JP4255639B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4255639B2
JP4255639B2 JP2002010398A JP2002010398A JP4255639B2 JP 4255639 B2 JP4255639 B2 JP 4255639B2 JP 2002010398 A JP2002010398 A JP 2002010398A JP 2002010398 A JP2002010398 A JP 2002010398A JP 4255639 B2 JP4255639 B2 JP 4255639B2
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film
laser
substrate
light
region
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Japanese (ja)
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JP2002305209A5 (enExample
JP2002305209A (ja
Inventor
舜平 山崎
智史 村上
英人 大沼
理 中村
幸一郎 田中
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002010398A 2001-01-18 2002-01-18 半導体装置の作製方法 Expired - Fee Related JP4255639B2 (ja)

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JP2002010398A JP4255639B2 (ja) 2001-01-18 2002-01-18 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2001010858 2001-01-18
JP2001-10858 2001-01-18
JP2002010398A JP4255639B2 (ja) 2001-01-18 2002-01-18 半導体装置の作製方法

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JP2002305209A JP2002305209A (ja) 2002-10-18
JP2002305209A5 JP2002305209A5 (enExample) 2005-08-04
JP4255639B2 true JP4255639B2 (ja) 2009-04-15

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JP2002010398A Expired - Fee Related JP4255639B2 (ja) 2001-01-18 2002-01-18 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7973313B2 (en) * 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
KR101688074B1 (ko) 2010-01-27 2016-12-21 삼성디스플레이 주식회사 표시기판 및 이의 제조방법
JP2012038843A (ja) * 2010-08-05 2012-02-23 Tohoku Univ 半導体薄膜の製造方法、半導体デバイスおよび半導体薄膜製造装置

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