JP2001015718A5 - - Google Patents

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Publication number
JP2001015718A5
JP2001015718A5 JP1999187051A JP18705199A JP2001015718A5 JP 2001015718 A5 JP2001015718 A5 JP 2001015718A5 JP 1999187051 A JP1999187051 A JP 1999187051A JP 18705199 A JP18705199 A JP 18705199A JP 2001015718 A5 JP2001015718 A5 JP 2001015718A5
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JP
Japan
Prior art keywords
control signal
signal line
mos transistor
semiconductor memory
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999187051A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015718A (ja
JP4398541B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18705199A priority Critical patent/JP4398541B2/ja
Priority claimed from JP18705199A external-priority patent/JP4398541B2/ja
Publication of JP2001015718A publication Critical patent/JP2001015718A/ja
Publication of JP2001015718A5 publication Critical patent/JP2001015718A5/ja
Application granted granted Critical
Publication of JP4398541B2 publication Critical patent/JP4398541B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP18705199A 1999-06-30 1999-06-30 不揮発性半導体メモリ Expired - Fee Related JP4398541B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18705199A JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18705199A JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Publications (3)

Publication Number Publication Date
JP2001015718A JP2001015718A (ja) 2001-01-19
JP2001015718A5 true JP2001015718A5 (enExample) 2005-10-06
JP4398541B2 JP4398541B2 (ja) 2010-01-13

Family

ID=16199325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18705199A Expired - Fee Related JP4398541B2 (ja) 1999-06-30 1999-06-30 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JP4398541B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024598A (ja) 2004-07-06 2006-01-26 Fujitsu Ltd 半導体装置の製造方法
JP4857682B2 (ja) * 2005-09-16 2012-01-18 セイコーエプソン株式会社 半導体集積回路装置及び電子機器
JP7091130B2 (ja) 2018-05-08 2022-06-27 キオクシア株式会社 半導体記憶装置

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