TWI335610B - - Google Patents

Download PDF

Info

Publication number
TWI335610B
TWI335610B TW093107994A TW93107994A TWI335610B TW I335610 B TWI335610 B TW I335610B TW 093107994 A TW093107994 A TW 093107994A TW 93107994 A TW93107994 A TW 93107994A TW I335610 B TWI335610 B TW I335610B
Authority
TW
Taiwan
Prior art keywords
gas
plasma
film
gas supply
microwave
Prior art date
Application number
TW093107994A
Other languages
English (en)
Chinese (zh)
Other versions
TW200423213A (en
Inventor
Yasuo Kobayashi
Kohei Kawamura
Akira Asano
Yasuhiro Terai
Kenichi Nishizawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200423213A publication Critical patent/TW200423213A/zh
Application granted granted Critical
Publication of TWI335610B publication Critical patent/TWI335610B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6328Deposition from the gas or vapour phase
    • H10P14/6334Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW093107994A 2003-03-25 2004-03-24 Plasma filming method and plasma filming device TW200423213A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003083292 2003-03-25
JP2004076958A JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法

Publications (2)

Publication Number Publication Date
TW200423213A TW200423213A (en) 2004-11-01
TWI335610B true TWI335610B (https=) 2011-01-01

Family

ID=33100373

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107994A TW200423213A (en) 2003-03-25 2004-03-24 Plasma filming method and plasma filming device

Country Status (6)

Country Link
US (1) US20060251828A1 (https=)
EP (1) EP1610369A4 (https=)
JP (1) JP4369264B2 (https=)
KR (1) KR100767492B1 (https=)
TW (1) TW200423213A (https=)
WO (1) WO2004086483A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1115147A4 (en) * 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP5162108B2 (ja) 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP4883590B2 (ja) * 2006-03-17 2012-02-22 独立行政法人産業技術総合研究所 積層体及び炭素膜堆積方法
KR100980529B1 (ko) * 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
KR100898128B1 (ko) * 2007-07-30 2009-05-18 한국생산기술연구원 잉크젯 프린팅과 플라즈마 표면처리법을 이용한 미세패턴제작방법
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
WO2010129901A2 (en) 2009-05-08 2010-11-11 Vandermeulen Peter F Methods and systems for plasma deposition and treatment
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
US9530621B2 (en) * 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
TWI745318B (zh) * 2015-12-02 2021-11-11 德商巴斯夫歐洲公司 產生薄無機膜的方法
JP6664047B2 (ja) * 2016-03-31 2020-03-13 株式会社昭和真空 成膜装置及び成膜方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
WO2019005288A1 (en) 2017-06-27 2019-01-03 Vandermeulen Peter F METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US12318499B2 (en) 2020-03-13 2025-06-03 Peter F. Vandermeulen Methods and systems for medical plasma treatment and generation of plasma activated media
JP7516674B2 (ja) * 2022-06-21 2024-07-16 株式会社日立ハイテク プラズマ処理装置および加熱装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
KR100382388B1 (ko) * 1997-11-27 2003-05-09 동경 엘렉트론 주식회사 플라즈마 박막증착 방법 및 반도체 디바이스
JP3515347B2 (ja) * 1997-11-27 2004-04-05 東京エレクトロン株式会社 半導体デバイスの製造方法及び半導体デバイス
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP4361625B2 (ja) * 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP2001308071A (ja) * 2000-04-26 2001-11-02 Canon Inc E面分岐を有する導波管を用いたプラズマ処理装置及びプラズマ処理方法
JP4478352B2 (ja) * 2000-03-29 2010-06-09 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002220668A (ja) * 2000-11-08 2002-08-09 Daikin Ind Ltd 成膜ガスおよびプラズマ成膜方法
JP5010781B2 (ja) * 2001-03-28 2012-08-29 忠弘 大見 プラズマ処理装置

Also Published As

Publication number Publication date
EP1610369A1 (en) 2005-12-28
EP1610369A4 (en) 2007-03-07
KR100767492B1 (ko) 2007-10-17
JP2004311975A (ja) 2004-11-04
TW200423213A (en) 2004-11-01
JP4369264B2 (ja) 2009-11-18
WO2004086483A1 (ja) 2004-10-07
US20060251828A1 (en) 2006-11-09
KR20050117576A (ko) 2005-12-14

Similar Documents

Publication Publication Date Title
TWI335610B (https=)
US7520245B2 (en) Plasma processing apparatus
JP4256763B2 (ja) プラズマ処理方法及びプラズマ処理装置
US8969210B2 (en) Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
US10017853B2 (en) Processing method of silicon nitride film and forming method of silicon nitride film
JP4504511B2 (ja) プラズマ処理装置
JPWO2000074127A1 (ja) プラズマプロセス装置
TW200818269A (en) Method of forming film, film forming device and memory medium as well as semiconductor device
TW202117802A (zh) 固化介電質材料的方法與設備
WO2008066172A1 (en) Film forming method, film forming apparatus, storage medium and semiconductor device
TWI406338B (zh) 半導體之膜形成方法與設備
JPH11154672A (ja) プラズマ処理方法
WO2006038623A1 (ja) プラズマ成膜方法およびプラズマ成膜装置
JP4478352B2 (ja) プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
KR20070057284A (ko) 막의 제조방법 및 당해 방법으로 제조된 막을 이용한반도체 장치
US11615957B2 (en) Method for forming boron-based film, formation apparatus
JP7033999B2 (ja) ボロン系膜の成膜方法および成膜装置
KR20190095130A (ko) 보론계 막의 성막 방법 및 성막 장치
US8052799B2 (en) By-product collecting processes for cleaning processes
CN100527365C (zh) 等离子成膜方法以及等离子成膜装置
JP2005123406A (ja) プラズマエッチング方法。
Lisker et al. Sub-atmospheric chemical vapor deposition of SiO2 for dielectric layers in high aspect ratio TSVs
US8021975B2 (en) Plasma processing method for forming a film and an electronic component manufactured by the method
WO1999034430A1 (fr) Film fluorocarbone et procede de fabrication
TWI469199B (zh) 氟碳化物膜中之懸空鍵的控制方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees