JP4406311B2 - エネルギー線照射装置およびそれを用いたパタン作成方法 - Google Patents

エネルギー線照射装置およびそれを用いたパタン作成方法 Download PDF

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JP4406311B2
JP4406311B2 JP2004103051A JP2004103051A JP4406311B2 JP 4406311 B2 JP4406311 B2 JP 4406311B2 JP 2004103051 A JP2004103051 A JP 2004103051A JP 2004103051 A JP2004103051 A JP 2004103051A JP 4406311 B2 JP4406311 B2 JP 4406311B2
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energy beam
energy
chamber
differential exhaust
irradiated
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JP2005294310A (ja
JP2005294310A5 (https=
Inventor
徹 佐竹
伸治 野路
健二 寺尾
敬一 遠山
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Ebara Corp
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Ebara Corp
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JP2004103051A 2004-03-31 2004-03-31 エネルギー線照射装置およびそれを用いたパタン作成方法 Expired - Lifetime JP4406311B2 (ja)

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JP2004103051A JP4406311B2 (ja) 2004-03-31 2004-03-31 エネルギー線照射装置およびそれを用いたパタン作成方法

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JP2004103051A JP4406311B2 (ja) 2004-03-31 2004-03-31 エネルギー線照射装置およびそれを用いたパタン作成方法

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JP2005294310A JP2005294310A (ja) 2005-10-20
JP2005294310A5 JP2005294310A5 (https=) 2007-04-19
JP4406311B2 true JP4406311B2 (ja) 2010-01-27

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082050B2 (ja) * 2006-09-28 2012-11-28 株式会社日立製作所 電子線照射装置
WO2012062932A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN107359101B (zh) * 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却

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