JP4254373B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

Info

Publication number
JP4254373B2
JP4254373B2 JP2003179030A JP2003179030A JP4254373B2 JP 4254373 B2 JP4254373 B2 JP 4254373B2 JP 2003179030 A JP2003179030 A JP 2003179030A JP 2003179030 A JP2003179030 A JP 2003179030A JP 4254373 B2 JP4254373 B2 JP 4254373B2
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
well
active
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003179030A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003347681A5 (enExample
JP2003347681A (ja
Inventor
慎一 長濱
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003179030A priority Critical patent/JP4254373B2/ja
Publication of JP2003347681A publication Critical patent/JP2003347681A/ja
Publication of JP2003347681A5 publication Critical patent/JP2003347681A5/ja
Application granted granted Critical
Publication of JP4254373B2 publication Critical patent/JP4254373B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2003179030A 2003-06-24 2003-06-24 窒化物半導体素子 Expired - Fee Related JP4254373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003179030A JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003179030A JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9713498A Division JPH11298090A (ja) 1998-04-09 1998-04-09 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003347681A JP2003347681A (ja) 2003-12-05
JP2003347681A5 JP2003347681A5 (enExample) 2005-09-22
JP4254373B2 true JP4254373B2 (ja) 2009-04-15

Family

ID=29774862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003179030A Expired - Fee Related JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP4254373B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596798B (zh) * 2012-01-03 2017-08-21 Ｌｇ伊諾特股份有限公司 發光裝置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4365255B2 (ja) * 2004-04-08 2009-11-18 浜松ホトニクス株式会社 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
JP2007250991A (ja) * 2006-03-17 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596798B (zh) * 2012-01-03 2017-08-21 Ｌｇ伊諾特股份有限公司 發光裝置

Also Published As

Publication number Publication date
JP2003347681A (ja) 2003-12-05

Similar Documents

Publication Publication Date Title
JP3468082B2 (ja) 窒化物半導体素子
KR101698629B1 (ko) 질화물 반도체 레이저 다이오드
JP3835384B2 (ja) 窒化物半導体素子
JP4328366B2 (ja) 半導体素子
JP4075324B2 (ja) 窒化物半導体素子
JP4441563B2 (ja) 窒化物半導体レーザ素子
JP3744211B2 (ja) 窒化物半導体素子
JPH11298090A (ja) 窒化物半導体素子
JP2003115642A (ja) 窒化物半導体素子
WO2002080320A1 (fr) Element semi-conducteur a base de nitrure
JPH08228025A (ja) 窒化物半導体発光素子
JP3835225B2 (ja) 窒化物半導体発光素子
JP4401610B2 (ja) 窒化物半導体レーザ素子
JP2000196143A (ja) 半導体発光素子
JP3620292B2 (ja) 窒化物半導体素子
KR100625835B1 (ko) 질화물반도체소자
JP3951973B2 (ja) 窒化物半導体素子
JP4342134B2 (ja) 窒化物半導体レーザ素子
JP4254373B2 (ja) 窒化物半導体素子
KR100511530B1 (ko) 질화물반도체소자
JP2007214221A (ja) 窒化物半導体レーザ素子
JP3857417B2 (ja) 窒化物半導体素子
JP3657795B2 (ja) 発光素子
JP3867625B2 (ja) 窒化物半導体発光素子
JP4120698B2 (ja) 窒化物半導体レーザ素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050411

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080729

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080929

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090106

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090119

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120206

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130206

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130206

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees