JP2004104088A5 - - Google Patents

Claims (6)

Between the nitride semiconductor layer containing an n-type impurity and the nitride semiconductor layer containing a p-type impurity, a well layer made of a first nitride semiconductor containing at least In and a third nitride semiconductor containing at least In In a nitride semiconductor device including an active layer having a barrier layer,
The active layer includes a second nitride semiconductor layer having a bandgap energy equal to or greater than that of the barrier layer between the well layer and the barrier layer.   2. The nitride semiconductor device according to claim 1, wherein the barrier layer has a band gap energy larger than that of the well layer or is thicker than that of the well layer.   The nitride semiconductor device according to claim 1, wherein the barrier layer has an In amount that is smaller than an In amount of the well layer.   The nitride semiconductor device according to claim 1, wherein the second nitride semiconductor layer has a decomposition temperature higher than that of the well layer. 5. The nitride semiconductor device according to claim 1, wherein the second nitride semiconductor layer is AlGaN or GaN (Al _X Ga _1-X N, 0 ≦ X <1).   5. The nitride semiconductor device according to claim 1, wherein the active layer includes at least a barrier layer + a well layer + a second nitride semiconductor layer + a barrier layer.