JP4253553B2 - 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置 - Google Patents

荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置 Download PDF

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Publication number
JP4253553B2
JP4253553B2 JP2003336691A JP2003336691A JP4253553B2 JP 4253553 B2 JP4253553 B2 JP 4253553B2 JP 2003336691 A JP2003336691 A JP 2003336691A JP 2003336691 A JP2003336691 A JP 2003336691A JP 4253553 B2 JP4253553 B2 JP 4253553B2
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Prior art keywords
charged particle
scanning
particle beam
sample
film
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JP2003336691A
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English (en)
Japanese (ja)
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JP2005108472A5 (enExample
JP2005108472A (ja
Inventor
宗行 福田
広康 志知
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2003336691A priority Critical patent/JP4253553B2/ja
Priority to US10/873,170 priority patent/US7242013B2/en
Publication of JP2005108472A publication Critical patent/JP2005108472A/ja
Publication of JP2005108472A5 publication Critical patent/JP2005108472A5/ja
Priority to US11/808,783 priority patent/US7453072B2/en
Priority to US12/289,667 priority patent/US7667212B2/en
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Publication of JP4253553B2 publication Critical patent/JP4253553B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2003336691A 2003-09-29 2003-09-29 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置 Expired - Fee Related JP4253553B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003336691A JP4253553B2 (ja) 2003-09-29 2003-09-29 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置
US10/873,170 US7242013B2 (en) 2003-09-29 2004-06-23 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor
US11/808,783 US7453072B2 (en) 2003-09-29 2007-06-13 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor
US12/289,667 US7667212B2 (en) 2003-09-29 2008-10-31 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003336691A JP4253553B2 (ja) 2003-09-29 2003-09-29 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置

Publications (3)

Publication Number Publication Date
JP2005108472A JP2005108472A (ja) 2005-04-21
JP2005108472A5 JP2005108472A5 (enExample) 2006-08-10
JP4253553B2 true JP4253553B2 (ja) 2009-04-15

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JP2003336691A Expired - Fee Related JP4253553B2 (ja) 2003-09-29 2003-09-29 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置

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US (3) US7242013B2 (enExample)
JP (1) JP4253553B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4253553B2 (ja) * 2003-09-29 2009-04-15 株式会社日立ハイテクノロジーズ 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置
JP2006313704A (ja) * 2005-05-09 2006-11-16 Jeol Ltd 集束イオンビーム装置
JP2006331847A (ja) * 2005-05-26 2006-12-07 Hitachi High-Technologies Corp イオンビーム加工・観察装置及び方法
JP4627682B2 (ja) * 2005-05-27 2011-02-09 株式会社日立ハイテクノロジーズ 試料作製装置および方法
JP4719554B2 (ja) * 2005-11-10 2011-07-06 株式会社日立ハイテクノロジーズ 集束イオンビーム装置
JP4889105B2 (ja) * 2006-08-23 2012-03-07 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置
JP2008157673A (ja) * 2006-12-21 2008-07-10 Sii Nanotechnology Inc 試料把持体の把持面作製方法
EP2199434A1 (en) * 2008-12-19 2010-06-23 FEI Company Method for forming microscopic structures on a substrate
US20120286151A1 (en) * 2011-05-11 2012-11-15 Waters Technologies Corporation Devices and Methods for Analyzing Surfaces
US20140053122A1 (en) * 2012-08-20 2014-02-20 National Chiao Tung University Method for adjusting a layout of an integrated circuit
JP6743466B2 (ja) * 2015-06-10 2020-08-19 株式会社リコー 薄膜導電体層の形成方法及び薄膜導電体層の焼結装置
JP6659281B2 (ja) * 2015-09-08 2020-03-04 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
GB2588932B (en) * 2019-11-15 2022-08-24 Dyson Technology Ltd Method and apparatus for sputter deposition of target material to a substrate
JP7586866B2 (ja) * 2022-08-29 2024-11-19 日本電子株式会社 集束イオンビーム装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289133A (ja) 1990-04-06 1991-12-19 Hitachi Ltd 集束ビームアシストデポジション装置
JPH0697084A (ja) 1992-09-16 1994-04-08 Hitachi Ltd ビーム誘起プロセス装置
US5357116A (en) * 1992-11-23 1994-10-18 Schlumberger Technologies, Inc. Focused ion beam processing with charge control
JP3388059B2 (ja) 1995-04-26 2003-03-17 株式会社日立製作所 半導体集積回路装置の製造方法
JP2981983B2 (ja) 1996-09-02 1999-11-22 セイコーインスツルメンツ株式会社 パターン膜修正装置
JP3289133B2 (ja) 1997-01-21 2002-06-04 独立行政法人産業技術総合研究所 吸気管燃料噴射圧縮着火エンジンにおける燃料の着火性改善方法
JP2000029201A (ja) 1998-07-15 2000-01-28 Dainippon Printing Co Ltd 位相シフトマスクの修正方法と位相シフトマスクの修正装置
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
JP2001007079A (ja) 1999-04-22 2001-01-12 Seiko Instruments Inc イオンビームを用いた加工方法
JP4906214B2 (ja) * 2000-03-10 2012-03-28 エフ イー アイ カンパニ 差分スパッタリング速度を減少する装置及び方法
JP4253553B2 (ja) * 2003-09-29 2009-04-15 株式会社日立ハイテクノロジーズ 荷電粒子線を用いた成膜方法と選択エッチング方法および荷電粒子線装置

Also Published As

Publication number Publication date
US7453072B2 (en) 2008-11-18
US20050066899A1 (en) 2005-03-31
US20090071605A1 (en) 2009-03-19
US20070252092A1 (en) 2007-11-01
US7242013B2 (en) 2007-07-10
US7667212B2 (en) 2010-02-23
JP2005108472A (ja) 2005-04-21

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