JP4283741B2 - 樹脂モールド型モジュールとその製造方法 - Google Patents
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- JP4283741B2 JP4283741B2 JP2004216801A JP2004216801A JP4283741B2 JP 4283741 B2 JP4283741 B2 JP 4283741B2 JP 2004216801 A JP2004216801 A JP 2004216801A JP 2004216801 A JP2004216801 A JP 2004216801A JP 4283741 B2 JP4283741 B2 JP 4283741B2
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- 229920005989 resin Polymers 0.000 title claims description 82
- 239000011347 resin Substances 0.000 title claims description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004020 conductor Substances 0.000 claims description 156
- 239000003566 sealing material Substances 0.000 claims description 70
- 239000003990 capacitor Substances 0.000 claims description 68
- 239000011810 insulating material Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 34
- 239000011344 liquid material Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 17
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000004962 Polyamide-imide Substances 0.000 claims description 13
- 229920002312 polyamide-imide Polymers 0.000 claims description 13
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 12
- 239000011256 inorganic filler Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000002923 metal particle Substances 0.000 claims description 4
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 229920005992 thermoplastic resin Polymers 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 230000009974 thixotropic effect Effects 0.000 claims description 2
- 239000003921 oil Substances 0.000 description 47
- 229910052715 tantalum Inorganic materials 0.000 description 47
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 47
- 238000002474 experimental method Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000003822 epoxy resin Substances 0.000 description 21
- 229920000647 polyepoxide Polymers 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 19
- 230000000694 effects Effects 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 238000001723 curing Methods 0.000 description 13
- 238000000465 moulding Methods 0.000 description 12
- 238000001721 transfer moulding Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 239000000945 filler Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 7
- 230000007774 longterm Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000010705 motor oil Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 6
- 229920006259 thermoplastic polyimide Polymers 0.000 description 6
- 150000003568 thioethers Chemical class 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- -1 etc. Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 241000531908 Aramides Species 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- ZMAMKNPVAMKIIC-UHFFFAOYSA-N (5-benzyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC=1N=C(C=2C=CC=CC=2)NC=1CC1=CC=CC=C1 ZMAMKNPVAMKIIC-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- LMWMTSCFTPQVCJ-UHFFFAOYSA-N 2-methylphenol;phenol Chemical compound OC1=CC=CC=C1.CC1=CC=CC=C1O LMWMTSCFTPQVCJ-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- BEVHTMLFDWFAQF-UHFFFAOYSA-N butyl(triphenyl)phosphanium Chemical compound C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 BEVHTMLFDWFAQF-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical class C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
少なくとも前記接続部の外周面が前記封止材及び前記導電性材料よりも低弾性率を有する絶縁性材料で被覆されており、
前記配線基板の電極が前記電子部品より外側にはみ出ており、且つ、前記両端部を横切って前記電子部品の厚さ方向に切断した前記導電性材料の断面形状が前記接続部の外周面側に凸型形状に形成されており、好ましくは前記配線基板の電極及び電子部品の電極は前記導電性材料により覆われて一体に接続されていることを特徴とする樹脂モールド型モジュールにある。
前記配線基板の電極を前記電子部品より外側にはみ出して形成し、且つ、前記両端部を横切って前記電子部品の厚さ方向に切断した前記導電性材料の断面形状が前記接続部の外周面側に凸型形状になるように形成することを特徴とする樹脂モールド型モジュールの製造方法にある。
[実験例1]
[実験例2]
[実験例3]
[実験例4]
[実施例1]
[実施例2]
[実験例5]
[実施例3]
[実施例4]
Claims (14)
- 配線基板に形成された電極と電子部品の左右両端部の側面から底面にかけて形成された電極とが導電性材料により一体に接続された接続部を有し、前記配線基板及び電子部品が樹脂による封止材よってモールドされている樹脂モールド型モジュールにおいて、
少なくとも前記接続部の外周面が前記封止材及び前記導電性材料よりも低弾性率を有する絶縁性材料で被覆されており、
前記配線基板の電極が前記電子部品より外側にはみ出ており、且つ、前記両端部を横切って前記電子部品の厚さ方向に切断した前記導電性材料の断面形状が前記接続部の外周面側に凸型形状に形成されていることを特徴とする樹脂モールド型モジュール。 - 請求項1において、前記絶縁性材料は、少なくとも前記配線基板の電極と電子部品の電極との間の前記導電性材料による未接続部を覆っていることを特徴とする樹脂モールド型モジュール。
- 請求項1又は2において、前記絶縁性材料は、前記電子部品とその前記配線基板の搭載面の全体を覆っていることを特徴とする樹脂モールド型モジュール。
- 請求項1〜3のいずれかにおいて、前記電子部品は、その端部側面から底面の一部に掛けて形成された前記電極を有することを特徴とする樹脂モールド型モジュール。
- 請求項4において、前記電子部品はTaコンデンサ及びチップコンデンサの少なくとも一方であることを特徴とする樹脂モールド型モジュール。
- 請求項1〜5のいずれかにおいて、前記導電性材料は、半田又は導電性ペーストからなることを特徴とする樹脂モールド型モジュール。
- 請求項1〜6のいずれかにおいて、前記封止材と前記配線基板の熱膨張率の差は、前記電子部品と前記配線基板の熱膨張率の差より小さいことを特徴とする樹脂モールド型モジュール。
- 請求項1〜7のいずれかにおいて、前記配線基板は、セラミック多層配線基板よりなることを特徴とする樹脂モールド型モジュール。
- 請求項1〜8のいずれかにおいて、前記導電性材料は、銀を主成分とする金属粒子を分散した接着性を有する樹脂材料からなることを特徴とする樹脂モールド型モジュール。
- 請求項1〜9のいずれかにおいて、前記封止材は、50体積%以上の無機充填材料を含有する樹脂材料からなることを特徴とする樹脂モールド型モジュール。
- 配線基板に形成された電極と電子部品の左右両端部の側面から底面にかけて形成された電極とが導電性材料により一体に接続して接続部を形成した後、少なくとも前記接続部の外周面を液状の絶縁材料によって被覆後加熱硬化し、次いで前記配線基板及び電子部品を樹脂によって封止する工程を有し、前記硬化後の絶縁材料が前記封止材及び導電性材料よりも低弾性率を有し、
前記配線基板の電極を前記電子部品より外側にはみ出して形成し、且つ、前記両端部を横切って前記電子部品の厚さ方向に切断した前記導電性材料の断面形状が前記接続部の外周面側に凸型形状になるように形成することを特徴とする樹脂モールド型モジュールの製造方法。 - 請求項11において、前記絶縁材料は、チクソ性1.2以上及び粘度400Pa・s以下の液状であり、前記絶縁材料をディスペンサーによって滴下した後、前記加熱硬化することを特徴とする樹脂モールド型モジュールの製造方法。
- 請求項11又は12において、前記絶縁性材料によって前記電子部品とその搭載された前記配線基板面の全体を覆うことを特徴とする樹脂モールド型モジュールの製造方法。
- 請求項11において、前記絶縁性材料は、ポリイミド、ポリエーテルイミド、ポリアミドイミド、ポリアミドのいずれかである熱可塑性樹脂を有機溶剤に溶かした液状材料であることを特徴とする樹脂モールド型モジュールの製造方法。
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