JP4398541B2 - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ Download PDF

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Publication number
JP4398541B2
JP4398541B2 JP18705199A JP18705199A JP4398541B2 JP 4398541 B2 JP4398541 B2 JP 4398541B2 JP 18705199 A JP18705199 A JP 18705199A JP 18705199 A JP18705199 A JP 18705199A JP 4398541 B2 JP4398541 B2 JP 4398541B2
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JP
Japan
Prior art keywords
signal line
control signal
wiring layer
mos transistor
well region
Prior art date
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Expired - Fee Related
Application number
JP18705199A
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English (en)
Japanese (ja)
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JP2001015718A5 (enExample
JP2001015718A (ja
Inventor
芳徳 高野
徹 丹沢
忠行 田浦
武史 宮葉
滋 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP18705199A priority Critical patent/JP4398541B2/ja
Publication of JP2001015718A publication Critical patent/JP2001015718A/ja
Publication of JP2001015718A5 publication Critical patent/JP2001015718A5/ja
Application granted granted Critical
Publication of JP4398541B2 publication Critical patent/JP4398541B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Non-Volatile Memory (AREA)
JP18705199A 1999-06-30 1999-06-30 不揮発性半導体メモリ Expired - Fee Related JP4398541B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18705199A JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18705199A JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Publications (3)

Publication Number Publication Date
JP2001015718A JP2001015718A (ja) 2001-01-19
JP2001015718A5 JP2001015718A5 (enExample) 2005-10-06
JP4398541B2 true JP4398541B2 (ja) 2010-01-13

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ID=16199325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18705199A Expired - Fee Related JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Country Status (1)

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JP (1) JP4398541B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024598A (ja) 2004-07-06 2006-01-26 Fujitsu Ltd 半導体装置の製造方法
JP4857682B2 (ja) * 2005-09-16 2012-01-18 セイコーエプソン株式会社 半導体集積回路装置及び電子機器
JP7091130B2 (ja) 2018-05-08 2022-06-27 キオクシア株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP2001015718A (ja) 2001-01-19

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