JP4253324B2 - 高周波電力増幅器モジュール - Google Patents
高周波電力増幅器モジュール Download PDFInfo
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- JP4253324B2 JP4253324B2 JP2005500728A JP2005500728A JP4253324B2 JP 4253324 B2 JP4253324 B2 JP 4253324B2 JP 2005500728 A JP2005500728 A JP 2005500728A JP 2005500728 A JP2005500728 A JP 2005500728A JP 4253324 B2 JP4253324 B2 JP 4253324B2
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- 239000010410 layer Substances 0.000 description 101
- 230000010355 oscillation Effects 0.000 description 23
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
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- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
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- 230000003321 amplification Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
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Description
本発明の高周波電力増幅器の第2の態様は、少なくとも第1、第2、第3の配線層、及び前記第2の配線層と第3の配線層との間に配置された第1のグランド層を含む基板と、前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第3の配線層に配置された第1の給電線路と、前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路とを具備している。
本発明の高周波電力増幅器の第4の態様は、第1、第2、第3の配線層と、前記第1の配線層と第2の配線層との間に配置された第1のグランド層と、前記第2の配線層と第3の配線層の相互間に配置された第2のグランド層とを含む基板と、前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第3の配線層に配置された第1の給電線路と、前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路とを具備している。
図2乃至図4Eは、第1の実施形態を示している。
図5乃至図6Eは、本発明の第2の実施形態を示している。第2の実施形態は、第1の実施形態より低い周波数帯、例えば900MHz帯のCDMA信号の電力増幅器に本発明を適用した場合を示している。第2の実施形態において、主な構成は第1の実施形態と同様である。しかし、周波数が第1の実施形態の半分以下である。このため、第1の実施形態と同じインピーダンスを実現するために、第1の実施形態の線路長より長くする必要がある。そのため、第1の実施形態のように、第1の配線層LY1としての最上層の領域だけでは、前段トランジスタQ1の給電線路ML1を形成することができない。
Claims (20)
- 少なくとも第1、第2の配線層、及び前記第1、第2の配線層の相互間に配置された少なくとも1つのグランド層を含む基板と、
前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、
前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、
前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第1の配線層に配置された第1の給電線路と、
前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路と
を具備する高周波電力増幅器。 - 前記少なくとも1つのグランド層は、その表面の殆どが導電膜により覆われている請求項1記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導き、前記第2の配線層に形成された第3の線路をさらに具備する請求項1記載の高周波電力増幅器。
- 前記第3の線路と前記第1のトランジスタの間に接続され、前記第1の配線層において、前記第1の線路から離れた位置に形成された入力整合回路をさらに具備する請求項3記載の高周波電力増幅器。
- 前記第2のトランジスタの出力端に接続され、前記第1の配線層において、前記第1の線路から離れた位置に形成された出力整合回路をさらに具備する請求項3記載の高周波電力増幅器。
- 少なくとも第1、第2、第3の配線層、及び前記第2の配線層と第3の配線層との間に配置された第1のグランド層を含む基板と、
前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、
前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、
前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第3の配線層に配置された第1の給電線路と、
前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路と
を具備することを特徴とする高周波電力増幅器。 - 前記少なくとも1つのグランド層は、その表面の殆どが導電膜により覆われている請求項6記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導き、前記第2の配線層に形成された第3の線路をさらに具備する請求項6記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導く前記第3の線路と前記第1のトランジスタの間に接続され、前記第1の配線層に形成された入力整合回路と、
前記第1の配線層と前記第2の配線層の間に配置された第2のグランド層と
をさらに具備する請求項6記載の高周波電力増幅器。 - 前記第2のトランジスタの出力端に接続され、前記第1の配線層に形成された出力整合回路と、
前記第1の配線層と前記第2の配線層の間に配置された第2のグランド層と
を具備する請求項6記載の高周波電力増幅器。 - 第1、第2の配線層、及び前記第1の配線層と第2の配線層との間に配置された第1のグランド層を含む基板と、
前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、
前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、
前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第1の配線層に配置される第1の給電線路と、
前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路と
を具備することを特徴とする高周波電力増幅器。 - 前記第1のグランド層は、その表面の殆どが導電膜により覆われている請求項11記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導き、前記第2の配線層に形成された第3の線路をさらに具備する請求項11記載の高周波電力増幅器。
- 前記第3の線路と前記第1のトランジスタの間に接続され、前記第1の配線層において、前記第1の線路から離れた位置に形成された入力整合回路をさらに具備する請求項13記載の高周波電力増幅器。
- 前記第2のトランジスタの出力端に接続され、前記第1の配線層において、前記第1の線路から離れた位置に形成された出力整合回路をさらに具備する請求項13記載の高周波電力増幅器。
- 第1、第2、第3の配線層と、前記第1の配線層と第2の配線層との間に配置された第1のグランド層と、前記第2の配線層と第3の配線層の相互間に配置された第2のグランド層とを含む基板と、
前記第1の配線層に配置され、供給された高周波信号を増幅する第1のトランジスタと、
前記第1の配線層に配置され、前記第1のトランジスタの出力信号を増幅する第2のトランジスタと、
前記第1のトランジスタの出力信号を出力する側に電源を供給し、前記第3の配線層に配置された第1の給電線路と、
前記第2のトランジスタの出力信号を出力する側に電源を供給し、前記第2の配線層に配置された第2の給電線路と
を具備することを特徴とする高周波電力増幅器。 - 前記第1、第2のグランド層は、その表面の殆どが導電膜により覆われている請求項16記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導き、前記第2の配線層に形成された第3の線路をさらに具備する請求項16記載の高周波電力増幅器。
- 前記第1のトランジスタに高周波信号を導く第3の線路と前記第1のトランジスタの間に接続され、前記第1の配線層に形成された入力整合回路をさらに具備する請求項16記載の高周波電力増幅器。
- 前記第2のトランジスタの出力端に接続され、前記第1の配線層に形成された出力整合回路をさらに具備する請求項16記載の高周波電力増幅器。
Applications Claiming Priority (1)
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PCT/JP2003/007355 WO2004112241A1 (en) | 2003-06-10 | 2003-06-10 | High-frequency power amplifier module |
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JP2006527508A JP2006527508A (ja) | 2006-11-30 |
JP4253324B2 true JP4253324B2 (ja) | 2009-04-08 |
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US (1) | US7088186B2 (ja) |
JP (1) | JP4253324B2 (ja) |
CN (1) | CN100421352C (ja) |
WO (1) | WO2004112241A1 (ja) |
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US7769355B2 (en) * | 2005-01-19 | 2010-08-03 | Micro Mobio Corporation | System-in-package wireless communication device comprising prepackaged power amplifier |
JP5865275B2 (ja) * | 2013-01-25 | 2016-02-17 | 株式会社東芝 | 高周波半導体スイッチ |
DE112018000380T5 (de) * | 2017-01-13 | 2019-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Speichervorrichtung, Halbleitervorrichtung, elektronisches Bauelement und elektronisches Gerät |
JP6914731B2 (ja) * | 2017-05-26 | 2021-08-04 | 京セラ株式会社 | 移動体および無線通信モジュール |
JP2019054216A (ja) * | 2017-09-19 | 2019-04-04 | 東芝メモリ株式会社 | 半導体装置 |
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JPH03278701A (ja) * | 1990-03-28 | 1991-12-10 | Tdk Corp | 高周波増幅器 |
JPH10197662A (ja) | 1996-12-28 | 1998-07-31 | Casio Comput Co Ltd | 受信装置 |
JP3668610B2 (ja) * | 1998-04-10 | 2005-07-06 | 太陽誘電株式会社 | 高周波電力増幅回路 |
US6172567B1 (en) * | 1998-08-31 | 2001-01-09 | Hitachi, Ltd. | Radio communication apparatus and radio frequency power amplifier |
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JP2002141756A (ja) | 2000-10-31 | 2002-05-17 | Kyocera Corp | 高周波部品 |
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CN100421352C (zh) | 2008-09-24 |
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CN1685607A (zh) | 2005-10-19 |
US7088186B2 (en) | 2006-08-08 |
JP2006527508A (ja) | 2006-11-30 |
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