JP4303749B2 - 高開口率液晶表示素子の有機絶縁膜用ネガレジスト組成物 - Google Patents

高開口率液晶表示素子の有機絶縁膜用ネガレジスト組成物 Download PDF

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JP4303749B2
JP4303749B2 JP2006507829A JP2006507829A JP4303749B2 JP 4303749 B2 JP4303749 B2 JP 4303749B2 JP 2006507829 A JP2006507829 A JP 2006507829A JP 2006507829 A JP2006507829 A JP 2006507829A JP 4303749 B2 JP4303749 B2 JP 4303749B2
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acrylate
meth
group
insulating film
methyl
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JP2006525549A (ja
Inventor
ヨン−クン キム
スク−ヨン チェ
ヒョク−ジン チャ
ジェ−ファン リー
ケン ジョー リー
ミ−スン リュウ
ユ−リー ぺ
ヒュン−ジン ソー
スン−ウー ウー
ジェ−スン ウー
クウォン−イル ヨー
ス−ヒュン リー
ヨン−マン チョン
ブム−ヨン チョイ
チョル ハン
ウーン キム
ナク−チル ジュン
ソン−ジェ ホン
ミン−ジ キム
ヨン−ソー チョイ
サン−ヒュプ ジュン
ジェ−ロク チョイ
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株式会社三養イエムエス
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
JP2006507829A 2003-04-30 2004-04-29 高開口率液晶表示素子の有機絶縁膜用ネガレジスト組成物 Expired - Lifetime JP4303749B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030027860A KR100684365B1 (ko) 2003-04-30 2003-04-30 음성 레지스트 조성물을 이용한 고개구율 박막 트랜지스터(tft) 액정표시소자의 유기절연막 형성방법
PCT/KR2004/000992 WO2004097522A1 (en) 2003-04-30 2004-04-29 Negative resist composition for organic insulator of high aperture lcd

Publications (2)

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JP2006525549A JP2006525549A (ja) 2006-11-09
JP4303749B2 true JP4303749B2 (ja) 2009-07-29

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JP2006507829A Expired - Lifetime JP4303749B2 (ja) 2003-04-30 2004-04-29 高開口率液晶表示素子の有機絶縁膜用ネガレジスト組成物

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Country Link
JP (1) JP4303749B2 (zh)
KR (1) KR100684365B1 (zh)
CN (1) CN100538517C (zh)
WO (1) WO2004097522A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005338831A (ja) * 2004-05-25 2005-12-08 Samsung Electronics Co Ltd 液晶表示装置の有機膜フォトレジスト組成物、そのスピンレスコーティング方法、これを用いた有機膜パターン形成方法及びこれにより製造された液晶表示装置
US20050279995A1 (en) 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
JP4934353B2 (ja) * 2005-06-10 2012-05-16 ドンジン セミケム カンパニー リミテッド ネガティブ感光性樹脂組成物
KR100731325B1 (ko) * 2005-06-23 2007-06-25 주식회사 삼양이엠에스 음성 레지스트 조성물
KR100731327B1 (ko) * 2005-12-22 2007-06-25 주식회사 삼양이엠에스 음성 포토레지스트 조성물
KR101348757B1 (ko) * 2006-02-03 2014-01-07 주식회사 동진쎄미켐 유기 절연막용 수지 조성물 및 그 제조 방법, 상기 수지조성물을 포함하는 표시판
KR101430533B1 (ko) 2008-01-04 2014-08-22 솔브레인 주식회사 네거티브 포토레지스트 조성물 및 이를 이용한 어레이기판의 제조 방법
KR101099691B1 (ko) * 2008-04-07 2011-12-28 주식회사 삼양이엠에스 음성 레지스트 조성물
JP5849059B2 (ja) * 2012-07-06 2016-01-27 富士フイルム株式会社 タッチパネル用導電性フィルムおよびタッチパネル
CN106298797B (zh) * 2015-05-21 2019-06-18 鸿富锦精密工业（深圳）有限公司 阵列基板的制作方法以及通过该方法制得的阵列基板
TWI810881B (zh) * 2022-04-08 2023-08-01 新應材股份有限公司 感光性樹脂組成物以及硬化物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950011163B1 (ko) * 1992-11-26 1995-09-28 제일합섬주식회사 액정디스플레이용 칼라레지스트(colorresist)의 제조방법
KR970002980B1 (ko) * 1993-12-10 1997-03-13 제일합섬 주식회사 칼라 액정 디스프레이용 레지스트 조성물 및 이를 이용한 색필터층 제조방법
KR100377859B1 (ko) * 1998-08-18 2003-10-04 주식회사 엘지화학 표면특성을조절하는새로운공중합체및이를이용한감광성수지조성물
KR100398746B1 (ko) * 1998-08-18 2004-05-24 주식회사 엘지화학 저분자실리콘화합물을포함하는칼라필터용포토레지스트조성물및그제조방법
KR100515750B1 (ko) * 1998-08-18 2006-01-12 주식회사 엘지화학 새로운공중합수지를이용한칼라필터포토레지스트조성물

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Publication number Publication date
JP2006525549A (ja) 2006-11-09
WO2004097522A1 (en) 2004-11-11
CN100538517C (zh) 2009-09-09
KR100684365B1 (ko) 2007-02-20
KR20040093972A (ko) 2004-11-09
CN1781057A (zh) 2006-05-31

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