JP4369264B2 - プラズマ成膜方法 - Google Patents

プラズマ成膜方法 Download PDF

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Publication number
JP4369264B2
JP4369264B2 JP2004076958A JP2004076958A JP4369264B2 JP 4369264 B2 JP4369264 B2 JP 4369264B2 JP 2004076958 A JP2004076958 A JP 2004076958A JP 2004076958 A JP2004076958 A JP 2004076958A JP 4369264 B2 JP4369264 B2 JP 4369264B2
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JP
Japan
Prior art keywords
gas
plasma
gas supply
film
planar antenna
Prior art date
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Expired - Fee Related
Application number
JP2004076958A
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English (en)
Japanese (ja)
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JP2004311975A5 (https=
JP2004311975A (ja
Inventor
保男 小林
剛平 川村
明 浅野
康浩 寺井
賢一 西澤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority to JP2004076958A priority Critical patent/JP4369264B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP2004/004070 priority patent/WO2004086483A1/ja
Priority to US10/549,859 priority patent/US20060251828A1/en
Priority to KR1020057017916A priority patent/KR100767492B1/ko
Priority to EP04722947A priority patent/EP1610369A4/en
Priority to TW093107994A priority patent/TW200423213A/zh
Publication of JP2004311975A publication Critical patent/JP2004311975A/ja
Publication of JP2004311975A5 publication Critical patent/JP2004311975A5/ja
Application granted granted Critical
Publication of JP4369264B2 publication Critical patent/JP4369264B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2004076958A 2003-03-25 2004-03-17 プラズマ成膜方法 Expired - Fee Related JP4369264B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004076958A JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法
US10/549,859 US20060251828A1 (en) 2003-03-25 2004-03-24 Plasma film-forming method and plasma film-forming apparatus
KR1020057017916A KR100767492B1 (ko) 2003-03-25 2004-03-24 플라즈마 성막방법 및 플라즈마 성막장치
EP04722947A EP1610369A4 (en) 2003-03-25 2004-03-24 PLASMA FILM GENERATING METHOD AND PLASMA FILM GENERATING DEVICE
PCT/JP2004/004070 WO2004086483A1 (ja) 2003-03-25 2004-03-24 プラズマ成膜方法及びプラズマ成膜装置
TW093107994A TW200423213A (en) 2003-03-25 2004-03-24 Plasma filming method and plasma filming device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003083292 2003-03-25
JP2004076958A JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法

Publications (3)

Publication Number Publication Date
JP2004311975A JP2004311975A (ja) 2004-11-04
JP2004311975A5 JP2004311975A5 (https=) 2006-09-21
JP4369264B2 true JP4369264B2 (ja) 2009-11-18

Family

ID=33100373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004076958A Expired - Fee Related JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法

Country Status (6)

Country Link
US (1) US20060251828A1 (https=)
EP (1) EP1610369A4 (https=)
JP (1) JP4369264B2 (https=)
KR (1) KR100767492B1 (https=)
TW (1) TW200423213A (https=)
WO (1) WO2004086483A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1115147A4 (en) * 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP5162108B2 (ja) 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP4883590B2 (ja) * 2006-03-17 2012-02-22 独立行政法人産業技術総合研究所 積層体及び炭素膜堆積方法
KR100980529B1 (ko) * 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
KR100898128B1 (ko) * 2007-07-30 2009-05-18 한국생산기술연구원 잉크젯 프린팅과 플라즈마 표면처리법을 이용한 미세패턴제작방법
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
WO2010129901A2 (en) 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
US9530621B2 (en) * 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
TWI745318B (zh) * 2015-12-02 2021-11-11 德商巴斯夫歐洲公司 產生薄無機膜的方法
JP6664047B2 (ja) * 2016-03-31 2020-03-13 株式会社昭和真空 成膜装置及び成膜方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
WO2019005288A1 (en) 2017-06-27 2019-01-03 Vandermeulen Peter F METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US12318499B2 (en) 2020-03-13 2025-06-03 Peter F. Vandermeulen Methods and systems for medical plasma treatment and generation of plasma activated media
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
KR100382388B1 (ko) * 1997-11-27 2003-05-09 동경 엘렉트론 주식회사 플라즈마 박막증착 방법 및 반도체 디바이스
JP3515347B2 (ja) * 1997-11-27 2004-04-05 東京エレクトロン株式会社 半導体デバイスの製造方法及び半導体デバイス
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP4361625B2 (ja) * 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP2001308071A (ja) * 2000-04-26 2001-11-02 Canon Inc Ｅ面分岐を有する導波管を用いたプラズマ処理装置及びプラズマ処理方法
JP4478352B2 (ja) * 2000-03-29 2010-06-09 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002220668A (ja) * 2000-11-08 2002-08-09 Daikin Ind Ltd 成膜ガスおよびプラズマ成膜方法
JP5010781B2 (ja) * 2001-03-28 2012-08-29 忠弘 大見 プラズマ処理装置

Also Published As

Publication number Publication date
EP1610369A1 (en) 2005-12-28
EP1610369A4 (en) 2007-03-07
KR100767492B1 (ko) 2007-10-17
TWI335610B (https=) 2011-01-01
JP2004311975A (ja) 2004-11-04
TW200423213A (en) 2004-11-01
WO2004086483A1 (ja) 2004-10-07
US20060251828A1 (en) 2006-11-09
KR20050117576A (ko) 2005-12-14

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