JP4361811B2 - 半導体製造装置 - Google Patents

半導体製造装置 Download PDF

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Publication number
JP4361811B2
JP4361811B2 JP2004004483A JP2004004483A JP4361811B2 JP 4361811 B2 JP4361811 B2 JP 4361811B2 JP 2004004483 A JP2004004483 A JP 2004004483A JP 2004004483 A JP2004004483 A JP 2004004483A JP 4361811 B2 JP4361811 B2 JP 4361811B2
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JP
Japan
Prior art keywords
mist
temperature
processing
semiconductor manufacturing
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004004483A
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English (en)
Japanese (ja)
Other versions
JP2005197600A (ja
JP2005197600A5 (enExample
Inventor
俊久 野沢
治 森田
珠樹 湯浅
光司 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004004483A priority Critical patent/JP4361811B2/ja
Priority to KR1020067015082A priority patent/KR100876692B1/ko
Priority to PCT/JP2004/019418 priority patent/WO2005067023A1/ja
Priority to CNB2004800400808A priority patent/CN100440451C/zh
Priority to US10/585,408 priority patent/US20070163502A1/en
Publication of JP2005197600A publication Critical patent/JP2005197600A/ja
Publication of JP2005197600A5 publication Critical patent/JP2005197600A5/ja
Application granted granted Critical
Publication of JP4361811B2 publication Critical patent/JP4361811B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2004004483A 2004-01-09 2004-01-09 半導体製造装置 Expired - Fee Related JP4361811B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004004483A JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置
KR1020067015082A KR100876692B1 (ko) 2004-01-09 2004-12-24 기판처리장치
PCT/JP2004/019418 WO2005067023A1 (ja) 2004-01-09 2004-12-24 基板処理装置
CNB2004800400808A CN100440451C (zh) 2004-01-09 2004-12-24 基板处理装置
US10/585,408 US20070163502A1 (en) 2004-01-09 2004-12-24 Substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004004483A JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置

Publications (3)

Publication Number Publication Date
JP2005197600A JP2005197600A (ja) 2005-07-21
JP2005197600A5 JP2005197600A5 (enExample) 2007-02-15
JP4361811B2 true JP4361811B2 (ja) 2009-11-11

Family

ID=34747122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004004483A Expired - Fee Related JP4361811B2 (ja) 2004-01-09 2004-01-09 半導体製造装置

Country Status (5)

Country Link
US (1) US20070163502A1 (enExample)
JP (1) JP4361811B2 (enExample)
KR (1) KR100876692B1 (enExample)
CN (1) CN100440451C (enExample)
WO (1) WO2005067023A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4597847B2 (ja) * 2005-11-28 2010-12-15 株式会社フジクラ 成膜装置
JP5337482B2 (ja) 2006-05-09 2013-11-06 株式会社アルバック 薄膜製造装置
US20080006044A1 (en) * 2006-07-10 2008-01-10 Ziming Tan Method for controlling temperature
CN101558185B (zh) * 2007-03-29 2011-09-07 新明和工业株式会社 传感器安装结构以及真空成膜装置
CN102077320B (zh) * 2008-07-04 2013-01-23 东京毅力科创株式会社 等离子体处理装置、等离子体处理方法和介电体窗的温度调节机构
JP5281148B2 (ja) * 2009-04-03 2013-09-04 東京エレクトロン株式会社 蒸着ヘッドおよび成膜装置
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5947023B2 (ja) * 2011-11-14 2016-07-06 東京エレクトロン株式会社 温度制御装置、プラズマ処理装置、処理装置及び温度制御方法
KR20140106668A (ko) 2011-12-09 2014-09-03 어플라이드 머티어리얼스, 인코포레이티드 가열 튜브를 냉각시키기 위한 열 교환기 및 그 냉각 방법
WO2013141371A1 (ja) * 2012-03-22 2013-09-26 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および基板処理方法
JP2013243218A (ja) * 2012-05-18 2013-12-05 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
JP6014661B2 (ja) * 2012-05-25 2016-10-25 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10150184B2 (en) 2015-10-21 2018-12-11 Siemens Energy, Inc. Method of forming a cladding layer having an integral channel
US11017984B2 (en) 2016-04-28 2021-05-25 Applied Materials, Inc. Ceramic coated quartz lid for processing chamber
JP6875336B2 (ja) 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
JP7306195B2 (ja) 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
JP7514478B2 (ja) * 2020-12-04 2024-07-11 株式会社デンソー ウエハ処理装置及びウエハ処理方法
GB2609624A (en) * 2021-08-06 2023-02-15 Leybold Gmbh Cooling device, method for cooling a cooling element and layer deposition apparatus
CN113659022B (zh) * 2021-08-16 2023-07-21 广东贝尔试验设备有限公司 一种光伏电池划刻加工用电池芯片温度检测装置
WO2025069789A1 (ja) * 2023-09-29 2025-04-03 東京エレクトロン株式会社 基板処理装置及び冷却方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2631165B1 (fr) * 1988-05-05 1992-02-21 Moulene Daniel Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support
JPH0255292A (ja) * 1988-08-19 1990-02-23 Fujitsu Ltd 反応管の冷却方法
US5316579A (en) * 1988-12-27 1994-05-31 Symetrix Corporation Apparatus for forming a thin film with a mist forming means
EP0634778A1 (en) * 1993-07-12 1995-01-18 The Boc Group, Inc. Hollow cathode array
EP0827186A3 (en) * 1996-08-29 1999-12-15 Tokyo Electron Limited Substrate treatment system
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
CN1251294C (zh) * 1999-11-15 2006-04-12 兰姆研究有限公司 等离子体加工装置的温度控制系统
JP2001156047A (ja) * 1999-11-30 2001-06-08 Mitsubishi Electric Corp 半導体製造装置
JP2003059884A (ja) * 2001-08-20 2003-02-28 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2003174016A (ja) * 2001-12-07 2003-06-20 Tokyo Electron Ltd 真空処理装置
US6916502B2 (en) * 2002-02-11 2005-07-12 Battelle Energy Alliance, Llc Systems and methods for coating conduit interior surfaces utilizing a thermal spray gun with extension arm
JP4022459B2 (ja) * 2002-09-30 2007-12-19 助川電気工業株式会社 冷却器付加熱装置

Also Published As

Publication number Publication date
JP2005197600A (ja) 2005-07-21
KR100876692B1 (ko) 2008-12-31
WO2005067023A1 (ja) 2005-07-21
US20070163502A1 (en) 2007-07-19
CN100440451C (zh) 2008-12-03
CN1902737A (zh) 2007-01-24
KR20060129318A (ko) 2006-12-15

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