TW200519549A - Thinner composition for removing photosensitive resin - Google Patents

Thinner composition for removing photosensitive resin

Info

Publication number
TW200519549A
TW200519549A TW093129489A TW93129489A TW200519549A TW 200519549 A TW200519549 A TW 200519549A TW 093129489 A TW093129489 A TW 093129489A TW 93129489 A TW93129489 A TW 93129489A TW 200519549 A TW200519549 A TW 200519549A
Authority
TW
Taiwan
Prior art keywords
thinner composition
photosensitive resin
semiconductors
liquid crystal
crystal display
Prior art date
Application number
TW093129489A
Other languages
English (en)
Chinese (zh)
Inventor
Suk-Il Yoon
Woo-Sik Jun
Hee-Jin Park
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200519549A publication Critical patent/TW200519549A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093129489A 2003-10-02 2004-09-29 Thinner composition for removing photosensitive resin TW200519549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030068652A KR20050032719A (ko) 2003-10-02 2003-10-02 포토레지스트 제거용 씬너 조성물

Publications (1)

Publication Number Publication Date
TW200519549A true TW200519549A (en) 2005-06-16

Family

ID=34545541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129489A TW200519549A (en) 2003-10-02 2004-09-29 Thinner composition for removing photosensitive resin

Country Status (4)

Country Link
JP (1) JP4391376B2 (ko)
KR (1) KR20050032719A (ko)
CN (1) CN100545756C (ko)
TW (1) TW200519549A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4626978B2 (ja) * 2004-03-03 2011-02-09 ダイセル化学工業株式会社 リソグラフィー用洗浄剤及びリンス液
CN1987663B (zh) * 2005-12-23 2010-12-01 新应材股份有限公司 光阻清洗剂
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
KR101741839B1 (ko) 2010-10-15 2017-05-30 동우 화인켐 주식회사 감광성 수지 제거용 세정액 조성물
KR101886750B1 (ko) * 2011-09-22 2018-08-13 삼성전자 주식회사 Ｒｒｃ 공정용 씨너 조성물과 그의 공급 장치 및 ｅｂｒ 공정용 씨너 조성물
CN102709175B (zh) * 2012-05-23 2016-06-01 上海华虹宏力半导体制造有限公司 深沟槽工艺中光刻胶层的形成方法
CN106527066B (zh) * 2015-08-31 2021-04-30 安集微电子科技（上海）股份有限公司 一种光阻残留物清洗液

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248781B2 (ja) * 1993-06-28 2002-01-21 東京応化工業株式会社 レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法
JP3525309B2 (ja) * 1995-04-05 2004-05-10 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 洗浄液及び洗浄方法
KR100308422B1 (ko) * 1999-04-15 2001-09-26 주식회사 동진쎄미켐 스핀-온-글라스 및 감광성 수지 제거용 씬너 조성물
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
JP2001188359A (ja) * 1999-12-28 2001-07-10 Mitsubishi Gas Chem Co Inc エッジビードリムーバ
JP2003324052A (ja) * 2002-04-30 2003-11-14 Tokyo Electron Ltd 塗布膜除去方法および塗布膜形成除去装置

Also Published As

Publication number Publication date
JP4391376B2 (ja) 2009-12-24
CN100545756C (zh) 2009-09-30
JP2005115373A (ja) 2005-04-28
CN1603962A (zh) 2005-04-06
KR20050032719A (ko) 2005-04-08

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