JP2003249629A5 - - Google Patents

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Publication number
JP2003249629A5
JP2003249629A5 JP2002153037A JP2002153037A JP2003249629A5 JP 2003249629 A5 JP2003249629 A5 JP 2003249629A5 JP 2002153037 A JP2002153037 A JP 2002153037A JP 2002153037 A JP2002153037 A JP 2002153037A JP 2003249629 A5 JP2003249629 A5 JP 2003249629A5
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JP
Japan
Prior art keywords
memory cells
random access
magnetic random
access memory
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002153037A
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English (en)
Japanese (ja)
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JP4256114B2 (ja
JP2003249629A (ja
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Application filed filed Critical
Priority to JP2002153037A priority Critical patent/JP4256114B2/ja
Priority claimed from JP2002153037A external-priority patent/JP4256114B2/ja
Publication of JP2003249629A publication Critical patent/JP2003249629A/ja
Publication of JP2003249629A5 publication Critical patent/JP2003249629A5/ja
Application granted granted Critical
Publication of JP4256114B2 publication Critical patent/JP4256114B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002153037A 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ Expired - Fee Related JP4256114B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001390518 2001-12-21
JP2001-390518 2001-12-21
JP2002153037A JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Publications (3)

Publication Number Publication Date
JP2003249629A JP2003249629A (ja) 2003-09-05
JP2003249629A5 true JP2003249629A5 (enrdf_load_stackoverflow) 2005-10-06
JP4256114B2 JP4256114B2 (ja) 2009-04-22

Family

ID=28677029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002153037A Expired - Fee Related JP4256114B2 (ja) 2001-12-21 2002-05-27 磁気ランダムアクセスメモリ

Country Status (1)

Country Link
JP (1) JP4256114B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4819316B2 (ja) 2004-02-23 2011-11-24 ルネサスエレクトロニクス株式会社 半導体装置
JP2006031795A (ja) 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP3913258B2 (ja) 2005-06-30 2007-05-09 シャープ株式会社 半導体記憶装置
JP2009054788A (ja) * 2007-08-27 2009-03-12 Renesas Technology Corp 半導体装置
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
US9824738B2 (en) 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device
CN111192614B (zh) * 2019-12-30 2023-11-07 上海集成电路研发中心有限公司 一种存储器阵列结构

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