JP4410312B2 - 増粘エッチング塗布液を用いた太陽電池用太陽光発電素子基板の選択エッチング方法 - Google Patents
増粘エッチング塗布液を用いた太陽電池用太陽光発電素子基板の選択エッチング方法 Download PDFInfo
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- JP4410312B2 JP4410312B2 JP2009519731A JP2009519731A JP4410312B2 JP 4410312 B2 JP4410312 B2 JP 4410312B2 JP 2009519731 A JP2009519731 A JP 2009519731A JP 2009519731 A JP2009519731 A JP 2009519731A JP 4410312 B2 JP4410312 B2 JP 4410312B2
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- 238000005530 etching Methods 0.000 title claims description 154
- 239000000758 substrate Substances 0.000 title claims description 139
- 238000000576 coating method Methods 0.000 title claims description 94
- 239000011248 coating agent Substances 0.000 title claims description 93
- 230000008719 thickening Effects 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 27
- 238000010248 power generation Methods 0.000 claims description 68
- 239000007788 liquid Substances 0.000 claims description 60
- 239000000243 solution Substances 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 16
- 239000002344 surface layer Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 56
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 24
- 229910052698 phosphorus Inorganic materials 0.000 description 20
- 239000011574 phosphorus Substances 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000003795 chemical substances by application Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 238000010792 warming Methods 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 241000196324 Embryophyta Species 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 235000013312 flour Nutrition 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920002261 Corn starch Polymers 0.000 description 4
- 239000008120 corn starch Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 241000209140 Triticum Species 0.000 description 3
- 235000021307 Triticum Nutrition 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000002655 kraft paper Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- -1 and at the same time Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Description
特許文献1:特開2007−88402号公報
「(A) pn接合部Sを有する太陽光発電素子基板12からpn接合部Sに係る表面薄層18の一部を除去して母相17を露出させる太陽電池用太陽光発電素子基板12の選択エッチング方法であって、
(B) 太陽光発電素子基板12の裏面に形成される裏面電極形成領域Rの全周囲あるいは該基板12の側面I全周またはその両方に、植物由来の物質を水で練り、これを加熱して作られた水溶性糊剤をアルカリ水溶液のエッチング薬液に添加して前記エッチング薬液の粘度を増加させたことを特徴とする増粘エッチング塗布液ELを塗布し、
(C) 太陽光発電素子基板12を加温して増粘エッチング塗布液ELの塗着部分の太陽光発電素子基板12と増粘エッチング塗布液ELとを反応させて表面薄層18と裏面電極形成領域Rとを電気回路的に分離し、
(D) 太陽光発電素子基板12を純水で洗浄して塗着された増粘エッチング塗布液ELを除去する事を特徴とする、
(E) 太陽電池用太陽光発電素子基板のエッチング方法」、即ち、この工程は枚葉タクト搬送による連続処理が可能な太陽電池素子基板の選択エッチング方法である。
12…太陽光発電素子基板
14…裏面電極
15…表面電極
16…リード線(インターコネクター)
17…母層
Claims (2)
- (A)pn結合部を有する太陽光発電素子基板からpn接合部に係る表面薄層の一部を除去して母相を露出させる太陽電池用太陽光発電素子基板の選択エッチング方法であって、
(B)前記太陽電池用太陽光発電素子基板の裏面に形成される裏面電極形成領域の全周囲あるいは該基板の側面全周またはその両方に、植物由来の物質を水で練り、これを加熱して作られた水溶性糊剤をアルカリ水溶液のエッチング薬液に添加して前記エッチング薬液の粘度を増加させたことを特徴とする増粘エッチング塗布液を塗布し、
(C)前記太陽光発電素子基板を加温して前記増粘エッチング塗布液の塗着部分の前記太陽光発電素子基板と前記増粘エッチング塗布液とを反応させて表面薄層と裏面電極形成領域とを電気回路的に分離し、
(D)前記太陽光発電素子基板を純水で洗浄して塗着された増粘エッチング塗布液を除去する事を特徴とする、
(E)太陽電池用太陽光発電素子基板の選択エッチング方法。 - 前記太陽光発電素子基板の裏面を下向きに保持して、該基板の裏面電極形成領域の全周囲に塗着された増粘エッチング塗布液の塗着部分における前記太陽光発電素子基板と前記増粘エッチング塗布液とを反応させることを特徴とする請求項1に記載の太陽電池用太陽光発電素子基板の選択エッチング方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/074478 WO2009081453A1 (ja) | 2007-12-20 | 2007-12-20 | 増粘エッチング塗布液およびそれを用いた太陽電池用太陽光発電素子基板の選択エッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4410312B2 true JP4410312B2 (ja) | 2010-02-03 |
JPWO2009081453A1 JPWO2009081453A1 (ja) | 2011-05-06 |
Family
ID=40800772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009519731A Expired - Fee Related JP4410312B2 (ja) | 2007-12-20 | 2007-12-20 | 増粘エッチング塗布液を用いた太陽電池用太陽光発電素子基板の選択エッチング方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100255626A1 (ja) |
EP (1) | EP2224471A4 (ja) |
JP (1) | JP4410312B2 (ja) |
KR (1) | KR20100093024A (ja) |
WO (1) | WO2009081453A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120112321A1 (en) * | 2010-11-04 | 2012-05-10 | Solarworld Industries America, Inc. | Alkaline etching liquid for texturing a silicon wafer surface |
JP5725734B2 (ja) | 2010-06-01 | 2015-05-27 | キヤノン株式会社 | ガラスの製造方法 |
JP5721348B2 (ja) * | 2010-06-01 | 2015-05-20 | キヤノン株式会社 | ガラスの製造方法 |
US8445309B2 (en) | 2010-08-20 | 2013-05-21 | First Solar, Inc. | Anti-reflective photovoltaic module |
JP5802407B2 (ja) * | 2011-03-04 | 2015-10-28 | 三菱瓦斯化学株式会社 | 基板処理装置および基板処理方法 |
JP7513454B2 (ja) | 2020-07-27 | 2024-07-09 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5785976A (en) * | 1980-11-18 | 1982-05-28 | Ricoh Co Ltd | Etching device |
US5271766A (en) * | 1991-01-11 | 1993-12-21 | Adm Agri-Industries, Ltd. | Starch-based adhesive coating |
US5618341A (en) * | 1992-08-11 | 1997-04-08 | E. Khashoggi Industries | Methods for uniformly dispersing fibers within starch-based compositions |
JPH06277015A (ja) * | 1993-03-22 | 1994-10-04 | Toshihiko Kita | 澱粉に因る粘性を持った飲料 |
US6245440B1 (en) * | 1996-04-05 | 2001-06-12 | University Of Virginia | Continuous metal fiber brushes |
US5827577A (en) * | 1996-11-22 | 1998-10-27 | Engelhard Corporation | Method and apparatus for applying catalytic and/or adsorbent coatings on a substrate |
US20020009622A1 (en) * | 1999-08-03 | 2002-01-24 | Goodson David M. | Sprayable phosphate cementitious coatings and a method and apparatus for the production thereof |
IL152497A0 (en) * | 2000-04-28 | 2003-05-29 | Merck Patent Gmbh | Etching pastes for inorganic surfaces |
JP2001319908A (ja) * | 2000-05-01 | 2001-11-16 | Sony Corp | 被処理物のウエット処理方法及びその装置 |
DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
DE10313127B4 (de) * | 2003-03-24 | 2006-10-12 | Rena Sondermaschinen Gmbh | Verfahren zur Behandlung von Substratoberflächen |
JP4869654B2 (ja) * | 2005-08-04 | 2012-02-08 | 三菱電機株式会社 | 太陽電池の製造方法 |
JP5201789B2 (ja) * | 2005-11-14 | 2013-06-05 | シャープ株式会社 | 太陽電池およびその製造方法 |
-
2007
- 2007-12-20 KR KR1020107002152A patent/KR20100093024A/ko not_active Application Discontinuation
- 2007-12-20 EP EP07859875A patent/EP2224471A4/en not_active Withdrawn
- 2007-12-20 JP JP2009519731A patent/JP4410312B2/ja not_active Expired - Fee Related
- 2007-12-20 WO PCT/JP2007/074478 patent/WO2009081453A1/ja active Application Filing
- 2007-12-20 US US12/743,532 patent/US20100255626A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2224471A4 (en) | 2013-01-09 |
KR20100093024A (ko) | 2010-08-24 |
EP2224471A1 (en) | 2010-09-01 |
JPWO2009081453A1 (ja) | 2011-05-06 |
WO2009081453A1 (ja) | 2009-07-02 |
US20100255626A1 (en) | 2010-10-07 |
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