JP2004531904A5 - - Google Patents

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Publication number
JP2004531904A5
JP2004531904A5 JP2003509207A JP2003509207A JP2004531904A5 JP 2004531904 A5 JP2004531904 A5 JP 2004531904A5 JP 2003509207 A JP2003509207 A JP 2003509207A JP 2003509207 A JP2003509207 A JP 2003509207A JP 2004531904 A5 JP2004531904 A5 JP 2004531904A5
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JP
Japan
Prior art keywords
laser
waveguide
diode chip
optical amplifier
laser diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003509207A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004531904A (ja
JP4173806B2 (ja
Filing date
Publication date
Priority claimed from US10/177,176 external-priority patent/US6873638B2/en
Application filed filed Critical
Publication of JP2004531904A publication Critical patent/JP2004531904A/ja
Publication of JP2004531904A5 publication Critical patent/JP2004531904A5/ja
Application granted granted Critical
Publication of JP4173806B2 publication Critical patent/JP4173806B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003509207A 2001-06-29 2002-06-25 導波路付きレーザダイオードチップ Expired - Fee Related JP4173806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30226801P 2001-06-29 2001-06-29
US10/177,176 US6873638B2 (en) 2001-06-29 2002-06-21 Laser diode chip with waveguide
PCT/US2002/020344 WO2003003083A2 (en) 2001-06-29 2002-06-25 Laser diode chip with waveguide

Publications (3)

Publication Number Publication Date
JP2004531904A JP2004531904A (ja) 2004-10-14
JP2004531904A5 true JP2004531904A5 (enExample) 2006-01-05
JP4173806B2 JP4173806B2 (ja) 2008-10-29

Family

ID=26873008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003509207A Expired - Fee Related JP4173806B2 (ja) 2001-06-29 2002-06-25 導波路付きレーザダイオードチップ

Country Status (9)

Country Link
US (1) US6873638B2 (enExample)
EP (1) EP1402606B1 (enExample)
JP (1) JP4173806B2 (enExample)
KR (1) KR100832381B1 (enExample)
CN (1) CN1246942C (enExample)
AT (1) ATE316701T1 (enExample)
AU (1) AU2002320167A1 (enExample)
DE (1) DE60208905T2 (enExample)
WO (1) WO2003003083A2 (enExample)

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WO2010027581A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
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CN111221076A (zh) * 2011-09-29 2020-06-02 英特尔公司 用于平面光子电路的垂直光学耦合器
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CN105445854B (zh) * 2015-11-06 2018-09-25 南京邮电大学 硅衬底悬空led光波导集成光子器件及其制备方法
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