JP4391376B2 - フォトレジスト除去用シンナー組成物 - Google Patents

フォトレジスト除去用シンナー組成物 Download PDF

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Publication number
JP4391376B2
JP4391376B2 JP2004288845A JP2004288845A JP4391376B2 JP 4391376 B2 JP4391376 B2 JP 4391376B2 JP 2004288845 A JP2004288845 A JP 2004288845A JP 2004288845 A JP2004288845 A JP 2004288845A JP 4391376 B2 JP4391376 B2 JP 4391376B2
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JP
Japan
Prior art keywords
alkyl
mass
propylene glycol
photoresist
thinner composition
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JP2004288845A
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English (en)
Japanese (ja)
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JP2005115373A (ja
Inventor
尹錫壹
全雨植
朴熙珍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of JP2005115373A publication Critical patent/JP2005115373A/ja
Application granted granted Critical
Publication of JP4391376B2 publication Critical patent/JP4391376B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004288845A 2003-10-02 2004-09-30 フォトレジスト除去用シンナー組成物 Active JP4391376B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030068652A KR20050032719A (ko) 2003-10-02 2003-10-02 포토레지스트 제거용 씬너 조성물

Publications (2)

Publication Number Publication Date
JP2005115373A JP2005115373A (ja) 2005-04-28
JP4391376B2 true JP4391376B2 (ja) 2009-12-24

Family

ID=34545541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004288845A Active JP4391376B2 (ja) 2003-10-02 2004-09-30 フォトレジスト除去用シンナー組成物

Country Status (4)

Country Link
JP (1) JP4391376B2 (ko)
KR (1) KR20050032719A (ko)
CN (1) CN100545756C (ko)
TW (1) TW200519549A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4626978B2 (ja) * 2004-03-03 2011-02-09 ダイセル化学工業株式会社 リソグラフィー用洗浄剤及びリンス液
CN1987663B (zh) * 2005-12-23 2010-12-01 新应材股份有限公司 光阻清洗剂
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
KR101741839B1 (ko) 2010-10-15 2017-05-30 동우 화인켐 주식회사 감광성 수지 제거용 세정액 조성물
KR101886750B1 (ko) * 2011-09-22 2018-08-13 삼성전자 주식회사 Ｒｒｃ 공정용 씨너 조성물과 그의 공급 장치 및 ｅｂｒ 공정용 씨너 조성물
CN102709175B (zh) * 2012-05-23 2016-06-01 上海华虹宏力半导体制造有限公司 深沟槽工艺中光刻胶层的形成方法
CN106527066B (zh) * 2015-08-31 2021-04-30 安集微电子科技（上海）股份有限公司 一种光阻残留物清洗液

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248781B2 (ja) * 1993-06-28 2002-01-21 東京応化工業株式会社 レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法
JP3525309B2 (ja) * 1995-04-05 2004-05-10 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 洗浄液及び洗浄方法
KR100308422B1 (ko) * 1999-04-15 2001-09-26 주식회사 동진쎄미켐 스핀-온-글라스 및 감광성 수지 제거용 씬너 조성물
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
JP2001188359A (ja) * 1999-12-28 2001-07-10 Mitsubishi Gas Chem Co Inc エッジビードリムーバ
JP2003324052A (ja) * 2002-04-30 2003-11-14 Tokyo Electron Ltd 塗布膜除去方法および塗布膜形成除去装置

Also Published As

Publication number Publication date
CN100545756C (zh) 2009-09-30
JP2005115373A (ja) 2005-04-28
TW200519549A (en) 2005-06-16
CN1603962A (zh) 2005-04-06
KR20050032719A (ko) 2005-04-08

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