JP4346655B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4346655B2 JP4346655B2 JP2007129577A JP2007129577A JP4346655B2 JP 4346655 B2 JP4346655 B2 JP 4346655B2 JP 2007129577 A JP2007129577 A JP 2007129577A JP 2007129577 A JP2007129577 A JP 2007129577A JP 4346655 B2 JP4346655 B2 JP 4346655B2
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- pixel area
- shielding layer
- light shielding
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- light
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000010410 layer Substances 0.000 claims description 123
- 239000011247 coating layer Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (5)
- 半導体基板上に形成され、入射光に応じた画像信号を生成する画素エリアと、
前記画素エリアの外周の前記半導体基板上に形成され、前記画素エリアの近傍にスリットを有し、前記入射光を遮光する遮光層と、
前記画素エリア内、前記遮光層上及び前記スリット内に形成されたパッシベーション膜と、
前記遮光層が有する前記スリット内及び前記画素エリア内の前記パッシベーション膜上に形成されたコーティング層と、
前記画素エリア内の前記コーティング層上に形成されたマイクロレンズと、
を具備することを特徴とする半導体装置。 - 半導体基板上に形成され、入射光に応じた画像信号を生成する画素エリアと、
前記画素エリアが形成された前記半導体基板上に形成された配線層と、
前記配線層を覆うように、前記半導体基板上に形成された層間絶縁膜と、
前記画素エリアの外周の前記層間絶縁膜上に形成され、前記画素エリアの近傍にスリットを有し、前記入射光を遮光する遮光層と、
前記画素エリア内、前記遮光層上及び前記スリット内に形成されたパッシベーション膜と、
前記遮光層が有する前記スリット内及び前記画素エリア内の前記パッシベーション膜上に形成されたコーティング層と、
前記画素エリア内の前記コーティング層上に形成されたマイクロレンズと、
を具備することを特徴とする半導体装置。 - 前記遮光層が有する前記スリットは、前記画素エリアを囲むように形成されていることを特徴とする請求項1または2に記載の半導体装置。
- 半導体基板上に形成され、入射光に応じた画像信号を生成する画素エリアと、
前記画素エリアが形成された前記半導体基板上に形成された配線層と、
前記配線層を覆うように、前記半導体基板上に形成された層間絶縁膜と、
前記画素エリアを囲むように形成された第1の遮光層と、
前記第1の遮光層に離間して設けられ、前記第1の遮光層を囲むように形成された第2の遮光層と、
前記画素エリア内、前記第1の遮光層上、前記第2の遮光層上、及び前記第1の遮光層と前記第2の遮光層間に形成されたパッシベーション膜と、
前記第1の遮光層と前記第2の遮光層間の前記パッシベーション膜上、及び前記画素エリア内の前記パッシベーション膜上に形成されたコーティング層と、
前記画素エリア内の前記コーティング層上に形成されたマイクロレンズと、
を具備することを特徴とする半導体装置。 - 前記遮光層は、多層に形成されたメタル配線層のうち、最上層のメタル配線層で形成されていることを特徴とする請求項1乃至4のいずれかに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007129577A JP4346655B2 (ja) | 2007-05-15 | 2007-05-15 | 半導体装置 |
US12/119,689 US8084798B2 (en) | 2007-05-15 | 2008-05-13 | Semiconductor device having image sensor |
US13/308,621 US8334555B2 (en) | 2007-05-15 | 2011-12-01 | Semiconductor device having image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007129577A JP4346655B2 (ja) | 2007-05-15 | 2007-05-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008288271A JP2008288271A (ja) | 2008-11-27 |
JP4346655B2 true JP4346655B2 (ja) | 2009-10-21 |
Family
ID=40026654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007129577A Expired - Fee Related JP4346655B2 (ja) | 2007-05-15 | 2007-05-15 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8084798B2 (ja) |
JP (1) | JP4346655B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007051752B4 (de) * | 2007-10-30 | 2010-01-28 | X-Fab Semiconductor Foundries Ag | Licht blockierende Schichtenfolge und Verfahren zu deren Herstellung |
JP5298617B2 (ja) * | 2008-04-24 | 2013-09-25 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
JP5513872B2 (ja) | 2009-12-18 | 2014-06-04 | 株式会社東芝 | 固体撮像装置 |
EP2560208B1 (de) | 2011-08-16 | 2018-02-21 | Balluff GmbH | Optoelektronischer Sensor |
US9041135B2 (en) | 2013-03-13 | 2015-05-26 | The Aerospace Corporation | Monolithic sun sensors assemblies thereof |
KR102149772B1 (ko) | 2013-11-14 | 2020-08-31 | 삼성전자주식회사 | 이미지 센서 및 이를 제조하는 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW369726B (en) | 1998-05-04 | 1999-09-11 | United Microelectronics Corp | Structure and producing method of microlens on color filter of sensor device |
US6653617B2 (en) * | 2000-07-03 | 2003-11-25 | Canon Kabushiki Kaisha | Photoelectric conversion device |
JP2002076322A (ja) | 2000-08-31 | 2002-03-15 | Sony Corp | 固体撮像装置および製造方法 |
US7139028B2 (en) * | 2000-10-17 | 2006-11-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6891207B2 (en) | 2003-01-09 | 2005-05-10 | International Business Machines Corporation | Electrostatic discharge protection networks for triple well semiconductor devices |
KR100593162B1 (ko) * | 2004-03-22 | 2006-06-26 | 매그나칩 반도체 유한회사 | 이미지센서 및 그 제조방법 |
US7180044B2 (en) * | 2004-12-03 | 2007-02-20 | United Microelectronics Corp. | Image sensor device with color filters and manufacturing method thereof |
KR100664790B1 (ko) * | 2005-06-27 | 2007-01-04 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
US7537951B2 (en) * | 2006-11-15 | 2009-05-26 | International Business Machines Corporation | Image sensor including spatially different active and dark pixel interconnect patterns |
JP5513872B2 (ja) | 2009-12-18 | 2014-06-04 | 株式会社東芝 | 固体撮像装置 |
-
2007
- 2007-05-15 JP JP2007129577A patent/JP4346655B2/ja not_active Expired - Fee Related
-
2008
- 2008-05-13 US US12/119,689 patent/US8084798B2/en not_active Expired - Fee Related
-
2011
- 2011-12-01 US US13/308,621 patent/US8334555B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008288271A (ja) | 2008-11-27 |
US8084798B2 (en) | 2011-12-27 |
US8334555B2 (en) | 2012-12-18 |
US20120068293A1 (en) | 2012-03-22 |
US20080283948A1 (en) | 2008-11-20 |
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