JP4353673B2 - ポリッシング方法 - Google Patents

ポリッシング方法 Download PDF

Info

Publication number
JP4353673B2
JP4353673B2 JP2002116721A JP2002116721A JP4353673B2 JP 4353673 B2 JP4353673 B2 JP 4353673B2 JP 2002116721 A JP2002116721 A JP 2002116721A JP 2002116721 A JP2002116721 A JP 2002116721A JP 4353673 B2 JP4353673 B2 JP 4353673B2
Authority
JP
Japan
Prior art keywords
polishing
top ring
semiconductor wafer
ring
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002116721A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003311609A5 (cg-RX-API-DMAC7.html
JP2003311609A (ja
Inventor
哲二 戸川
誠 福島
邦彦 桜井
博 吉田
治 鍋谷
照彦 市村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002116721A priority Critical patent/JP4353673B2/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to DE60314505T priority patent/DE60314505T2/de
Priority to CNB038007592A priority patent/CN100415447C/zh
Priority to TW092108882A priority patent/TWI285575B/zh
Priority to AU2003227414A priority patent/AU2003227414A1/en
Priority to US10/481,019 priority patent/US7163895B2/en
Priority to EP03717630A priority patent/EP1495837B1/en
Priority to KR1020037016156A priority patent/KR100973759B1/ko
Priority to PCT/JP2003/004894 priority patent/WO2003086706A1/ja
Priority to CNA2008101311553A priority patent/CN101327573A/zh
Publication of JP2003311609A publication Critical patent/JP2003311609A/ja
Publication of JP2003311609A5 publication Critical patent/JP2003311609A5/ja
Priority to US11/272,825 priority patent/US20060079092A1/en
Application granted granted Critical
Publication of JP4353673B2 publication Critical patent/JP4353673B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002116721A 2002-04-18 2002-04-18 ポリッシング方法 Expired - Lifetime JP4353673B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2002116721A JP4353673B2 (ja) 2002-04-18 2002-04-18 ポリッシング方法
PCT/JP2003/004894 WO2003086706A1 (en) 2002-04-18 2003-04-17 Polishing method
TW092108882A TWI285575B (en) 2002-04-18 2003-04-17 Polishing method
AU2003227414A AU2003227414A1 (en) 2002-04-18 2003-04-17 Polishing method
US10/481,019 US7163895B2 (en) 2002-04-18 2003-04-17 Polishing method
EP03717630A EP1495837B1 (en) 2002-04-18 2003-04-17 Polishing method
DE60314505T DE60314505T2 (de) 2002-04-18 2003-04-17 Polierverfahren
CNB038007592A CN100415447C (zh) 2002-04-18 2003-04-17 抛光装置及抛光方法
CNA2008101311553A CN101327573A (zh) 2002-04-18 2003-04-17 抛光方法
KR1020037016156A KR100973759B1 (ko) 2002-04-18 2003-04-17 폴리싱방법
US11/272,825 US20060079092A1 (en) 2002-04-18 2005-11-15 Polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002116721A JP4353673B2 (ja) 2002-04-18 2002-04-18 ポリッシング方法

Publications (3)

Publication Number Publication Date
JP2003311609A JP2003311609A (ja) 2003-11-05
JP2003311609A5 JP2003311609A5 (cg-RX-API-DMAC7.html) 2005-07-07
JP4353673B2 true JP4353673B2 (ja) 2009-10-28

Family

ID=29243464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002116721A Expired - Lifetime JP4353673B2 (ja) 2002-04-18 2002-04-18 ポリッシング方法

Country Status (9)

Country Link
US (2) US7163895B2 (cg-RX-API-DMAC7.html)
EP (1) EP1495837B1 (cg-RX-API-DMAC7.html)
JP (1) JP4353673B2 (cg-RX-API-DMAC7.html)
KR (1) KR100973759B1 (cg-RX-API-DMAC7.html)
CN (2) CN101327573A (cg-RX-API-DMAC7.html)
AU (1) AU2003227414A1 (cg-RX-API-DMAC7.html)
DE (1) DE60314505T2 (cg-RX-API-DMAC7.html)
TW (1) TWI285575B (cg-RX-API-DMAC7.html)
WO (1) WO2003086706A1 (cg-RX-API-DMAC7.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101023429B (zh) * 2004-07-02 2010-09-01 斯特拉斯鲍公司 用于处理晶片的方法和系统
US8083571B2 (en) * 2004-11-01 2011-12-27 Ebara Corporation Polishing apparatus
JP5248127B2 (ja) 2008-01-30 2013-07-31 株式会社荏原製作所 研磨方法及び研磨装置
KR101958874B1 (ko) 2008-06-04 2019-03-15 가부시키가이샤 에바라 세이사꾸쇼 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법
JP5390807B2 (ja) * 2008-08-21 2014-01-15 株式会社荏原製作所 研磨方法および装置
KR101022277B1 (ko) * 2009-02-25 2011-03-21 그린스펙(주) 실리콘 베어 웨이퍼 연마장치용 캐리어 헤드
US20120264359A1 (en) * 2011-04-13 2012-10-18 Nanya Technology Corporation Membrane
JP6158637B2 (ja) * 2012-08-28 2017-07-05 株式会社荏原製作所 弾性膜及び基板保持装置
CN103645613B (zh) * 2013-12-05 2016-06-08 上海现代先进超精密制造中心有限公司 一种用于光刻机角度镜接边抛光的方法
JP6466785B2 (ja) * 2015-06-09 2019-02-06 株式会社ディスコ 搬送装置
CN106334997A (zh) * 2016-10-20 2017-01-18 天津华海清科机电科技有限公司 抛光头以及具有其的抛光机
JP7022980B2 (ja) * 2018-01-05 2022-02-21 不二越機械工業株式会社 ウェーハ剥離装置およびウェーハ研磨装置
US12691547B2 (en) * 2023-09-27 2026-07-28 Applied Materials, Inc. CMP inner ring in smart head
CN117885033B (zh) * 2023-12-26 2026-04-03 北京晶亦精微科技股份有限公司 一种取放片装置、双面加工的化学机械抛光系统及方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918869A (en) * 1987-10-28 1990-04-24 Fujikoshi Machinery Corporation Method for lapping a wafer material and an apparatus therefor
JP3550180B2 (ja) 1994-04-28 2004-08-04 同和鉱業株式会社 ウェハの搬送方法および搬送装置
US5762539A (en) * 1996-02-27 1998-06-09 Ebara Corporation Apparatus for and method for polishing workpiece
US6210255B1 (en) 1998-09-08 2001-04-03 Applied Materials, Inc. Carrier head for chemical mechanical polishing a substrate
JP2000127026A (ja) 1998-10-26 2000-05-09 Speedfam-Ipec Co Ltd ウエハ研磨装置
US6358128B1 (en) * 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
US6722963B1 (en) * 1999-08-03 2004-04-20 Micron Technology, Inc. Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane
US6506105B1 (en) * 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
WO2001087541A2 (en) * 2000-05-12 2001-11-22 Multi-Planar Technologies, Inc. Pneumatic diaphragm head having an independent retaining ring and multi-region pressure control, and method to use the same
US6857945B1 (en) * 2000-07-25 2005-02-22 Applied Materials, Inc. Multi-chamber carrier head with a flexible membrane
JP2002187060A (ja) * 2000-10-11 2002-07-02 Ebara Corp 基板保持装置、ポリッシング装置、及び研磨方法
US6652362B2 (en) * 2000-11-23 2003-11-25 Samsung Electronics Co., Ltd. Apparatus for polishing a semiconductor wafer and method therefor
CN1260778C (zh) * 2000-12-04 2006-06-21 株式会社荏原制作所 基片加工方法
US6746318B2 (en) * 2001-10-11 2004-06-08 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers

Also Published As

Publication number Publication date
EP1495837B1 (en) 2007-06-20
KR100973759B1 (ko) 2010-08-04
CN100415447C (zh) 2008-09-03
CN101327573A (zh) 2008-12-24
EP1495837A4 (en) 2005-11-02
US20060079092A1 (en) 2006-04-13
US20040198011A1 (en) 2004-10-07
CN1541151A (zh) 2004-10-27
TW200306245A (en) 2003-11-16
KR20040110069A (ko) 2004-12-29
JP2003311609A (ja) 2003-11-05
DE60314505T2 (de) 2008-02-28
DE60314505D1 (de) 2007-08-02
TWI285575B (en) 2007-08-21
US7163895B2 (en) 2007-01-16
AU2003227414A1 (en) 2003-10-27
EP1495837A1 (en) 2005-01-12
WO2003086706A1 (en) 2003-10-23

Similar Documents

Publication Publication Date Title
US7942725B2 (en) Polishing apparatus
US7083507B2 (en) Substrate holding apparatus
KR100876381B1 (ko) 기판 고정 장치 및 기판 폴리싱 장치
KR100973759B1 (ko) 폴리싱방법
JP4107835B2 (ja) 基板保持装置及びポリッシング装置
JP5197644B2 (ja) 研磨装置及び研磨方法
JP2002113653A (ja) 基板保持装置及び該基板保持装置を備えたポリッシング装置
JP2004193289A (ja) ポリッシング方法
JP4049579B2 (ja) 基板保持装置及びポリッシング装置
JP3856634B2 (ja) 基板保持装置及び該基板保持装置を備えたポリッシング装置
JP2008066761A (ja) 基板保持装置
JP2003266301A (ja) ポリッシング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071109

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080515

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20080515

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080619

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090407

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090605

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090707

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090728

R150 Certificate of patent or registration of utility model

Ref document number: 4353673

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120807

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120807

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130807

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term