JP4340638B2 - 基板の表側または裏側に結像するためのリソグラフィ装置、基板識別方法、デバイス製造方法、基板、およびコンピュータプログラム - Google Patents

基板の表側または裏側に結像するためのリソグラフィ装置、基板識別方法、デバイス製造方法、基板、およびコンピュータプログラム Download PDF

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JP4340638B2
JP4340638B2 JP2005099664A JP2005099664A JP4340638B2 JP 4340638 B2 JP4340638 B2 JP 4340638B2 JP 2005099664 A JP2005099664 A JP 2005099664A JP 2005099664 A JP2005099664 A JP 2005099664A JP 4340638 B2 JP4340638 B2 JP 4340638B2
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Prior art keywords
substrate
forms
lithographic apparatus
alignment
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005099664A
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English (en)
Japanese (ja)
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JP2005252281A (ja
JP2005252281A5 (enExample
Inventor
ファン デル フェーン ミカエル
ゲラルダス マリア デ モル クリスティアヌス
ヴィルヘルムス マリア ファン ブエル ヘンリクス
フレデリク フリソ クリンカーメール ヤコブ
ヤコブス アニセトゥス ブルインスマ アナスタシウス
ヘンドリクス アントニウス レーンデルス マルティヌス
アドリアーン ファン ミエルロ フベルト
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication date
Priority claimed from US10/790,252 external-priority patent/US20050195378A1/en
Priority claimed from US10/954,654 external-priority patent/US7177009B2/en
Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2005252281A publication Critical patent/JP2005252281A/ja
Publication of JP2005252281A5 publication Critical patent/JP2005252281A5/ja
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Publication of JP4340638B2 publication Critical patent/JP4340638B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005099664A 2004-03-02 2005-03-02 基板の表側または裏側に結像するためのリソグラフィ装置、基板識別方法、デバイス製造方法、基板、およびコンピュータプログラム Expired - Fee Related JP4340638B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,252 US20050195378A1 (en) 2004-03-02 2004-03-02 Lithographic apparatus, method of substrate identification, device manufacturing method, substrate, and computer program
US10/954,654 US7177009B2 (en) 2004-10-01 2004-10-01 Position determination method and lithographic apparatus

Publications (3)

Publication Number Publication Date
JP2005252281A JP2005252281A (ja) 2005-09-15
JP2005252281A5 JP2005252281A5 (enExample) 2005-10-27
JP4340638B2 true JP4340638B2 (ja) 2009-10-07

Family

ID=35032411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005099664A Expired - Fee Related JP4340638B2 (ja) 2004-03-02 2005-03-02 基板の表側または裏側に結像するためのリソグラフィ装置、基板識別方法、デバイス製造方法、基板、およびコンピュータプログラム

Country Status (2)

Country Link
US (1) US7480028B2 (enExample)
JP (1) JP4340638B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050118532A1 (en) * 2003-11-14 2005-06-02 International Business Machines Corporation Back to Front Alignment with Latent Imaging
EP1744217B1 (en) * 2005-07-12 2012-03-14 ASML Netherlands B.V. Method of selecting a grid model for correcting grid deformations in a lithographic apparatus and lithographic assembly using the same
US20080020303A1 (en) * 2006-07-24 2008-01-24 Wei Wu Alignment for contact lithography
US7808613B2 (en) * 2006-08-03 2010-10-05 Asml Netherlands B.V. Individual wafer history storage for overlay corrections
JP5064079B2 (ja) * 2007-03-30 2012-10-31 富士フイルム株式会社 描画方法および描画システム
DE102009019140B4 (de) 2009-04-29 2017-03-02 Carl Zeiss Smt Gmbh Verfahren zum Kalibrieren einer Positionsmessvorrichtung und Verfahren zum Vermessen einer Maske
US10976572B2 (en) 2011-12-22 2021-04-13 Carl Zeiss Vision International Gmbh Method for storing information on a spectacles lens, spectacles lens blank or spectacles lens semi-finished product
JP6945316B2 (ja) * 2017-03-24 2021-10-06 キヤノン株式会社 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法
US12220819B2 (en) * 2020-10-21 2025-02-11 Divergent Technologies, Inc. 3-D printed metrology feature geometry and detection
CN114908329B (zh) * 2021-02-08 2024-03-08 台湾积体电路制造股份有限公司 校正方法及半导体制造设备
US12353123B2 (en) * 2022-05-23 2025-07-08 Winbond Electronics Corp. Semiconductor manufacturing apparatus and semiconductor manufacturing method thereof
CN117457550B (zh) * 2023-12-26 2024-03-29 深圳市森美协尔科技有限公司 晶圆对准方法及相关装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443358A (ja) * 1990-06-11 1992-02-13 Fujitsu Ltd チップ位置識別パターンの形成方法
JP2789818B2 (ja) 1990-12-27 1998-08-27 富士電機株式会社 半導体ウエハの識別方法
JPH05217843A (ja) 1992-01-27 1993-08-27 Nec Corp 縮小投影露光装置
JP3637680B2 (ja) 1996-04-02 2005-04-13 株式会社ニコン 露光装置
AU1078700A (en) * 1998-11-06 2000-05-29 Nikon Corporation Exposure method and exposure apparatus
US6768539B2 (en) * 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
EP1353229A1 (en) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP2004006527A (ja) * 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
DE60322331D1 (de) * 2002-12-19 2008-09-04 Asml Netherlands Bv Verfahren zur Herstellung eines Artikels unter Verwendung einer lithographischen Projektionsmaske
JP3913715B2 (ja) * 2003-06-18 2007-05-09 株式会社東芝 不良検出方法
US7177009B2 (en) * 2004-10-01 2007-02-13 Asml Netherlands B.V. Position determination method and lithographic apparatus
US7259828B2 (en) * 2004-05-14 2007-08-21 Asml Netherlands B.V. Alignment system and method and device manufactured thereby

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Publication number Publication date
US7480028B2 (en) 2009-01-20
JP2005252281A (ja) 2005-09-15
US20050248740A1 (en) 2005-11-10

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