JP4209477B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4209477B2
JP4209477B2 JP33289596A JP33289596A JP4209477B2 JP 4209477 B2 JP4209477 B2 JP 4209477B2 JP 33289596 A JP33289596 A JP 33289596A JP 33289596 A JP33289596 A JP 33289596A JP 4209477 B2 JP4209477 B2 JP 4209477B2
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JP
Japan
Prior art keywords
film
insulating film
resin material
interlayer insulating
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33289596A
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English (en)
Japanese (ja)
Other versions
JPH09219453A5 (enExample
JPH09219453A (ja
Inventor
舜平 山崎
健司 福永
英臣 須沢
美佐子 仲沢
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP33289596A priority Critical patent/JP4209477B2/ja
Publication of JPH09219453A publication Critical patent/JPH09219453A/ja
Publication of JPH09219453A5 publication Critical patent/JPH09219453A5/ja
Application granted granted Critical
Publication of JP4209477B2 publication Critical patent/JP4209477B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP33289596A 1995-11-27 1996-11-27 半導体装置の作製方法 Expired - Fee Related JP4209477B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33289596A JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP33263095 1995-11-27
JP7-332630 1995-11-27
JP34563195 1995-12-09
JP7-345631 1995-12-09
JP33289596A JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004233978A Division JP4209822B2 (ja) 1995-11-27 2004-08-11 液晶表示装置の作製方法及びｅｌ表示装置の作製方法
JP2008203838A Division JP4999799B2 (ja) 1995-11-27 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09219453A JPH09219453A (ja) 1997-08-19
JPH09219453A5 JPH09219453A5 (enExample) 2004-11-18
JP4209477B2 true JP4209477B2 (ja) 2009-01-14

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ID=27340552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33289596A Expired - Fee Related JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Country Status (1)

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JP (1) JP4209477B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583471B1 (en) * 1999-06-02 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having first and second insulating films
TWI269248B (en) 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
KR100611148B1 (ko) 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
JP6485024B2 (ja) * 2014-12-10 2019-03-20 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
CN116154003A (zh) 2015-11-20 2023-05-23 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置以及包括该半导体装置的电子设备
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置

Also Published As

Publication number Publication date
JPH09219453A (ja) 1997-08-19

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