JP4329166B2 - Ｉｉｉ族窒化物半導体光デバイス - Google Patents

Ｉｉｉ族窒化物半導体光デバイス Download PDF

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Publication number
JP4329166B2
JP4329166B2 JP17639999A JP17639999A JP4329166B2 JP 4329166 B2 JP4329166 B2 JP 4329166B2 JP 17639999 A JP17639999 A JP 17639999A JP 17639999 A JP17639999 A JP 17639999A JP 4329166 B2 JP4329166 B2 JP 4329166B2
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Japan
Prior art keywords
layer
nitride semiconductor
buffer layer
group iii
optical device
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Expired - Fee Related
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JP17639999A
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Japanese (ja)
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JP2001007396A (ja
JP2001007396A5 (enrdf_load_stackoverflow
Inventor
隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP17639999A 1999-06-23 1999-06-23 Ｉｉｉ族窒化物半導体光デバイス Expired - Fee Related JP4329166B2 (ja)

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JP17639999A JP4329166B2 (ja) 1999-06-23 1999-06-23 Ｉｉｉ族窒化物半導体光デバイス

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JP17639999A JP4329166B2 (ja) 1999-06-23 1999-06-23 Ｉｉｉ族窒化物半導体光デバイス

Publications (3)

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JP2001007396A JP2001007396A (ja) 2001-01-12
JP2001007396A5 JP2001007396A5 (enrdf_load_stackoverflow) 2006-01-12
JP4329166B2 true JP4329166B2 (ja) 2009-09-09

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JP17639999A Expired - Fee Related JP4329166B2 (ja) 1999-06-23 1999-06-23 Ｉｉｉ族窒化物半導体光デバイス

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8201916B2 (en) 2009-08-31 2012-06-19 Brother Kogyo Kabushiki Kaisha Image recorder
US8742395B2 (en) 2012-01-13 2014-06-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1424409A4 (en) * 2001-09-06 2009-04-15 Covalent Materials Corp SEMICONDUCTOR DISC AND METHOD FOR THE PRODUCTION THEREOF
JP4766642B2 (ja) * 2001-09-06 2011-09-07 コバレントマテリアル株式会社 ＳｉＣ半導体とＳｉＣエピタキシャル成長方法
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
KR101167590B1 (ko) 2002-04-15 2012-07-27 더 리전츠 오브 더 유니버시티 오브 캘리포니아 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막
JP2005244201A (ja) * 2004-01-28 2005-09-08 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
WO2006120908A1 (ja) 2005-05-02 2006-11-16 Nichia Corporation 窒化物系半導体素子及びその製造方法
KR100750932B1 (ko) 2005-07-31 2007-08-22 삼성전자주식회사 기판 분해 방지막을 사용한 단결정 질화물계 반도체 성장및 이를 이용한 고품위 질화물계 발광소자 제작
JPWO2010001607A1 (ja) * 2008-07-03 2011-12-15 パナソニック株式会社 窒化物半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8201916B2 (en) 2009-08-31 2012-06-19 Brother Kogyo Kabushiki Kaisha Image recorder
US8742395B2 (en) 2012-01-13 2014-06-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device

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JP2001007396A (ja) 2001-01-12

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