JP4403665B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4403665B2
JP4403665B2 JP2001072414A JP2001072414A JP4403665B2 JP 4403665 B2 JP4403665 B2 JP 4403665B2 JP 2001072414 A JP2001072414 A JP 2001072414A JP 2001072414 A JP2001072414 A JP 2001072414A JP 4403665 B2 JP4403665 B2 JP 4403665B2
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JP
Japan
Prior art keywords
semiconductor element
bottom electrode
semiconductor device
metal block
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001072414A
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English (en)
Japanese (ja)
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JP2002270736A (ja
JP2002270736A5 (https=
Inventor
享 木村
光平 村上
純司 藤野
建一 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001072414A priority Critical patent/JP4403665B2/ja
Publication of JP2002270736A publication Critical patent/JP2002270736A/ja
Publication of JP2002270736A5 publication Critical patent/JP2002270736A5/ja
Application granted granted Critical
Publication of JP4403665B2 publication Critical patent/JP4403665B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2001072414A 2001-03-14 2001-03-14 半導体装置 Expired - Lifetime JP4403665B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001072414A JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001072414A JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009018542A Division JP4864990B2 (ja) 2009-01-29 2009-01-29 半導体装置
JP2009104090A Division JP2009164647A (ja) 2009-04-22 2009-04-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2002270736A JP2002270736A (ja) 2002-09-20
JP2002270736A5 JP2002270736A5 (https=) 2006-11-30
JP4403665B2 true JP4403665B2 (ja) 2010-01-27

Family

ID=18930001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001072414A Expired - Lifetime JP4403665B2 (ja) 2001-03-14 2001-03-14 半導体装置

Country Status (1)

Country Link
JP (1) JP4403665B2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847311B2 (en) 2014-11-04 2017-12-19 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method for the semiconductor device
US10103090B2 (en) 2014-03-10 2018-10-16 Toyota Jidosha Kabushiki Kaisha Semiconductor device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3740116B2 (ja) 2002-11-11 2006-02-01 三菱電機株式会社 モールド樹脂封止型パワー半導体装置及びその製造方法
JP2004349347A (ja) 2003-05-20 2004-12-09 Rohm Co Ltd 半導体装置
JP4015975B2 (ja) 2003-08-27 2007-11-28 三菱電機株式会社 半導体装置
JP2006114716A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 電力用半導体装置
JP4784150B2 (ja) * 2004-11-10 2011-10-05 富士電機株式会社 半導体装置および、半導体装置の製造方法
JP5415823B2 (ja) * 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
JP5947537B2 (ja) 2011-04-19 2016-07-06 トヨタ自動車株式会社 半導体装置及びその製造方法
CN102522340A (zh) * 2011-12-21 2012-06-27 杭州士兰集成电路有限公司 一种大功率模块的散热片安装方法
JP2013171891A (ja) * 2012-02-17 2013-09-02 Toshiba Corp 半導体装置、半導体モジュール、及び半導体モジュールの製造方法
WO2013133134A1 (ja) 2012-03-07 2013-09-12 トヨタ自動車株式会社 半導体装置及びその製造方法
WO2015046040A1 (ja) * 2013-09-27 2015-04-02 三菱電機株式会社 かしめヒートシンクおよびヒートシンク一体型パワーモジュール
JP5892184B2 (ja) 2014-03-18 2016-03-23 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6351731B2 (ja) * 2014-08-25 2018-07-04 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
JP2017103434A (ja) 2015-12-04 2017-06-08 トヨタ自動車株式会社 半導体装置
DE102015122259B4 (de) 2015-12-18 2020-12-24 Infineon Technologies Austria Ag Halbleitervorrichtungen mit einer porösen Isolationsschicht
US10714418B2 (en) * 2018-03-26 2020-07-14 Texas Instruments Incorporated Electronic device having inverted lead pins
JP7501453B2 (ja) * 2021-06-11 2024-06-18 株式会社村田製作所 回路モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103090B2 (en) 2014-03-10 2018-10-16 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US9847311B2 (en) 2014-11-04 2017-12-19 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method for the semiconductor device

Also Published As

Publication number Publication date
JP2002270736A (ja) 2002-09-20

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