JP4407331B2 - 半導体熱処理装置 - Google Patents
半導体熱処理装置 Download PDFInfo
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- JP4407331B2 JP4407331B2 JP2004082947A JP2004082947A JP4407331B2 JP 4407331 B2 JP4407331 B2 JP 4407331B2 JP 2004082947 A JP2004082947 A JP 2004082947A JP 2004082947 A JP2004082947 A JP 2004082947A JP 4407331 B2 JP4407331 B2 JP 4407331B2
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- outer tube
- support member
- heat treatment
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- semiconductor heat
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- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000010438 heat treatment Methods 0.000 title claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 16
- 238000007789 sealing Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
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- LSMIOFMZNVEEBR-ICLSSMQGSA-N scilliroside Chemical compound C=1([C@@H]2[C@@]3(C)CC[C@H]4[C@@]([C@]3(CC2)O)(O)C[C@H](C2=C[C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)CC[C@@]24C)OC(=O)C)C=CC(=O)OC=1 LSMIOFMZNVEEBR-ICLSSMQGSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Description
内径270(mm)、厚さ2.5(mm)、高さ1200(mm)の不純物としてFe5質量ppmを含む炭化ケイ素からなる内管71と、内径307(mm)、厚さ4.5(mm)、高さ1400(mm)、フランジ内径307(mm)、フランジ外径400(mm)、フランジ厚さ10(mm)の不純物としてFe5質量ppmを含む炭化ケイ素からなる外管72とを備えた図1の構成の低圧CVD装置を使用した。
例1の低圧CVD装置において、図3(a)に示すように支持部材92として3mm厚さのAlと1mm厚さのPTFEを高さ方向に積層したものを使用した以外は例1と同様にした。これを用いて、例1と同様のCVD膜の形成作業を40回繰り返したが、外管72、Oリング68にクラック等の異常は観察されなかった。また、シール性も充分あり二重管73の内部の真空度も一定の範囲内であった。さらに、この低圧CVD装置を用いて、例1より温度の高い750℃にて窒化ケイ素CVD膜の形成作業を40回繰り返したが、同様に問題はなかった。なお、支持部材92の弾性率は1.9GPa、有効熱伝達係数は222W/(m2・K)であった。
例1の低圧CVD装置において、支持部材92を介装しないでOリング68だけとした以外は例1と同様にした。これを用いて、例1と同様のCVD膜の形成作業を2回繰り返したところで外管72の下部72aの部分にクラックが形成されているのを確認したので作業を中止し、装置を分解して観察したところOリング68の一部に焼けが認められた。
60:本装置(低圧CVD装置)
61:金属缶体
62:断熱材
63:炉壁
64:ヒータ
65:基台
66:蓋体
67:ガスの導入排出口
68:シール部材(Oリング)
71:インナーチューブ(内管)
72:アウターチューブ(外管)
72a:周壁
72b:上壁
72c:フランジ部
73:二重管
92:支持部材
H :外管の下端からヒータ64の最下端までの距離
W :半導体ウエハ
Claims (4)
- 上部が閉塞され、下部が開口され、下部外周にフランジ部が設けられた炭化ケイ素質のアウターチューブと、前記アウターチューブを下部で支持し、前記アウターチューブの下面との間を気密シールしてなる基台と、この基台の中央部に設けた開口に対して開閉可能に設けられた蓋体と、前記アウターチューブの外周面および上面を囲み、内側にヒータを設けた炉壁とをそなえた半導体熱処理装置であって、前記アウターチューブと前記基台との間に環状のシール部材と環状の支持部材とを前記シール部材の外周に前記支持部材が配置されるように介装し、かつ前記支持部材の有効熱伝達係数が50〜2000W/(m2・K)であることを特徴とする半導体熱処理装置。
- 前記支持部材が複数の部材を高さ方向および/または周方向に積層したものである請求項1記載の半導体熱処理装置。
- 前記支持部材がフッ素樹脂および/またはアルミニウムである請求項1または2記載の半導体熱処理装置。
- 前記アウターチューブの内周に所定の間隙を介して配置され、上下が開口された炭化ケイ素質のインナーチューブを含む請求項1、2または3記載の半導体熱処理装置。
Priority Applications (1)
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JP2004082947A JP4407331B2 (ja) | 2003-03-28 | 2004-03-22 | 半導体熱処理装置 |
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JP2003090050 | 2003-03-28 | ||
JP2004082947A JP4407331B2 (ja) | 2003-03-28 | 2004-03-22 | 半導体熱処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2004319979A JP2004319979A (ja) | 2004-11-11 |
JP4407331B2 true JP4407331B2 (ja) | 2010-02-03 |
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JP2004082947A Expired - Lifetime JP4407331B2 (ja) | 2003-03-28 | 2004-03-22 | 半導体熱処理装置 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245492A (ja) * | 2005-03-07 | 2006-09-14 | Gasonics:Kk | 基板熱処理装置および基板熱処理製造方法 |
US8246749B2 (en) | 2005-07-26 | 2012-08-21 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus and semiconductor device producing method |
JP6208588B2 (ja) * | 2014-01-28 | 2017-10-04 | 東京エレクトロン株式会社 | 支持機構及び基板処理装置 |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
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2004
- 2004-03-22 JP JP2004082947A patent/JP4407331B2/ja not_active Expired - Lifetime
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