JP4256114B2 - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ Download PDF

Info

Publication number
JP4256114B2
JP4256114B2 JP2002153037A JP2002153037A JP4256114B2 JP 4256114 B2 JP4256114 B2 JP 4256114B2 JP 2002153037 A JP2002153037 A JP 2002153037A JP 2002153037 A JP2002153037 A JP 2002153037A JP 4256114 B2 JP4256114 B2 JP 4256114B2
Authority
JP
Japan
Prior art keywords
read
write
column
selection switch
tmr elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002153037A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003249629A (ja
JP2003249629A5 (enrdf_load_stackoverflow
Inventor
佳久 岩田
知輝 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002153037A priority Critical patent/JP4256114B2/ja
Publication of JP2003249629A publication Critical patent/JP2003249629A/ja
Publication of JP2003249629A5 publication Critical patent/JP2003249629A5/ja
Application granted granted Critical
Publication of JP4256114B2 publication Critical patent/JP4256114B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002153037A 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ Expired - Fee Related JP4256114B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001390518 2001-12-21
JP2001-390518 2001-12-21
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Publications (3)

Publication Number Publication Date
JP2003249629A JP2003249629A (ja) 2003-09-05
JP2003249629A5 JP2003249629A5 (enrdf_load_stackoverflow) 2005-10-06
JP4256114B2 true JP4256114B2 (ja) 2009-04-22

Family

ID=28677029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002153037A Expired - Fee Related JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Country Status (1)

Country Link
JP (1) JP4256114B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4819316B2 (ja) 2004-02-23 2011-11-24 ルネサスエレクトロニクス株式会社 半導体装置
JP2006031795A (ja) 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP3913258B2 (ja) 2005-06-30 2007-05-09 シャープ株式会社 半導体記憶装置
JP2009054788A (ja) * 2007-08-27 2009-03-12 Renesas Technology Corp 半導体装置
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
US9824738B2 (en) 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device
CN111192614B (zh) * 2019-12-30 2023-11-07 上海集成电路研发中心有限公司 一种存储器阵列结构

Also Published As

Publication number Publication date
JP2003249629A (ja) 2003-09-05

Similar Documents

Publication Publication Date Title
KR100512509B1 (ko) 자기 랜덤 액세스 메모리 및 그 제조 방법
KR100509774B1 (ko) 자기 랜덤 액세스 메모리, 그 판독 방법 및 그 제조 방법
KR100518291B1 (ko) 자기 랜덤 액세스 메모리
JP4780878B2 (ja) 薄膜磁性体記憶装置
US6839269B2 (en) Magnetic random access memory
CN100367404C (zh) 薄膜磁性体存储器
KR101291925B1 (ko) 반도체 장치
JP5846124B2 (ja) 半導体記憶装置
JP3906212B2 (ja) 磁気ランダムアクセスメモリ
KR100598762B1 (ko) 자기 랜덤 액세스 메모리의 데이터 판독 방법
JP7291410B2 (ja) 磁気メモリ装置
JP4256114B2 (ja) 磁気ランダムアクセスメモリ
US7471549B2 (en) Semiconductor memory device
JP3887272B2 (ja) 磁気ランダムアクセスメモリの読み出し方法
JP3971323B2 (ja) 磁気ランダムアクセスメモリ
JP5147972B2 (ja) 薄膜磁性体記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080424

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080704

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090127

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090129

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130206

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees