JP2004104088A5 - - Google Patents

Download PDF

Info

Publication number
JP2004104088A5
JP2004104088A5 JP2003184397A JP2003184397A JP2004104088A5 JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5 JP 2003184397 A JP2003184397 A JP 2003184397A JP 2003184397 A JP2003184397 A JP 2003184397A JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
semiconductor device
well
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003184397A
Other languages
English (en)
Japanese (ja)
Other versions
JP3951973B2 (ja
JP2004104088A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003184397A priority Critical patent/JP3951973B2/ja
Priority claimed from JP2003184397A external-priority patent/JP3951973B2/ja
Publication of JP2004104088A publication Critical patent/JP2004104088A/ja
Publication of JP2004104088A5 publication Critical patent/JP2004104088A5/ja
Application granted granted Critical
Publication of JP3951973B2 publication Critical patent/JP3951973B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003184397A 2003-06-27 2003-06-27 窒化物半導体素子 Expired - Fee Related JP3951973B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003184397A JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003184397A JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12981098A Division JP3857417B2 (ja) 1998-05-13 1998-05-13 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2004104088A JP2004104088A (ja) 2004-04-02
JP2004104088A5 true JP2004104088A5 (enrdf_load_stackoverflow) 2005-10-06
JP3951973B2 JP3951973B2 (ja) 2007-08-01

Family

ID=32290611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003184397A Expired - Fee Related JP3951973B2 (ja) 2003-06-27 2003-06-27 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP3951973B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5149093B2 (ja) * 2003-06-26 2013-02-20 住友電気工業株式会社 ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法
US7709284B2 (en) * 2006-08-16 2010-05-04 The Regents Of The University Of California Method for deposition of magnesium doped (Al, In, Ga, B)N layers
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
TWI533351B (zh) 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長
JP2008244360A (ja) * 2007-03-28 2008-10-09 Furukawa Electric Co Ltd:The 半導体発光素子
JP5181885B2 (ja) * 2007-10-05 2013-04-10 住友電気工業株式会社 ＧａＮ基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ
EP2045374A3 (en) 2007-10-05 2011-02-16 Sumitomo Electric Industries, Ltd. Method of manufacturing a GaN substrate and a GaN epitaxial wafer
JP4912386B2 (ja) * 2008-11-26 2012-04-11 シャープ株式会社 ＩｎＧａＮ層の製造方法
JP5504618B2 (ja) * 2008-12-03 2014-05-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP5143076B2 (ja) * 2009-04-09 2013-02-13 シャープ株式会社 窒化物半導体発光素子の製造方法
US8218595B2 (en) * 2010-05-28 2012-07-10 Corning Incorporated Enhanced planarity in GaN edge emitting lasers

Similar Documents

Publication Publication Date Title
TWI345841B (en) Heterostructures for iii-nitride light emitting devices
CA2528719C (en) Nitride semiconductor light emitting device
TW451536B (en) Nitride semiconductor device
JP2005507155A5 (enrdf_load_stackoverflow)
TWI263387B (en) Light emitting device structure provided with nitride bulk mono-crystal layers
TW587355B (en) Nitride semiconductor device
JP2009260397A5 (enrdf_load_stackoverflow)
EP2075855A3 (en) Group III nitride based light emitting diode with a superlattice structure
JP2013065897A (ja) 窒化物半導体発光素子
JP2004031770A5 (enrdf_load_stackoverflow)
DE60234330D1 (de) Halbleiterelement aus galliumnitridzusammensetzung
US8872157B2 (en) Nitride semiconductor structure and semiconductor light emitting device including the same
JP2004104088A5 (enrdf_load_stackoverflow)
CN103489975A (zh) 一种具有隧道结结构的氮极性面发光二极管
TW200507112A (en) Nitride semiconductor device and method for manufacturing the same
JP2004260114A (ja) 化合物半導体素子
TW200512959A (en) Nitride semiconductor device and the manufacturing method thereof
TW200637036A (en) Nitride semiconductor device
JP2014053639A5 (ja) 半導体素子用エピタキシャル基板の作製方法、半導体素子用エピタキシャル基板、および半導体素子
WO2006026932A1 (en) Iiia group nitride semiconductor with low-impedance ohmic contact
CN110828627A (zh) 可协变应力AlN结构及其制备方法
US20090321780A1 (en) Gallium nitride-based light emitting device with roughened surface and fabricating method thereof
TW200515623A (en) Light-emitting device and method for manufacturing the same
JP2003101154A5 (enrdf_load_stackoverflow)
JP2003060234A5 (enrdf_load_stackoverflow)