JP4409380B2 - 電子回路装置 - Google Patents

電子回路装置 Download PDF

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Publication number
JP4409380B2
JP4409380B2 JP2004214093A JP2004214093A JP4409380B2 JP 4409380 B2 JP4409380 B2 JP 4409380B2 JP 2004214093 A JP2004214093 A JP 2004214093A JP 2004214093 A JP2004214093 A JP 2004214093A JP 4409380 B2 JP4409380 B2 JP 4409380B2
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Japan
Prior art keywords
bus bar
electronic circuit
circuit device
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plus
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Expired - Fee Related
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JP2004214093A
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English (en)
Japanese (ja)
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JP2006040926A (ja
JP2006040926A5 (enExample
Inventor
圭輔 漆原
敦史 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
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Honda Motor Co Ltd
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Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Priority to JP2004214093A priority Critical patent/JP4409380B2/ja
Publication of JP2006040926A publication Critical patent/JP2006040926A/ja
Publication of JP2006040926A5 publication Critical patent/JP2006040926A5/ja
Application granted granted Critical
Publication of JP4409380B2 publication Critical patent/JP4409380B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
JP2004214093A 2004-07-22 2004-07-22 電子回路装置 Expired - Fee Related JP4409380B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004214093A JP4409380B2 (ja) 2004-07-22 2004-07-22 電子回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004214093A JP4409380B2 (ja) 2004-07-22 2004-07-22 電子回路装置

Publications (3)

Publication Number Publication Date
JP2006040926A JP2006040926A (ja) 2006-02-09
JP2006040926A5 JP2006040926A5 (enExample) 2006-11-30
JP4409380B2 true JP4409380B2 (ja) 2010-02-03

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ID=35905651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004214093A Expired - Fee Related JP4409380B2 (ja) 2004-07-22 2004-07-22 電子回路装置

Country Status (1)

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JP (1) JP4409380B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5231880B2 (ja) * 2008-07-01 2013-07-10 株式会社東芝 電力半導体モジュールおよびこれを備えた半導体電力変換装置
JP5407198B2 (ja) * 2008-07-02 2014-02-05 富士電機株式会社 電力変換装置のパワーモジュール
JP5303251B2 (ja) * 2008-12-08 2013-10-02 株式会社小糸製作所 給電部材および車両用灯具
JP5287359B2 (ja) * 2009-03-04 2013-09-11 株式会社デンソー 半導体モジュール
JP5581724B2 (ja) * 2010-02-22 2014-09-03 ダイキン工業株式会社 電力変換装置
JP5525917B2 (ja) 2010-05-27 2014-06-18 ローム株式会社 電子回路
DE102012202765B3 (de) * 2012-02-23 2013-04-18 Semikron Elektronik Gmbh & Co. Kg Halbleitermodul
JP5776588B2 (ja) * 2012-02-27 2015-09-09 株式会社豊田自動織機 半導体装置
JP5895826B2 (ja) * 2012-11-26 2016-03-30 トヨタ自動車株式会社 半導体モジュール
JP5865422B2 (ja) * 2014-04-14 2016-02-17 ローム株式会社 電子回路
JP6500563B2 (ja) * 2015-03-31 2019-04-17 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
CN106463501B (zh) * 2015-04-28 2019-08-30 新电元工业株式会社 半导体模块
US9681568B1 (en) * 2015-12-02 2017-06-13 Ge Energy Power Conversion Technology Ltd Compact stacked power modules for minimizing commutating inductance and methods for making the same
JP6545117B2 (ja) * 2016-03-25 2019-07-17 東芝三菱電機産業システム株式会社 電力変換装置
JP6604926B2 (ja) * 2016-09-27 2019-11-13 三菱電機株式会社 半導体モジュール
JP2018064362A (ja) * 2016-10-12 2018-04-19 学校法人早稲田大学 半導体装置
DE102017203420A1 (de) * 2017-03-02 2018-09-06 Siemens Aktiengesellschaft Halbbrücke für leistungselektronische Schaltungen
CN107195623B (zh) * 2017-06-14 2023-10-27 扬州国扬电子有限公司 一种双面散热高可靠功率模块
DE102017219674A1 (de) * 2017-11-06 2019-05-09 Audi Ag Halbleiter-Leistungsmodul mit integriertem Kondensator
JP6701240B2 (ja) * 2018-02-09 2020-05-27 本田技研工業株式会社 素子ユニット
EP3547367A1 (en) * 2018-03-30 2019-10-02 Mitsubishi Electric R&D Centre Europe B.V. Power module incorporating pre-packed power cells
JP7290420B2 (ja) * 2019-01-22 2023-06-13 株式会社日立製作所 パワー半導体装置
JP7582301B2 (ja) * 2020-03-31 2024-11-13 住友電気工業株式会社 半導体装置
WO2023171768A1 (ja) * 2022-03-11 2023-09-14 ニデック株式会社 半導体モジュール、電力変換装置、および半導体モジュールの製造方法

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Publication number Publication date
JP2006040926A (ja) 2006-02-09

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