KR100767492B1 - 플라즈마 성막방법 및 플라즈마 성막장치 - Google Patents

플라즈마 성막방법 및 플라즈마 성막장치 Download PDF

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Publication number
KR100767492B1
KR100767492B1 KR1020057017916A KR20057017916A KR100767492B1 KR 100767492 B1 KR100767492 B1 KR 100767492B1 KR 1020057017916 A KR1020057017916 A KR 1020057017916A KR 20057017916 A KR20057017916 A KR 20057017916A KR 100767492 B1 KR100767492 B1 KR 100767492B1
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South Korea
Prior art keywords
plasma
antenna member
gas
planar antenna
film
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KR1020057017916A
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English (en)
Korean (ko)
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KR20050117576A (ko
Inventor
야스오 고바야시
고헤이 가와무라
아키라 아사노
야스히로 데라이
겐이치 니시자와
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동경 엘렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020057017916A 2003-03-25 2004-03-24 플라즈마 성막방법 및 플라즈마 성막장치 Expired - Fee Related KR100767492B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00083292 2003-03-25
JP2003083292 2003-03-25
JPJP-P-2004-00076958 2004-03-17
JP2004076958A JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法

Publications (2)

Publication Number Publication Date
KR20050117576A KR20050117576A (ko) 2005-12-14
KR100767492B1 true KR100767492B1 (ko) 2007-10-17

Family

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Family Applications (1)

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KR1020057017916A Expired - Fee Related KR100767492B1 (ko) 2003-03-25 2004-03-24 플라즈마 성막방법 및 플라즈마 성막장치

Country Status (6)

Country Link
US (1) US20060251828A1 (https=)
EP (1) EP1610369A4 (https=)
JP (1) JP4369264B2 (https=)
KR (1) KR100767492B1 (https=)
TW (1) TW200423213A (https=)
WO (1) WO2004086483A1 (https=)

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EP1115147A4 (en) * 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP5162108B2 (ja) 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP4883590B2 (ja) * 2006-03-17 2012-02-22 独立行政法人産業技術総合研究所 積層体及び炭素膜堆積方法
KR100980529B1 (ko) * 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
KR100898128B1 (ko) * 2007-07-30 2009-05-18 한국생산기술연구원 잉크젯 프린팅과 플라즈마 표면처리법을 이용한 미세패턴제작방법
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
WO2010129901A2 (en) 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
US9530621B2 (en) * 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
TWI745318B (zh) * 2015-12-02 2021-11-11 德商巴斯夫歐洲公司 產生薄無機膜的方法
JP6664047B2 (ja) * 2016-03-31 2020-03-13 株式会社昭和真空 成膜装置及び成膜方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
WO2019005288A1 (en) 2017-06-27 2019-01-03 Vandermeulen Peter F METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US12318499B2 (en) 2020-03-13 2025-06-03 Peter F. Vandermeulen Methods and systems for medical plasma treatment and generation of plasma activated media
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置

Citations (2)

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JP2001345312A (ja) * 2000-03-29 2001-12-14 Canon Inc プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002220668A (ja) * 2000-11-08 2002-08-09 Daikin Ind Ltd 成膜ガスおよびプラズマ成膜方法

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US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
KR100382388B1 (ko) * 1997-11-27 2003-05-09 동경 엘렉트론 주식회사 플라즈마 박막증착 방법 및 반도체 디바이스
JP3515347B2 (ja) * 1997-11-27 2004-04-05 東京エレクトロン株式会社 半導体デバイスの製造方法及び半導体デバイス
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP4361625B2 (ja) * 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP2001308071A (ja) * 2000-04-26 2001-11-02 Canon Inc Ｅ面分岐を有する導波管を用いたプラズマ処理装置及びプラズマ処理方法
JP5010781B2 (ja) * 2001-03-28 2012-08-29 忠弘 大見 プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345312A (ja) * 2000-03-29 2001-12-14 Canon Inc プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002220668A (ja) * 2000-11-08 2002-08-09 Daikin Ind Ltd 成膜ガスおよびプラズマ成膜方法

Also Published As

Publication number Publication date
EP1610369A1 (en) 2005-12-28
EP1610369A4 (en) 2007-03-07
TWI335610B (https=) 2011-01-01
JP2004311975A (ja) 2004-11-04
TW200423213A (en) 2004-11-01
JP4369264B2 (ja) 2009-11-18
WO2004086483A1 (ja) 2004-10-07
US20060251828A1 (en) 2006-11-09
KR20050117576A (ko) 2005-12-14

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