JP4225749B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4225749B2
JP4225749B2 JP2002229634A JP2002229634A JP4225749B2 JP 4225749 B2 JP4225749 B2 JP 4225749B2 JP 2002229634 A JP2002229634 A JP 2002229634A JP 2002229634 A JP2002229634 A JP 2002229634A JP 4225749 B2 JP4225749 B2 JP 4225749B2
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data
memory
write
read
transfer
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JP2002229634A
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Japanese (ja)
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JP2004071066A5 (https=
JP2004071066A (ja
Inventor
司 大石
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2002229634A priority Critical patent/JP4225749B2/ja
Priority to US10/397,265 priority patent/US6922359B2/en
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Publication of JP2004071066A5 publication Critical patent/JP2004071066A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

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  • Read Only Memory (AREA)
  • Dram (AREA)
JP2002229634A 2002-08-07 2002-08-07 半導体記憶装置 Expired - Fee Related JP4225749B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002229634A JP4225749B2 (ja) 2002-08-07 2002-08-07 半導体記憶装置
US10/397,265 US6922359B2 (en) 2002-08-07 2003-03-27 Nonvolatile semiconductor memory device allowing high speed data transfer

Applications Claiming Priority (1)

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JP2002229634A JP4225749B2 (ja) 2002-08-07 2002-08-07 半導体記憶装置

Related Child Applications (1)

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JP2008201883A Division JP2008293648A (ja) 2008-08-05 2008-08-05 半導体記憶装置

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JP2004071066A JP2004071066A (ja) 2004-03-04
JP2004071066A5 JP2004071066A5 (https=) 2005-10-20
JP4225749B2 true JP4225749B2 (ja) 2009-02-18

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US (1) US6922359B2 (https=)
JP (1) JP4225749B2 (https=)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3976839B2 (ja) * 1996-07-09 2007-09-19 株式会社ルネサステクノロジ 不揮発性メモリシステムおよび不揮発性半導体メモリ
US6889304B2 (en) 2001-02-28 2005-05-03 Rambus Inc. Memory device supporting a dynamically configurable core organization
NL1019533C2 (nl) * 2001-12-11 2003-06-13 Double Bw Systems B V Op een besturingsorgaan gebaseerd hardware-element en werkwijze voor het instellen.
JP4241175B2 (ja) * 2003-05-09 2009-03-18 株式会社日立製作所 半導体装置
KR100532471B1 (ko) * 2003-09-26 2005-12-01 삼성전자주식회사 입출력 데이터 위스 조절이 가능한 메모리 장치 및 그위스 조절 방법
KR100596434B1 (ko) * 2003-12-29 2006-07-05 주식회사 하이닉스반도체 레이아웃 면적을 줄일 수 있는 반도체 메모리 장치
KR100610006B1 (ko) * 2004-05-04 2006-08-08 삼성전자주식회사 호스트 시스템의 다중동작 지원에 적합한 메모리 구조를갖는 반도체 메모리 장치
JP4613353B2 (ja) 2004-05-11 2011-01-19 スパンション エルエルシー 半導体装置およびプログラム方法
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP2005346819A (ja) * 2004-06-02 2005-12-15 Renesas Technology Corp 半導体装置
JP2006065928A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 不揮発性半導体記憶装置および半導体集積回路装置
US7254075B2 (en) * 2004-09-30 2007-08-07 Rambus Inc. Integrated circuit memory system having dynamic memory bank count and page size
ITMI20041988A1 (it) * 2004-10-20 2005-01-20 Atmel Corp "metodo e sistema per la fornitura di rilevazione in un dispositivo di memoria a banchi multipli."
WO2006044942A2 (en) * 2004-10-20 2006-04-27 Atmel Corporation Method and system for providing sensing circuitry in a multi-bank memory device
JP4281678B2 (ja) * 2004-11-29 2009-06-17 セイコーエプソン株式会社 電気光学装置の製造方法及び画像形成装置
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
KR100712508B1 (ko) * 2005-05-02 2007-04-30 삼성전자주식회사 메모리 장치의 구조
US7352626B1 (en) 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7307878B1 (en) 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US8358543B1 (en) * 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7957204B1 (en) * 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
JP4840720B2 (ja) * 2005-10-06 2011-12-21 セイコーエプソン株式会社 半導体記憶装置および電子機器
KR100766372B1 (ko) * 2005-11-29 2007-10-11 주식회사 하이닉스반도체 반도체 메모리의 뱅크 제어장치 및 방법
JP4392404B2 (ja) * 2005-12-07 2010-01-06 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
WO2007069322A1 (ja) * 2005-12-15 2007-06-21 Spansion Llc 半導体装置およびその制御方法
US7499369B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation Method of high-performance flash memory data transfer
US7499339B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation High-performance flash memory data transfer
US7525855B2 (en) * 2006-04-24 2009-04-28 Sandisk Corporation Method of high-performance flash memory data transfer
KR100694978B1 (ko) * 2006-05-12 2007-03-14 주식회사 하이닉스반도체 데이터 입출력 속도를 증가시키는 구조를 가지는 플래시메모리 장치 및 그 데이터 입출력 동작 방법
TWI402970B (zh) * 2006-12-27 2013-07-21 Hynix Semiconductor Inc 具有鐵電元件之半導體記憶元件及其更新方法
US8164941B2 (en) * 2006-12-27 2012-04-24 Hynix Semiconductor Inc. Semiconductor memory device with ferroelectric device and refresh method thereof
US7515501B2 (en) * 2007-05-24 2009-04-07 Micron Technology, Inc. Memory architecture having local column select lines
US7577024B2 (en) * 2007-05-25 2009-08-18 Intel Corporation Streaming mode programming in phase change memories
US7593284B2 (en) * 2007-10-17 2009-09-22 Unity Semiconductor Corporation Memory emulation using resistivity-sensitive memory
KR101434401B1 (ko) * 2007-12-17 2014-08-27 삼성전자주식회사 집적 회로 메모리 장치
CN102456403B (zh) * 2010-10-22 2014-11-12 北京大学 利用分裂槽栅快闪存储器实现四位存储的方法
KR101148352B1 (ko) * 2010-11-02 2012-05-21 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작 방법
KR102251241B1 (ko) * 2013-11-29 2021-05-12 삼성전자주식회사 재구성 가능 프로세서의 레지스터를 제어하는 방법 및 장치와 재구성 가능 프로세서의 레지스터를 제어하는 명령어를 생성하는 방법 및 장치
US9281024B2 (en) * 2014-04-17 2016-03-08 International Business Machines Corporation Write/read priority blocking scheme using parallel static address decode path
KR20160093430A (ko) * 2015-01-29 2016-08-08 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 데이터 입출력 방법
US10254967B2 (en) 2016-01-13 2019-04-09 Sandisk Technologies Llc Data path control for non-volatile memory
US10387046B2 (en) 2016-06-22 2019-08-20 Micron Technology, Inc. Bank to bank data transfer
US10528286B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10528267B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Command queue for storage operations
US10528255B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10114589B2 (en) * 2016-11-16 2018-10-30 Sandisk Technologies Llc Command control for multi-core non-volatile memory
KR102760721B1 (ko) * 2016-11-30 2025-02-03 삼성전자주식회사 바이트 액세서블 인터페이스 및 블록 액세서블 인터페이스를 지원하는 스토리지 장치 및 이를 포함하는 전자 시스템
US10580104B2 (en) * 2017-04-17 2020-03-03 Intel Corporation Read/write modes for reducing power consumption in graphics processing units
US10236038B2 (en) 2017-05-15 2019-03-19 Micron Technology, Inc. Bank to bank data transfer
KR102601213B1 (ko) 2018-07-03 2023-11-10 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 제조 방법
US11631465B2 (en) 2018-07-03 2023-04-18 Samsung Electronics Co., Ltd. Non-volatile memory device
US11164638B2 (en) 2018-07-03 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device
US10732892B2 (en) 2018-09-24 2020-08-04 Micron Technology, Inc. Data transfer in port switch memory
CN112767976B (zh) * 2021-01-09 2023-09-01 深圳市德明利技术股份有限公司 平稳闪存写速度的方法、装置、存储介质和计算机设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456965A (en) * 1980-10-14 1984-06-26 Texas Instruments Incorporated Data processing system having multiple buses
US5524225A (en) * 1992-12-18 1996-06-04 Advanced Micro Devices Inc. Cache system and method for providing software controlled writeback
EP0613088A1 (en) * 1993-02-24 1994-08-31 Digital Equipment Corporation Method of memory interleaving and memory systems interleaved thereby
JP3304909B2 (ja) * 1999-03-09 2002-07-22 日本電気株式会社 半導体集積回路装置

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US6922359B2 (en) 2005-07-26
US20040027857A1 (en) 2004-02-12
JP2004071066A (ja) 2004-03-04

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