JP4223614B2 - スパッタリング方法及び装置及び電子部品の製造方法 - Google Patents

スパッタリング方法及び装置及び電子部品の製造方法 Download PDF

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Publication number
JP4223614B2
JP4223614B2 JP00800099A JP800099A JP4223614B2 JP 4223614 B2 JP4223614 B2 JP 4223614B2 JP 00800099 A JP00800099 A JP 00800099A JP 800099 A JP800099 A JP 800099A JP 4223614 B2 JP4223614 B2 JP 4223614B2
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Prior art keywords
substrate
target
diameter
sputtering
distance
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JP00800099A
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Japanese (ja)
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JP2000265263A (ja
JP2000265263A5 (enrdf_load_stackoverflow
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孝二 恒川
和男 平田
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Canon Anelva Corp
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Canon Anelva Corp
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Priority to JP00800099A priority Critical patent/JP4223614B2/ja
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JP00800099A 1999-01-12 1999-01-14 スパッタリング方法及び装置及び電子部品の製造方法 Expired - Lifetime JP4223614B2 (ja)

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Application Number Priority Date Filing Date Title
JP00800099A JP4223614B2 (ja) 1999-01-12 1999-01-14 スパッタリング方法及び装置及び電子部品の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP508499 1999-01-12
JP11-5084 1999-01-12
JP00800099A JP4223614B2 (ja) 1999-01-12 1999-01-14 スパッタリング方法及び装置及び電子部品の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008229489A Division JP4740299B2 (ja) 1999-01-12 2008-09-08 スパッタリング方法及び装置及び電子部品の製造方法
JP2008229523A Division JP4740300B2 (ja) 1999-01-12 2008-09-08 スパッタリング方法及び装置及び電子部品の製造方法

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JP2000265263A JP2000265263A (ja) 2000-09-26
JP2000265263A5 JP2000265263A5 (enrdf_load_stackoverflow) 2008-08-21
JP4223614B2 true JP4223614B2 (ja) 2009-02-12

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JP00800099A Expired - Lifetime JP4223614B2 (ja) 1999-01-12 1999-01-14 スパッタリング方法及び装置及び電子部品の製造方法

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4502160B2 (ja) * 2000-09-27 2010-07-14 キヤノンアネルバ株式会社 磁性膜作成方法及び磁性膜作成装置並びに磁気記録ディスク製造方法
KR20040043046A (ko) * 2002-11-15 2004-05-22 삼성전자주식회사 마그네트론 스퍼터링 장치 및 스퍼터링 방법
TWI384472B (zh) * 2005-01-19 2013-02-01 Ulvac Inc 濺鍍裝置及成膜方法
JP2007291506A (ja) * 2006-03-31 2007-11-08 Canon Inc 成膜方法
WO2009081953A1 (ja) 2007-12-26 2009-07-02 Canon Anelva Corporation スパッタ装置、スパッタ成膜方法及び分析装置
US20110042209A1 (en) * 2008-06-25 2011-02-24 Canon Anelva Corporation Sputtering apparatus and recording medium for recording control program thereof
KR20110040894A (ko) * 2008-09-09 2011-04-20 캐논 아네르바 가부시키가이샤 자기 저항 소자의 제조 방법, 그 제조 방법에 이용되는 기억 매체
GB2477870B (en) 2008-09-30 2013-01-30 Canon Anelva Corp Sputtering device and sputtering method
KR20110036850A (ko) 2008-12-03 2011-04-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치, 자기 저항 소자의 제조 장치, 자성 박막의 성막 방법 및 성막 제어 프로그램
WO2010073330A1 (ja) * 2008-12-25 2010-07-01 キヤノンアネルバ株式会社 スパッタリング装置
JP4739464B2 (ja) 2008-12-26 2011-08-03 キヤノンアネルバ株式会社 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
JP5133232B2 (ja) * 2008-12-26 2013-01-30 株式会社アルバック 成膜装置及び成膜方法
JP5427572B2 (ja) * 2009-12-01 2014-02-26 昭和電工株式会社 マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法
JP5792723B2 (ja) 2010-06-25 2015-10-14 キヤノンアネルバ株式会社 スパッタリング装置、成膜方法、および制御装置
KR20120113283A (ko) * 2010-06-30 2012-10-12 가부시키가이샤 아루박 성막장치 및 성막방법
US20150114826A1 (en) * 2012-06-18 2015-04-30 Oerlikon Advanced Technologies Ag Pvd apparatus for directional material deposition, methods and workpiece
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
KR20210032519A (ko) * 2018-12-28 2021-03-24 가부시키가이샤 아루박 막형성 장치 및 막형성 방법

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