JP2003347681A5 - - Google Patents

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Publication number
JP2003347681A5
JP2003347681A5 JP2003179030A JP2003179030A JP2003347681A5 JP 2003347681 A5 JP2003347681 A5 JP 2003347681A5 JP 2003179030 A JP2003179030 A JP 2003179030A JP 2003179030 A JP2003179030 A JP 2003179030A JP 2003347681 A5 JP2003347681 A5 JP 2003347681A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
semiconductor layer
active
active layer
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JP2003179030A
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English (en)
Japanese (ja)
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JP2003347681A (ja
JP4254373B2 (ja
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Priority to JP2003179030A priority Critical patent/JP4254373B2/ja
Priority claimed from JP2003179030A external-priority patent/JP4254373B2/ja
Publication of JP2003347681A publication Critical patent/JP2003347681A/ja
Publication of JP2003347681A5 publication Critical patent/JP2003347681A5/ja
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Publication of JP4254373B2 publication Critical patent/JP4254373B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003179030A 2003-06-24 2003-06-24 窒化物半導体素子 Expired - Fee Related JP4254373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003179030A JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003179030A JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9713498A Division JPH11298090A (ja) 1998-04-09 1998-04-09 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003347681A JP2003347681A (ja) 2003-12-05
JP2003347681A5 true JP2003347681A5 (enExample) 2005-09-22
JP4254373B2 JP4254373B2 (ja) 2009-04-15

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ID=29774862

Family Applications (1)

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JP2003179030A Expired - Fee Related JP4254373B2 (ja) 2003-06-24 2003-06-24 窒化物半導体素子

Country Status (1)

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JP (1) JP4254373B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4365255B2 (ja) * 2004-04-08 2009-11-18 浜松ホトニクス株式会社 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
JP2007250991A (ja) * 2006-03-17 2007-09-27 Nippon Telegr & Teleph Corp <Ntt> 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス
KR20130079873A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템

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