JP4255442B2 - ワイヤ・ボンド・インダクタを有する半導体装置および方法 - Google Patents
ワイヤ・ボンド・インダクタを有する半導体装置および方法 Download PDFInfo
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- JP4255442B2 JP4255442B2 JP2004535363A JP2004535363A JP4255442B2 JP 4255442 B2 JP4255442 B2 JP 4255442B2 JP 2004535363 A JP2004535363 A JP 2004535363A JP 2004535363 A JP2004535363 A JP 2004535363A JP 4255442 B2 JP4255442 B2 JP 4255442B2
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- bonding
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- 238000000034 method Methods 0.000 title claims description 11
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Description
Claims (12)
- 半導体ダイと、
前記半導体ダイの上部表面に接合され、かつ、絶縁コアを画定するためにボンディング・ワイヤの高さよりも横方向の距離が長い第1ボンディング・ワイヤを含むインダクタと、から構成され、
前記第1ボンディング・ワイヤは、前記上部表面上の第1および第2ボンディング・パッドにそれぞれ接合された第1および第2の終端を有し、かつ前記第1ボンディング・ワイヤは、前記第1および第2ボンディング・パッドから伸長し、前記上部表面のエッジの上方に張り出す、
ことを特徴とする半導体装置。 - 前記第1ボンディング・ワイヤは、前記絶縁コアを取り巻くコイルで形成されることを特徴とする請求項1記載の半導体装置。
- 前記コイルは、複数の巻数を有して形成されることを特徴とする請求項2記載の半導体装置。
- 前記半導体ダイおよび前記インダクタを収容するための半導体パッケージをさらに含むことを特徴とする請求項1記載の半導体装置。
- 前記半導体ダイの第3ボンディング・パッドと前記半導体パッケージのリードとの間に接合された第2ボンディング・ワイヤをさらに含むことを特徴とする請求項4記載の半導体装置。
- 前記半導体パッケージは、前記絶縁コアを提供し、かつ、前記コイルの位置を維持するための封止剤を含むことを特徴とする請求項4記載の半導体装置。
- 前記第1ボンディング・ワイヤはインダクタンスを提供し、かつ、前記半導体ダイは前記インダクタンスによって決定された周波数で動作するために構成された発振器を含むことを特徴とする請求項1記載の半導体装置。
- 前記ボンディング・ワイヤは、円形の断面を有することを特徴とする請求項1記載の半導体装置。
- 表面を有する半導体ダイと、
前記半導体ダイに電気的に結合され、かつ、誘電性コアを囲むコイル内に形成された第1部分を有するボンディング・ワイヤと、から構成され、
前記ボンディング・ワイヤは、前記表面上の第1および第2ボンディング・パッドにそれぞれ接合された第1および第2の終端を有し、かつ前記ボンディング・ワイヤは、前記第1および第2ボンディング・パッドから伸長し、前記半導体ダイのエッジの上方に張り出す、
ことを特徴とする半導体装置。 - 前記ボンディング・ワイヤは、ラインを定義する前記第1および第2ボンディング・パッドに接合され、かつ、前記誘電性コアの軸は、前記ラインと平行であることを特徴とする請求項9記載の半導体装置。
- 前記軸は、前記エッジと平行であることを特徴とする請求項10記載の半導体装置。
- 集積回路を動作する方法であって、
表面、エッジ、および、誘電性コアを囲むコイル内に形成されたボンディング・ワイヤを有する半導体ダイを提供する段階であって、前記ボンディング・ワイヤは、前記表面上の第1および第2ボンディング・パッドにそれぞれ接合された第1および第2の終端を有し、かつ前記ボンディング・ワイヤは、前記第1および第2ボンディング・パッドから伸長し、前記エッジの上方に張り出す、段階と、
前記半導体ダイ上で電流を発生させる段階と、
前記電流をボンディング・ワイヤを通して流し、誘電性コア内に磁束を生成する段階と、
から構成されることを特徴とする方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/US2002/028883 WO2004025695A2 (en) | 2002-09-10 | 2002-09-10 | Semiconductor device with wire bond inductor and method |
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JP4255442B2 true JP4255442B2 (ja) | 2009-04-15 |
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CN (1) | CN100423255C (ja) |
AU (1) | AU2002368201A1 (ja) |
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US7227240B2 (en) * | 2002-09-10 | 2007-06-05 | Semiconductor Components Industries, L.L.C. | Semiconductor device with wire bond inductor and method |
US7489022B2 (en) | 2005-08-02 | 2009-02-10 | Viasat, Inc. | Radio frequency over-molded leadframe package |
US7586193B2 (en) | 2005-10-07 | 2009-09-08 | Nhew R&D Pty Ltd | Mm-wave antenna using conventional IC packaging |
JP4990903B2 (ja) * | 2005-10-19 | 2012-08-01 | エヌエックスピー ビー ヴィ | 接続部に結合された電極を有する素子を備える装置 |
KR100704996B1 (ko) | 2006-04-18 | 2007-04-09 | 인티그런트 테크놀로지즈(주) | 집적회로 칩 및 패키지 |
JP2009158839A (ja) * | 2007-12-27 | 2009-07-16 | Sharp Corp | 半導体パッケージ、半導体装置、およびワイヤボンディング方法 |
JP2010118471A (ja) * | 2008-11-12 | 2010-05-27 | Panasonic Corp | 半導体装置 |
US8107254B2 (en) | 2008-11-20 | 2012-01-31 | International Business Machines Corporation | Integrating capacitors into vias of printed circuit boards |
US8164158B2 (en) * | 2009-09-11 | 2012-04-24 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device |
US8242384B2 (en) | 2009-09-30 | 2012-08-14 | International Business Machines Corporation | Through hole-vias in multi-layer printed circuit boards |
US8432027B2 (en) | 2009-11-11 | 2013-04-30 | International Business Machines Corporation | Integrated circuit die stacks with rotationally symmetric vias |
US8258619B2 (en) | 2009-11-12 | 2012-09-04 | International Business Machines Corporation | Integrated circuit die stacks with translationally compatible vias |
US8315068B2 (en) | 2009-11-12 | 2012-11-20 | International Business Machines Corporation | Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same |
US8310841B2 (en) | 2009-11-12 | 2012-11-13 | International Business Machines Corporation | Integrated circuit die stacks having initially identical dies personalized with switches and methods of making the same |
US9646947B2 (en) | 2009-12-22 | 2017-05-09 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Integrated circuit with inductive bond wires |
CN101840906B (zh) * | 2010-04-14 | 2011-08-17 | 锐迪科科技有限公司 | 高q值芯片集成电感 |
US9159777B2 (en) * | 2011-04-15 | 2015-10-13 | Infineon Technologies Ag | Die arrangements containing an inductor coil and methods of manufacturing a die arrangement containing an inductor coil |
US9692386B2 (en) * | 2013-12-23 | 2017-06-27 | Qualcomm Incorporated | Three-dimensional wire bond inductor |
CN105374764A (zh) * | 2014-08-29 | 2016-03-02 | 展讯通信(上海)有限公司 | 一种集成电感的封装结构 |
EP3198638A4 (en) * | 2014-09-22 | 2018-05-30 | Mc10, Inc. | Methods and apparatuses for shaping and looping bonding wires that serve as stretchable and bendable interconnects |
US10290412B2 (en) | 2015-06-25 | 2019-05-14 | Intel IP Corporation | Vertical inductor for WLCSP |
US10181435B2 (en) * | 2015-11-02 | 2019-01-15 | Texas Instruments Incorporated | Lead frame assembly |
US11715722B2 (en) * | 2020-04-30 | 2023-08-01 | Wolfspeed, Inc. | Wirebond-constructed inductors |
CN116864494B (zh) * | 2023-09-01 | 2023-12-05 | 甬矽电子(宁波)股份有限公司 | 扇出型封装结构和扇出型封装结构制作方法 |
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GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
JPH06140451A (ja) * | 1992-10-27 | 1994-05-20 | Hitachi Ltd | 半導体集積回路装置 |
JPH10289921A (ja) * | 1997-04-14 | 1998-10-27 | Matsushita Electric Ind Co Ltd | 半導体装置 |
KR100530871B1 (ko) * | 1998-08-14 | 2006-06-16 | 이해영 | 본딩와이어인덕터와그것을이용한본딩와이어인덕터배열구조,칩인덕터,커플러및변압기 |
JP2002164214A (ja) * | 2000-10-27 | 2002-06-07 | Xerox Corp | ボンディングワイヤを使用する非同一面マイクロコイル及びその製造方法 |
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- 2002-09-10 WO PCT/US2002/028883 patent/WO2004025695A2/en active Search and Examination
- 2002-09-10 CN CNB028295935A patent/CN100423255C/zh not_active Expired - Fee Related
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CN100423255C (zh) | 2008-10-01 |
AU2002368201A8 (en) | 2004-04-30 |
AU2002368201A1 (en) | 2004-04-30 |
WO2004025695A2 (en) | 2004-03-25 |
JP2005538560A (ja) | 2005-12-15 |
WO2004025695A3 (en) | 2004-06-17 |
HK1081326A1 (en) | 2006-05-12 |
CN1669139A (zh) | 2005-09-14 |
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