JP2001007396A5 - - Google Patents
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- Publication number
- JP2001007396A5 JP2001007396A5 JP1999176399A JP17639999A JP2001007396A5 JP 2001007396 A5 JP2001007396 A5 JP 2001007396A5 JP 1999176399 A JP1999176399 A JP 1999176399A JP 17639999 A JP17639999 A JP 17639999A JP 2001007396 A5 JP2001007396 A5 JP 2001007396A5
- Authority
- JP
- Japan
- Prior art keywords
- optical device
- nitride semiconductor
- semiconductor optical
- group iii
- iii nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17639999A JP4329166B2 (ja) | 1999-06-23 | 1999-06-23 | Ｉｉｉ族窒化物半導体光デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17639999A JP4329166B2 (ja) | 1999-06-23 | 1999-06-23 | Ｉｉｉ族窒化物半導体光デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001007396A JP2001007396A (ja) | 2001-01-12 |
| JP2001007396A5 true JP2001007396A5 (enrdf_load_stackoverflow) | 2006-01-12 |
| JP4329166B2 JP4329166B2 (ja) | 2009-09-09 |
Family
ID=16013001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17639999A Expired - Fee Related JP4329166B2 (ja) | 1999-06-23 | 1999-06-23 | Ｉｉｉ族窒化物半導体光デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4329166B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1424409A4 (en) * | 2001-09-06 | 2009-04-15 | Covalent Materials Corp | SEMICONDUCTOR DISC AND METHOD FOR THE PRODUCTION THEREOF |
| JP4766642B2 (ja) * | 2001-09-06 | 2011-09-07 | コバレントマテリアル株式会社 | ＳｉＣ半導体とＳｉＣエピタキシャル成長方法 |
| US8809867B2 (en) | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
| KR101167590B1 (ko) | 2002-04-15 | 2012-07-27 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막 |
| JP2005244201A (ja) * | 2004-01-28 | 2005-09-08 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
| WO2006120908A1 (ja) | 2005-05-02 | 2006-11-16 | Nichia Corporation | 窒化物系半導体素子及びその製造方法 |
| KR100750932B1 (ko) | 2005-07-31 | 2007-08-22 | 삼성전자주식회사 | 기판 분해 방지막을 사용한 단결정 질화물계 반도체 성장및 이를 이용한 고품위 질화물계 발광소자 제작 |
| JPWO2010001607A1 (ja) * | 2008-07-03 | 2011-12-15 | パナソニック株式会社 | 窒化物半導体装置 |
| JP5375451B2 (ja) | 2009-08-31 | 2013-12-25 | ブラザー工業株式会社 | 画像記録装置 |
| US8742395B2 (en) | 2012-01-13 | 2014-06-03 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
-
1999
- 1999-06-23 JP JP17639999A patent/JP4329166B2/ja not_active Expired - Fee Related
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