JP4305707B2 - 基板の製造方法および半導体装置の製造方法 - Google Patents

基板の製造方法および半導体装置の製造方法 Download PDF

Info

Publication number
JP4305707B2
JP4305707B2 JP2000196861A JP2000196861A JP4305707B2 JP 4305707 B2 JP4305707 B2 JP 4305707B2 JP 2000196861 A JP2000196861 A JP 2000196861A JP 2000196861 A JP2000196861 A JP 2000196861A JP 4305707 B2 JP4305707 B2 JP 4305707B2
Authority
JP
Japan
Prior art keywords
substrate
ridge portion
manufacturing
mask pattern
wet etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000196861A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001332530A (ja
JP2001332530A5 (nl
Inventor
豪作 加藤
健博 谷口
展賢 岡野
康成 半澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000196861A priority Critical patent/JP4305707B2/ja
Publication of JP2001332530A publication Critical patent/JP2001332530A/ja
Publication of JP2001332530A5 publication Critical patent/JP2001332530A5/ja
Application granted granted Critical
Publication of JP4305707B2 publication Critical patent/JP4305707B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP2000196861A 2000-03-14 2000-06-29 基板の製造方法および半導体装置の製造方法 Expired - Fee Related JP4305707B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000196861A JP4305707B2 (ja) 2000-03-14 2000-06-29 基板の製造方法および半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-70521 2000-03-14
JP2000070521 2000-03-14
JP2000196861A JP4305707B2 (ja) 2000-03-14 2000-06-29 基板の製造方法および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006308576A Division JP2007088503A (ja) 2000-03-14 2006-11-15 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2001332530A JP2001332530A (ja) 2001-11-30
JP2001332530A5 JP2001332530A5 (nl) 2006-12-28
JP4305707B2 true JP4305707B2 (ja) 2009-07-29

Family

ID=26587451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000196861A Expired - Fee Related JP4305707B2 (ja) 2000-03-14 2000-06-29 基板の製造方法および半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4305707B2 (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8138002B2 (en) 2008-08-21 2012-03-20 Sony Corporation Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing

Also Published As

Publication number Publication date
JP2001332530A (ja) 2001-11-30

Similar Documents

Publication Publication Date Title
EP0450255B1 (en) Process for forming the ridge structure of a self-aligned semiconductor laser
US6319742B1 (en) Method of forming nitride based semiconductor layer
JP3060973B2 (ja) 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ
JP4274504B2 (ja) 半導体薄膜構造体
JP4040192B2 (ja) 半導体発光素子の製造方法
JPS6050983A (ja) 半導体レ−ザ素子の製造方法
JP3863962B2 (ja) 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
JP2007088503A (ja) 半導体発光素子
US20040147134A1 (en) Method for manufacturing semiconductor laser optical device
JPH05259574A (ja) 半導体レーザ装置及びその製造方法
JP2863677B2 (ja) 半導体レーザ及びその製造方法
JP4305707B2 (ja) 基板の製造方法および半導体装置の製造方法
KR20000035669A (ko) 반도체 레이저, 반도체 장치 및 이들의 제조 방법
JP3424634B2 (ja) 窒化物半導体レーザ素子
JP3894978B2 (ja) 導波路型半導体レーザ素子の製造方法
JP3108183B2 (ja) 半導体レーザ素子とその製造方法
JP3523432B2 (ja) 半導体レーザ装置の製造方法
JP4350227B2 (ja) 半導体結晶成長方法
JP3689733B2 (ja) 半導体素子の製造方法
JP2002075958A (ja) 構造基板および半導体装置並びにそれらの製造方法
JPH07312462A (ja) 面発光レーザダイオードの製造方法，及び面発光レーザダイオード
JPH05145170A (ja) 面発光レーザ
JP3022351B2 (ja) 光半導体装置及びその製造方法
JP2525617B2 (ja) 半導体レ−ザの製造方法
JP2008028093A (ja) 半導体レーザ装置およびその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080916

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081117

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081210

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090209

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090216

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090409

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090422

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120515

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130515

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees