JP4221114B2 - 磁気抵抗効果型ヘッド - Google Patents

磁気抵抗効果型ヘッド Download PDF

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Publication number
JP4221114B2
JP4221114B2 JP13675899A JP13675899A JP4221114B2 JP 4221114 B2 JP4221114 B2 JP 4221114B2 JP 13675899 A JP13675899 A JP 13675899A JP 13675899 A JP13675899 A JP 13675899A JP 4221114 B2 JP4221114 B2 JP 4221114B2
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JP
Japan
Prior art keywords
insulating layer
layer
resistivity
sensor
shield layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP13675899A
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English (en)
Japanese (ja)
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JP2000331315A5 (enExample
JP2000331315A (ja
Inventor
城康 尾臺
又洋 小室
Original Assignee
株式会社日立グローバルストレージテクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立グローバルストレージテクノロジーズ filed Critical 株式会社日立グローバルストレージテクノロジーズ
Priority to JP13675899A priority Critical patent/JP4221114B2/ja
Priority to US09/383,214 priority patent/US6219206B1/en
Publication of JP2000331315A publication Critical patent/JP2000331315A/ja
Priority to US09/819,811 priority patent/US6404604B2/en
Publication of JP2000331315A5 publication Critical patent/JP2000331315A5/ja
Application granted granted Critical
Publication of JP4221114B2 publication Critical patent/JP4221114B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
JP13675899A 1999-05-18 1999-05-18 磁気抵抗効果型ヘッド Expired - Fee Related JP4221114B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP13675899A JP4221114B2 (ja) 1999-05-18 1999-05-18 磁気抵抗効果型ヘッド
US09/383,214 US6219206B1 (en) 1999-05-18 1999-08-26 Magneto-resistive effect type head
US09/819,811 US6404604B2 (en) 1999-05-18 2001-03-29 Magneto-resistive effect type head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13675899A JP4221114B2 (ja) 1999-05-18 1999-05-18 磁気抵抗効果型ヘッド

Publications (3)

Publication Number Publication Date
JP2000331315A JP2000331315A (ja) 2000-11-30
JP2000331315A5 JP2000331315A5 (enExample) 2006-04-06
JP4221114B2 true JP4221114B2 (ja) 2009-02-12

Family

ID=15182826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13675899A Expired - Fee Related JP4221114B2 (ja) 1999-05-18 1999-05-18 磁気抵抗効果型ヘッド

Country Status (2)

Country Link
US (2) US6219206B1 (enExample)
JP (1) JP4221114B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG68063A1 (en) * 1997-07-18 1999-10-19 Hitachi Ltd Magnetoresistive effect type reproducing head and magnetic disk apparatus equipped with the reproducing head
JP3344468B2 (ja) * 1998-12-21 2002-11-11 アルプス電気株式会社 薄膜磁気ヘッド
US6583971B1 (en) * 1999-03-09 2003-06-24 Sae Magnetics (Hk) Ltd. Elimination of electric-pop noise in MR/GMR device
JP4221114B2 (ja) * 1999-05-18 2009-02-12 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型ヘッド
JP2001006126A (ja) * 1999-06-17 2001-01-12 Nec Corp 磁気抵抗効果ヘッド及びそのヘッドを備えた磁気抵抗検出システム並びにそのヘッドを備えた磁気記憶システム
CN1451157A (zh) * 1999-10-05 2003-10-22 西加特技术有限责任公司 用于保护磁阻磁头避免静电放电的集成板上器件和方法
US6415500B1 (en) * 2000-01-13 2002-07-09 Headway Technologies, Inc. Method to prevent electrostatic discharge for MR/GMR wafer fabrication
JP3511371B2 (ja) * 2000-04-13 2004-03-29 アルプス電気株式会社 薄膜磁気ヘッド及びその製造方法
JP3929676B2 (ja) * 2000-05-26 2007-06-13 アルプス電気株式会社 薄膜磁気ヘッド及びその製造方法
US6773405B2 (en) * 2000-09-15 2004-08-10 Jacob Fraden Ear temperature monitor and method of temperature measurement
US6741429B1 (en) * 2000-09-25 2004-05-25 International Business Machines Corporation Ion beam definition of magnetoresistive field sensors
US7292400B2 (en) * 2001-04-23 2007-11-06 Seagate Technology Llc Device for limiting current in a sensor
JP3918496B2 (ja) * 2001-10-22 2007-05-23 株式会社日立製作所 液晶表示装置及びその製造方法
US6650511B2 (en) * 2002-02-11 2003-11-18 International Business Machines Corporation Magnetic head assembly with electrostatic discharge (ESD) shunt/pads seed layer
US20030169539A1 (en) * 2002-03-07 2003-09-11 International Business Machines Corporation Electrostatic discharge insensilive recording head with a high-resistance gap layer
US6870706B1 (en) * 2002-08-07 2005-03-22 Headway Technologies, Inc. Method for suppressing tribocharge in the assembly of magnetic heads
US7369370B2 (en) * 2002-08-07 2008-05-06 Headway Technologies, Inc. GMR head design that suppresses tribocharge during its assembly
JP2004110941A (ja) * 2002-09-19 2004-04-08 Hitachi Ltd 磁気記録媒体および磁気記憶装置
US7639459B2 (en) * 2005-01-10 2009-12-29 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
US8004795B2 (en) * 2007-12-26 2011-08-23 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head design having reduced susceptibility to electrostatic discharge from media surfaces
US8223462B2 (en) * 2008-05-30 2012-07-17 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor design for signal noise pickup reduction for use with deep gap electrostatic discharge shunt
DE102016105380A1 (de) 2016-03-22 2017-09-28 Infineon Technologies Ag Elektrischer Schirm zwischen magnetoresistiven Sensorelementen
US10354679B2 (en) 2016-12-13 2019-07-16 International Business Machines Corporation Magnetic recording module having tunnel valve sensors with dissimilar tunnel barrier resistivities
US10014014B1 (en) 2017-06-14 2018-07-03 International Business Machines Corporation Magnetic recording apparatus having circuits with differing tunnel valve sensors and about the same resistance

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639806A (en) * 1983-09-09 1987-01-27 Sharp Kabushiki Kaisha Thin film magnetic head having a magnetized ferromagnetic film on the MR element
JPH05205224A (ja) * 1992-01-27 1993-08-13 Hitachi Ltd 磁気ヘッド
US5609948A (en) * 1992-08-21 1997-03-11 Minnesota Mining And Manufacturing Company Laminate containing diamond-like carbon and thin-film magnetic head assembly formed thereon
JPH06223331A (ja) * 1993-01-26 1994-08-12 Matsushita Electric Ind Co Ltd 磁気抵抗効果型薄膜磁気ヘッド
JPH06274830A (ja) * 1993-03-25 1994-09-30 Ngk Insulators Ltd 薄膜磁気ヘッド
JP2741837B2 (ja) 1993-08-06 1998-04-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜磁気抵抗ヘッド
US5375022A (en) 1993-08-06 1994-12-20 International Business Machines Corporation Magnetic disk drive with electrical shorting protection
US5644455A (en) * 1993-12-30 1997-07-01 Seagate Technology, Inc. Amorphous diamond-like carbon gaps in magnetoresistive heads
US5539598A (en) 1994-12-08 1996-07-23 International Business Machines Corporation Electrostatic protection for a shielded MR sensor
JPH08273126A (ja) * 1995-03-28 1996-10-18 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH10228610A (ja) * 1997-02-13 1998-08-25 Yamaha Corp シールド型磁気抵抗効果薄膜磁気ヘッド
US5986857A (en) * 1997-02-13 1999-11-16 Sanyo Electric Co., Ltd. Thin film magnetic head including adhesion enhancing interlayers, and upper and lower gap insulative layers having different hydrogen contents and internal stress states
JPH10247307A (ja) 1997-03-04 1998-09-14 Fujitsu Ltd 磁気ヘッド及び磁気記憶装置
JP3157770B2 (ja) * 1997-09-17 2001-04-16 アルプス電気株式会社 薄膜磁気ヘッド
JP3576361B2 (ja) * 1997-09-18 2004-10-13 富士通株式会社 磁気抵抗効果型ヘッド及び磁気記録再生装置
US6188549B1 (en) * 1997-12-10 2001-02-13 Read-Rite Corporation Magnetoresistive read/write head with high-performance gap layers
JP4221114B2 (ja) * 1999-05-18 2009-02-12 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型ヘッド

Also Published As

Publication number Publication date
US20010009492A1 (en) 2001-07-26
JP2000331315A (ja) 2000-11-30
US6404604B2 (en) 2002-06-11
US6219206B1 (en) 2001-04-17

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