JP4230753B2 - 半導体メモリ - Google Patents

半導体メモリ Download PDF

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Publication number
JP4230753B2
JP4230753B2 JP2002316720A JP2002316720A JP4230753B2 JP 4230753 B2 JP4230753 B2 JP 4230753B2 JP 2002316720 A JP2002316720 A JP 2002316720A JP 2002316720 A JP2002316720 A JP 2002316720A JP 4230753 B2 JP4230753 B2 JP 4230753B2
Authority
JP
Japan
Prior art keywords
cell array
memory cell
pass
chip
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002316720A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004152414A (ja
JP2004152414A5 (enExample
Inventor
寛 中村
俊雄 山村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002316720A priority Critical patent/JP4230753B2/ja
Priority to US10/694,861 priority patent/US7301834B2/en
Priority to KR10-2003-0075767A priority patent/KR100532652B1/ko
Publication of JP2004152414A publication Critical patent/JP2004152414A/ja
Publication of JP2004152414A5 publication Critical patent/JP2004152414A5/ja
Application granted granted Critical
Publication of JP4230753B2 publication Critical patent/JP4230753B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2002316720A 2002-10-30 2002-10-30 半導体メモリ Expired - Lifetime JP4230753B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002316720A JP4230753B2 (ja) 2002-10-30 2002-10-30 半導体メモリ
US10/694,861 US7301834B2 (en) 2002-10-30 2003-10-29 Semiconductor memory
KR10-2003-0075767A KR100532652B1 (ko) 2002-10-30 2003-10-29 반도체 메모리

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002316720A JP4230753B2 (ja) 2002-10-30 2002-10-30 半導体メモリ

Publications (3)

Publication Number Publication Date
JP2004152414A JP2004152414A (ja) 2004-05-27
JP2004152414A5 JP2004152414A5 (enExample) 2005-09-02
JP4230753B2 true JP4230753B2 (ja) 2009-02-25

Family

ID=32460341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002316720A Expired - Lifetime JP4230753B2 (ja) 2002-10-30 2002-10-30 半導体メモリ

Country Status (3)

Country Link
US (1) US7301834B2 (enExample)
JP (1) JP4230753B2 (enExample)
KR (1) KR100532652B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7283390B2 (en) * 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
JP2006164408A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ消去方法。
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
KR20240076117A (ko) * 2022-11-23 2024-05-30 에스케이하이닉스 주식회사 비휘발성 메모리 장치에 데이터를 프로그램 및 검증하기 위한 장치 및 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233799A (ja) * 1988-07-22 1990-02-02 Toshiba Corp 半導体記録装置のデコード方法およびその装置
JP3464271B2 (ja) 1994-04-12 2003-11-05 三菱電機株式会社 不揮発性半導体記憶装置
JP3350308B2 (ja) 1995-09-12 2002-11-25 株式会社東芝 不揮発性半導体記憶装置
KR100284916B1 (ko) * 1997-07-29 2001-03-15 니시무로 타이죠 반도체 기억 장치 및 그 기입 제어 방법
JPH11224492A (ja) 1997-11-06 1999-08-17 Toshiba Corp 半導体記憶装置、不揮発性半導体記憶装置及びフラッシュメモリ
JP3527157B2 (ja) 1999-11-26 2004-05-17 Ｎｅｃエレクトロニクス株式会社 不揮発性メモリを備えた半導体装置
JP2001167586A (ja) 1999-12-08 2001-06-22 Toshiba Corp 不揮発性半導体メモリ装置
US6907497B2 (en) * 2001-12-20 2005-06-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US6944063B2 (en) * 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts

Also Published As

Publication number Publication date
US7301834B2 (en) 2007-11-27
JP2004152414A (ja) 2004-05-27
KR20040038770A (ko) 2004-05-08
US20040136245A1 (en) 2004-07-15
KR100532652B1 (ko) 2005-12-01

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