JPH09219453A5 - - Google Patents

Info

Publication number
JPH09219453A5
JPH09219453A5 JP1996332895A JP33289596A JPH09219453A5 JP H09219453 A5 JPH09219453 A5 JP H09219453A5 JP 1996332895 A JP1996332895 A JP 1996332895A JP 33289596 A JP33289596 A JP 33289596A JP H09219453 A5 JPH09219453 A5 JP H09219453A5
Authority
JP
Japan
Prior art keywords
insulating film
film made
resin material
silicide
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996332895A
Other languages
English (en)
Japanese (ja)
Other versions
JP4209477B2 (ja
JPH09219453A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33289596A priority Critical patent/JP4209477B2/ja
Priority claimed from JP33289596A external-priority patent/JP4209477B2/ja
Publication of JPH09219453A publication Critical patent/JPH09219453A/ja
Publication of JPH09219453A5 publication Critical patent/JPH09219453A5/ja
Application granted granted Critical
Publication of JP4209477B2 publication Critical patent/JP4209477B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33289596A 1995-11-27 1996-11-27 半導体装置の作製方法 Expired - Fee Related JP4209477B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33289596A JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP33263095 1995-11-27
JP7-332630 1995-11-27
JP34563195 1995-12-09
JP7-345631 1995-12-09
JP33289596A JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004233978A Division JP4209822B2 (ja) 1995-11-27 2004-08-11 液晶表示装置の作製方法及びel表示装置の作製方法
JP2008203838A Division JP4999799B2 (ja) 1995-11-27 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09219453A JPH09219453A (ja) 1997-08-19
JPH09219453A5 true JPH09219453A5 (enExample) 2004-11-18
JP4209477B2 JP4209477B2 (ja) 2009-01-14

Family

ID=27340552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33289596A Expired - Fee Related JP4209477B2 (ja) 1995-11-27 1996-11-27 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4209477B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583471B1 (en) * 1999-06-02 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having first and second insulating films
TWI269248B (en) 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
KR100611148B1 (ko) 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
JP6485024B2 (ja) * 2014-12-10 2019-03-20 株式会社Joled 薄膜トランジスタ基板の製造方法
CN116154003A (zh) 2015-11-20 2023-05-23 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置以及包括该半导体装置的电子设备
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置

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