JP4406280B2 - シリコン精錬におけるNa除去方法 - Google Patents
シリコン精錬におけるNa除去方法 Download PDFInfo
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- JP4406280B2 JP4406280B2 JP2003429263A JP2003429263A JP4406280B2 JP 4406280 B2 JP4406280 B2 JP 4406280B2 JP 2003429263 A JP2003429263 A JP 2003429263A JP 2003429263 A JP2003429263 A JP 2003429263A JP 4406280 B2 JP4406280 B2 JP 4406280B2
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- silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Description
(1) Naを含有するスラグを用いたシリコンの精錬後、スラグのみを除去し、(1)式で算出される時間以上シリコンを溶融状態で保持し、且つ、雰囲気に露出する部分のシリコンの表面積が全表面積の少なくとも3分の1以上であることを特徴とするシリコン精錬におけるNa除去方法、
(2) 前記溶融状態での保持中に、不活性ガスをシリコン表面に吹き付ける又はバブリングする(1)に記載のシリコン精錬におけるNa除去方法、
(3) 前記溶融状態での保持中に、雰囲気を1.33×103Pa以下の減圧にする(1)に記載のシリコン精錬におけるNa除去方法、である。
2 不純物(ボロンや燐等)、
3 スラグ、
4 Na、
5 シリコンの表面、
6 全表面。
Claims (3)
- 前記溶融状態での保持中に、不活性ガスをシリコン表面に吹き付ける又はバブリングする請求項1に記載のシリコン精錬におけるNa除去方法。
- 前記溶融状態での保持中に、雰囲気を1.33×103Pa以下の減圧にする請求項1に記載のシリコン精錬におけるNa除去方法。
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JP2003429263A JP4406280B2 (ja) | 2003-12-25 | 2003-12-25 | シリコン精錬におけるNa除去方法 |
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JP2003429263A JP4406280B2 (ja) | 2003-12-25 | 2003-12-25 | シリコン精錬におけるNa除去方法 |
Publications (2)
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JP2005187248A JP2005187248A (ja) | 2005-07-14 |
JP4406280B2 true JP4406280B2 (ja) | 2010-01-27 |
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JP2003429263A Expired - Fee Related JP4406280B2 (ja) | 2003-12-25 | 2003-12-25 | シリコン精錬におけるNa除去方法 |
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Families Citing this family (1)
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CN104220370B (zh) * | 2012-02-03 | 2016-10-19 | 菲罗索拉硅太阳能公司 | 硅精炼设备和用于精炼硅的方法 |
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2003
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