JP2003249629A5 - - Google Patents

Claims (5)

A plurality of memory cells using a magnetoresistive effect disposed in a first direction parallel to the surface of the semiconductor substrate on a semiconductor substrate; a read selection switch commonly connected to one end of the plurality of memory cells; A plurality of bit lines provided corresponding to a plurality of memory cells, extending in a second direction intersecting the first direction and functioning as a read line and a write line, and provided in common to the plurality of memory cells; A magnetic random access memory comprising: a write line extending in a first direction , wherein each of the plurality of memory cells has its other end connected independently to one of the plurality of bit lines. 2. The magnetic random access memory according to claim 1, further comprising a source line connected to one end of the plurality of memory cells via the read selection switch, and at the time of reading, the plurality of bit lines and the source line, A magnetic random access memory characterized in that a bias current flows between them. The magnetic random access memory according to claim 1, wherein the plurality of memory cells constitute a read block, and data of the plurality of memory cells are read simultaneously. 2. The magnetic random access memory according to claim 1, further comprising: a read circuit for reading data of the plurality of memory cells; connected between one end of the plurality of bit lines and the read circuit; A magnetic random access memory comprising: a driver for causing a write current to flow through a selected bit line of the bit lines. 2. The magnetic random access memory according to claim 1, further comprising: a common electrode connected in common to one end of the plurality of memory cells and disposed on the plurality of memory cells. memory.