JP4173806B2 - 導波路付きレーザダイオードチップ - Google Patents

導波路付きレーザダイオードチップ Download PDF

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Publication number
JP4173806B2
JP4173806B2 JP2003509207A JP2003509207A JP4173806B2 JP 4173806 B2 JP4173806 B2 JP 4173806B2 JP 2003509207 A JP2003509207 A JP 2003509207A JP 2003509207 A JP2003509207 A JP 2003509207A JP 4173806 B2 JP4173806 B2 JP 4173806B2
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Japan
Prior art keywords
waveguide
laser
laser diode
diode chip
optical
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Expired - Fee Related
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JP2003509207A
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Japanese (ja)
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JP2004531904A5 (enExample
JP2004531904A (ja
Inventor
エー． ハーセ，マイケル
オー．ピー． チャレリ，アレッサンドラ
ジェイ． ミラー，トーマス
シー． グリロ，ドナルド
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2004531904A5 publication Critical patent/JP2004531904A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/17—Solid materials amorphous, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP2003509207A 2001-06-29 2002-06-25 導波路付きレーザダイオードチップ Expired - Fee Related JP4173806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30226801P 2001-06-29 2001-06-29
US10/177,176 US6873638B2 (en) 2001-06-29 2002-06-21 Laser diode chip with waveguide
PCT/US2002/020344 WO2003003083A2 (en) 2001-06-29 2002-06-25 Laser diode chip with waveguide

Publications (3)

Publication Number Publication Date
JP2004531904A JP2004531904A (ja) 2004-10-14
JP2004531904A5 JP2004531904A5 (enExample) 2006-01-05
JP4173806B2 true JP4173806B2 (ja) 2008-10-29

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JP2003509207A Expired - Fee Related JP4173806B2 (ja) 2001-06-29 2002-06-25 導波路付きレーザダイオードチップ

Country Status (9)

Country Link
US (1) US6873638B2 (enExample)
EP (1) EP1402606B1 (enExample)
JP (1) JP4173806B2 (enExample)
KR (1) KR100832381B1 (enExample)
CN (1) CN1246942C (enExample)
AT (1) ATE316701T1 (enExample)
AU (1) AU2002320167A1 (enExample)
DE (1) DE60208905T2 (enExample)
WO (1) WO2003003083A2 (enExample)

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US20070084499A1 (en) * 2005-10-14 2007-04-19 Biprodas Dutta Thermoelectric device produced by quantum confinement in nanostructures
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US20070131269A1 (en) * 2005-12-09 2007-06-14 Biprodas Dutta High density nanowire arrays in glassy matrix
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US20080192794A1 (en) * 2007-02-14 2008-08-14 Jacob Meyer Hammer Lateral-Bragg-Grating-Surface-Emitting Laser/Amplifier (LBGSE)
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JP5250245B2 (ja) * 2007-11-21 2013-07-31 日本オクラロ株式会社 半導体レーザ
KR100958338B1 (ko) * 2007-12-18 2010-05-17 한국전자통신연구원 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저
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Also Published As

Publication number Publication date
US20030007535A1 (en) 2003-01-09
DE60208905T2 (de) 2006-08-10
WO2003003083A2 (en) 2003-01-09
AU2002320167A1 (en) 2003-03-03
ATE316701T1 (de) 2006-02-15
CN1246942C (zh) 2006-03-22
EP1402606B1 (en) 2006-01-25
WO2003003083A3 (en) 2003-08-14
DE60208905D1 (de) 2006-04-13
CN1524325A (zh) 2004-08-25
EP1402606A2 (en) 2004-03-31
JP2004531904A (ja) 2004-10-14
KR20040013000A (ko) 2004-02-11
KR100832381B1 (ko) 2008-05-26
US6873638B2 (en) 2005-03-29

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