JP4213030B2 - リング型スパッタリング・ターゲット - Google Patents

リング型スパッタリング・ターゲット Download PDF

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Publication number
JP4213030B2
JP4213030B2 JP2003502264A JP2003502264A JP4213030B2 JP 4213030 B2 JP4213030 B2 JP 4213030B2 JP 2003502264 A JP2003502264 A JP 2003502264A JP 2003502264 A JP2003502264 A JP 2003502264A JP 4213030 B2 JP4213030 B2 JP 4213030B2
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JP
Japan
Prior art keywords
sputtering
region
substrate
cathode
outer ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003502264A
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English (en)
Japanese (ja)
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JP2004535513A (ja
JP2004535513A5 (https=
Inventor
マークス、ダニエル、アール
マシュー、ラジャン
スノウマン、アルフレッド
フィッシャー、チャールズ、アール
Original Assignee
プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド
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Application filed by プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド filed Critical プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド
Publication of JP2004535513A publication Critical patent/JP2004535513A/ja
Publication of JP2004535513A5 publication Critical patent/JP2004535513A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003502264A 2001-06-05 2002-05-31 リング型スパッタリング・ターゲット Expired - Fee Related JP4213030B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/873,184 US6638402B2 (en) 2001-06-05 2001-06-05 Ring-type sputtering target
PCT/US2002/017001 WO2002099158A1 (en) 2001-06-05 2002-05-31 Ring-type sputtering target

Publications (3)

Publication Number Publication Date
JP2004535513A JP2004535513A (ja) 2004-11-25
JP2004535513A5 JP2004535513A5 (https=) 2005-12-22
JP4213030B2 true JP4213030B2 (ja) 2009-01-21

Family

ID=25361131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003502264A Expired - Fee Related JP4213030B2 (ja) 2001-06-05 2002-05-31 リング型スパッタリング・ターゲット

Country Status (9)

Country Link
US (1) US6638402B2 (https=)
EP (1) EP1402081B1 (https=)
JP (1) JP4213030B2 (https=)
KR (1) KR100907757B1 (https=)
CN (1) CN1266305C (https=)
DE (1) DE60235008D1 (https=)
IL (2) IL158994A0 (https=)
TW (1) TW573043B (https=)
WO (1) WO2002099158A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015111576A1 (ja) 2014-01-21 2015-07-30 住友化学株式会社 スパッタリングターゲット

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178301A1 (en) * 2001-12-21 2003-09-25 Lynn David Mark Planar magnetron targets having target material affixed to non-planar backing plates
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US20060032740A1 (en) * 2004-08-16 2006-02-16 Williams Advanced Materials, Inc. Slotted thin-film sputter deposition targets for ferromagnetic materials
EP2236644A3 (en) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Sputtering target backing plate assembly and film deposition system
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
CN100476018C (zh) * 2005-09-26 2009-04-08 台湾积体电路制造股份有限公司 指示器的形成方法
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
WO2010042227A1 (en) * 2008-10-10 2010-04-15 Tosoh Smd, Inc. Circular groove pressing mechanism and method for sputtering target manufacturing
JP5502442B2 (ja) * 2009-02-26 2014-05-28 キヤノンアネルバ株式会社 マグネトロンスパッタカソード、マグネトロンスパッタ装置及び磁性デバイスの製造方法
WO2011103693A1 (en) * 2010-02-23 2011-09-01 Oc Oerlikon Balzers Ag Target shaping
JP5619666B2 (ja) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションＪＤＳ Ｕｎｉｐｈａｓｅ Ｃｏｒｐｏｒａｔｉｏｎ マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード
US20140110245A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Non-bonded rotatable targets and their methods of sputtering
CN105008582A (zh) * 2013-01-04 2015-10-28 东曹Smd有限公司 具有增强的表面轮廓和改善的性能的硅溅射靶及其制造方法
WO2018119600A1 (zh) * 2016-12-26 2018-07-05 深圳市柔宇科技有限公司 磁控溅射阴极系统
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN110010455A (zh) * 2018-01-04 2019-07-12 合肥江丰电子材料有限公司 长寿命lcd靶材组件及其形成方法
KR102446965B1 (ko) * 2021-01-28 2022-09-26 (주)지오엘리먼트 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate
CN117867455A (zh) * 2023-11-24 2024-04-12 英诺赛科（珠海）科技有限公司 一种靶材及GaN HEMT器件的制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583977A (ja) 1981-06-29 1983-01-10 Fujitsu Ltd スパツタリング装置
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置
JPH04173965A (ja) 1990-11-05 1992-06-22 Vacuum Metallurgical Co Ltd スパッタリング用ターゲット
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
US5540821A (en) * 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
JPH08239763A (ja) * 1995-02-27 1996-09-17 Nec Kansai Ltd スパッタ装置及びその調整方法
US6068742A (en) 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6086725A (en) * 1998-04-02 2000-07-11 Applied Materials, Inc. Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP2001140063A (ja) 1999-09-23 2001-05-22 Praxair St Technol Inc 延長された寿命を有するスパッタターゲット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015111576A1 (ja) 2014-01-21 2015-07-30 住友化学株式会社 スパッタリングターゲット
JP2017179609A (ja) * 2014-01-21 2017-10-05 住友化学株式会社 スパッタリングターゲット
US11532468B2 (en) 2014-01-21 2022-12-20 Sumitomo Chemical Company, Limited Sputtering target

Also Published As

Publication number Publication date
IL158994A0 (en) 2004-05-12
US6638402B2 (en) 2003-10-28
TW573043B (en) 2004-01-21
JP2004535513A (ja) 2004-11-25
EP1402081A1 (en) 2004-03-31
KR20040030649A (ko) 2004-04-09
CN1541281A (zh) 2004-10-27
US20030075437A1 (en) 2003-04-24
EP1402081A4 (en) 2007-10-10
KR100907757B1 (ko) 2009-07-15
IL158994A (en) 2007-02-11
EP1402081B1 (en) 2010-01-06
CN1266305C (zh) 2006-07-26
WO2002099158A1 (en) 2002-12-12
DE60235008D1 (de) 2010-02-25

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