및 이의제조방법 |
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JP2005259695A JP2005259695A (ja) | 2005-09-22 |
JP4414358B2 true JP4414358B2 (ja) | 2010-02-10 |
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US (1) | US7741640B2 (ja) |
JP (1) | JP4414358B2 (ja) |
KR (1) | KR100579192B1 (ja) |
CN (2) | CN101667589B (ja) |
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