DE60208905T2 - Diodenlaserchip mit wellenleiter - Google Patents
Diodenlaserchip mit wellenleiter Download PDFInfo
- Publication number
- DE60208905T2 DE60208905T2 DE60208905T DE60208905T DE60208905T2 DE 60208905 T2 DE60208905 T2 DE 60208905T2 DE 60208905 T DE60208905 T DE 60208905T DE 60208905 T DE60208905 T DE 60208905T DE 60208905 T2 DE60208905 T2 DE 60208905T2
- Authority
- DE
- Germany
- Prior art keywords
- laser
- waveguide
- laser diode
- diode chip
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30226801P | 2001-06-29 | 2001-06-29 | |
| US302268P | 2001-06-29 | ||
| US177176 | 2002-06-21 | ||
| US10/177,176 US6873638B2 (en) | 2001-06-29 | 2002-06-21 | Laser diode chip with waveguide |
| PCT/US2002/020344 WO2003003083A2 (en) | 2001-06-29 | 2002-06-25 | Laser diode chip with waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60208905D1 DE60208905D1 (de) | 2006-04-13 |
| DE60208905T2 true DE60208905T2 (de) | 2006-08-10 |
Family
ID=26873008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60208905T Expired - Lifetime DE60208905T2 (de) | 2001-06-29 | 2002-06-25 | Diodenlaserchip mit wellenleiter |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6873638B2 (enExample) |
| EP (1) | EP1402606B1 (enExample) |
| JP (1) | JP4173806B2 (enExample) |
| KR (1) | KR100832381B1 (enExample) |
| CN (1) | CN1246942C (enExample) |
| AT (1) | ATE316701T1 (enExample) |
| AU (1) | AU2002320167A1 (enExample) |
| DE (1) | DE60208905T2 (enExample) |
| WO (1) | WO2003003083A2 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6941043B1 (en) * | 2001-07-10 | 2005-09-06 | K2 Optronics, Inc. | Wavelength stabilization of an external cavity laser diode (ECLD) |
| US6832034B2 (en) * | 2002-06-21 | 2004-12-14 | 3M Innovative Properties Company | Optical waveguide |
| WO2004038871A2 (en) * | 2002-08-22 | 2004-05-06 | Xponent Photonics Inc. | Grating-stabilized semiconductor laser |
| US7164837B2 (en) * | 2002-12-06 | 2007-01-16 | Agency For Science, Technology And Research | Method of fabricating optical waveguide devices with smooth and flat dielectric interfaces |
| US20050135725A1 (en) * | 2003-12-23 | 2005-06-23 | 3M Innovative Properties Company | Laser submounts with standoff structures |
| DE102004020454A1 (de) * | 2004-04-27 | 2005-11-24 | Heidelberger Druckmaschinen Ag | Vorrichtung zur Zuführung von Strahlungsenergie auf einen Bedruckstoff |
| US7119377B2 (en) * | 2004-06-18 | 2006-10-10 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
| US7126160B2 (en) * | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
| US7173950B2 (en) * | 2004-06-25 | 2007-02-06 | Bookham Technology Plc | Low-noise high-power SHG laser system |
| US7508857B2 (en) * | 2004-12-14 | 2009-03-24 | Electronics And Telecommunications Research Institute | Semiconductor laser diode and method of manufacturing the same |
| KR100710048B1 (ko) * | 2004-12-14 | 2007-04-23 | 한국전자통신연구원 | 반도체 레이저 다이오드 및 그 제조방법 |
| US20070084499A1 (en) * | 2005-10-14 | 2007-04-19 | Biprodas Dutta | Thermoelectric device produced by quantum confinement in nanostructures |
| US20070084495A1 (en) * | 2005-10-14 | 2007-04-19 | Biprodas Dutta | Method for producing practical thermoelectric devices using quantum confinement in nanostructures |
| US7559215B2 (en) * | 2005-12-09 | 2009-07-14 | Zt3 Technologies, Inc. | Methods of drawing high density nanowire arrays in a glassy matrix |
| US8658880B2 (en) * | 2005-12-09 | 2014-02-25 | Zt3 Technologies, Inc. | Methods of drawing wire arrays |
| JP2009518842A (ja) * | 2005-12-09 | 2009-05-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 先細りにされている導波路の区域を有する光励起導波路レーザ |
| US20070131269A1 (en) * | 2005-12-09 | 2007-06-14 | Biprodas Dutta | High density nanowire arrays in glassy matrix |
| US7767564B2 (en) * | 2005-12-09 | 2010-08-03 | Zt3 Technologies, Inc. | Nanowire electronic devices and method for producing the same |
| KR101059331B1 (ko) * | 2006-02-22 | 2011-08-24 | 아이디 코포레이션 | 입력 클래딩 모드 흡수 구조 및/또는 출력 세그먼트 테이퍼구조를 갖는 저손실 깔대기형 피엘씨 광 스플리터 |
| US20080192794A1 (en) * | 2007-02-14 | 2008-08-14 | Jacob Meyer Hammer | Lateral-Bragg-Grating-Surface-Emitting Laser/Amplifier (LBGSE) |
| US20080310808A1 (en) * | 2007-06-18 | 2008-12-18 | International Business Machines Corporation | Photonic waveguide structure with planarized sidewall cladding layer |
| US7551826B2 (en) * | 2007-06-26 | 2009-06-23 | The University Of Connecticut | Integrated circuit employing low loss spot-size converter |
| JP5250245B2 (ja) * | 2007-11-21 | 2013-07-31 | 日本オクラロ株式会社 | 半導体レーザ |
| KR100958338B1 (ko) * | 2007-12-18 | 2010-05-17 | 한국전자통신연구원 | 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저 |
| US7693373B2 (en) * | 2007-12-18 | 2010-04-06 | Analog Devices, Inc. | Bidirectional optical link over a single multimode fiber or waveguide |
| WO2010027580A2 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Light source having light blocking components |
| EP2332223A1 (en) * | 2008-09-04 | 2011-06-15 | 3M Innovative Properties Company | I i-vi mqw vcsel on a heat sink optically pumped by a gan ld |
| EP2335293A1 (en) * | 2008-09-04 | 2011-06-22 | 3M Innovative Properties Company | Light source with improved monochromaticity |
| WO2010027581A1 (en) | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source |
| CN101907754A (zh) * | 2010-07-09 | 2010-12-08 | 浙江大学 | 一种用于半导体激光器的波导耦合器芯片 |
| JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
| CN111221076A (zh) * | 2011-09-29 | 2020-06-02 | 英特尔公司 | 用于平面光子电路的垂直光学耦合器 |
| US9726536B2 (en) | 2011-12-23 | 2017-08-08 | Technion Research And Development Foundation Limited | Fiber optical superconducting nanowire single photon detector |
| US8681594B1 (en) | 2012-09-28 | 2014-03-25 | Western Digital (Fremont), Llc | Method and system for improving laser alignment and optical transmission efficiency of an energy assisted magnetic recording head |
| CN104184046B (zh) * | 2014-08-29 | 2017-01-25 | 清华大学 | 用于半导体激光器与TriPleX波导耦合的耦合结构及制备方法 |
| CN105445854B (zh) * | 2015-11-06 | 2018-09-25 | 南京邮电大学 | 硅衬底悬空led光波导集成光子器件及其制备方法 |
| US10020635B1 (en) | 2016-04-15 | 2018-07-10 | University Of Central Florida Research Foundation, Inc. | Spectrometer device with stabilized laser and related devices and methods |
| US10355449B2 (en) | 2016-08-15 | 2019-07-16 | University Of Central Florida Research Foundation, Inc. | Quantum cascade laser with angled active region and related methods |
| FR3060772B1 (fr) * | 2016-12-20 | 2022-12-30 | Thales Sa | Circuit photonique integre optimise |
| CN108899760B (zh) * | 2018-07-12 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | 一种半导体激光器及制作方法 |
| CN110749955A (zh) * | 2018-07-23 | 2020-02-04 | 上海新微技术研发中心有限公司 | 光波模式转换装置及其制造方法 |
| WO2020096950A1 (en) * | 2018-11-06 | 2020-05-14 | The Regents Of The University Of California | Heterogeneously integrated indium gallium nitride on silicon photonic integrated circuits |
| CN115152107A (zh) * | 2020-02-28 | 2022-10-04 | 三菱电机株式会社 | 半导体激光装置 |
| CN114843869A (zh) * | 2021-02-01 | 2022-08-02 | 济南量子技术研究院 | 用于超短脉冲宽带倍频的非线性晶体脊型波导器件及其制备方法 |
| WO2023046473A1 (en) * | 2021-09-23 | 2023-03-30 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device and glasses |
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| US4875216A (en) * | 1987-11-30 | 1989-10-17 | Xerox Corporation | Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications |
| US5144634A (en) | 1989-09-07 | 1992-09-01 | International Business Machines Corporation | Method for mirror passivation of semiconductor laser diodes |
| US5585957A (en) * | 1993-03-25 | 1996-12-17 | Nippon Telegraph And Telephone Corporation | Method for producing various semiconductor optical devices of differing optical characteristics |
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| US5389396A (en) | 1993-08-11 | 1995-02-14 | Northwestern University | InGaAsP/GaAs diode laser |
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| EP0689067A3 (en) * | 1994-06-22 | 1997-04-09 | Fujitsu Ltd | Manufacturing process for an optical waveguide system, optical component and optical coupler with its use, optical network and optical circuit board |
| US5764842A (en) * | 1995-03-23 | 1998-06-09 | Hitachi, Ltd. | Semiconductor guided-wave optical device and method of fabricating thereof |
| US5879962A (en) | 1995-12-13 | 1999-03-09 | Minnesota Mining And Manufacturing Company | III-V/II-VI Semiconductor interface fabrication method |
| FR2747192B1 (fr) * | 1996-04-04 | 1998-04-30 | Commissariat Energie Atomique | Dispositif de detection de gaz a distance comportant un microlaser |
| DE19626130A1 (de) * | 1996-06-28 | 1998-01-08 | Sel Alcatel Ag | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
| DE19626113A1 (de) * | 1996-06-28 | 1998-01-02 | Sel Alcatel Ag | Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter |
| JPH1048789A (ja) * | 1996-08-02 | 1998-02-20 | Fuji Photo Film Co Ltd | ハロゲン化銀カラー写真感光材料の処理方法 |
| DE19652533C1 (de) | 1996-12-17 | 1998-04-30 | Siemens Ag | Optoelektronischer Modul |
| US5870417A (en) | 1996-12-20 | 1999-02-09 | Sdl, Inc. | Thermal compensators for waveguide DBR laser sources |
| EP0867985B1 (en) * | 1997-03-27 | 2001-02-14 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Erbium-doped planar waveguide |
| US6087725A (en) * | 1997-09-29 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Low barrier ohmic contact for semiconductor light emitting device |
| US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
| US6160660A (en) * | 1997-12-31 | 2000-12-12 | Pirelli Cavi E Sistemi S.P.A. | Bidirectional optical transmission system for dense interleaved wavelength division multiplexing |
| JPH11218641A (ja) | 1998-02-04 | 1999-08-10 | Furukawa Electric Co Ltd:The | レンズ付き光ファイバとレーザモジュール |
| US6137117A (en) * | 1999-06-21 | 2000-10-24 | The United States Of America As Represented By The Secretary Of The Navy | Integrating multi-waveguide sensor |
| US6312581B1 (en) | 1999-11-30 | 2001-11-06 | Agere Systems Optoelectronics Guardian Corp. | Process for fabricating an optical device |
| US6580850B1 (en) | 2000-11-24 | 2003-06-17 | Applied Wdm, Inc. | Optical waveguide multimode to single mode transformer |
-
2002
- 2002-06-21 US US10/177,176 patent/US6873638B2/en not_active Expired - Lifetime
- 2002-06-25 EP EP02749671A patent/EP1402606B1/en not_active Expired - Lifetime
- 2002-06-25 CN CNB028131673A patent/CN1246942C/zh not_active Expired - Fee Related
- 2002-06-25 JP JP2003509207A patent/JP4173806B2/ja not_active Expired - Fee Related
- 2002-06-25 AT AT02749671T patent/ATE316701T1/de not_active IP Right Cessation
- 2002-06-25 AU AU2002320167A patent/AU2002320167A1/en not_active Abandoned
- 2002-06-25 WO PCT/US2002/020344 patent/WO2003003083A2/en not_active Ceased
- 2002-06-25 KR KR1020037017135A patent/KR100832381B1/ko not_active Expired - Fee Related
- 2002-06-25 DE DE60208905T patent/DE60208905T2/de not_active Expired - Lifetime
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| US20030007535A1 (en) | 2003-01-09 |
| WO2003003083A2 (en) | 2003-01-09 |
| AU2002320167A1 (en) | 2003-03-03 |
| ATE316701T1 (de) | 2006-02-15 |
| CN1246942C (zh) | 2006-03-22 |
| EP1402606B1 (en) | 2006-01-25 |
| WO2003003083A3 (en) | 2003-08-14 |
| DE60208905D1 (de) | 2006-04-13 |
| CN1524325A (zh) | 2004-08-25 |
| EP1402606A2 (en) | 2004-03-31 |
| JP2004531904A (ja) | 2004-10-14 |
| KR20040013000A (ko) | 2004-02-11 |
| KR100832381B1 (ko) | 2008-05-26 |
| JP4173806B2 (ja) | 2008-10-29 |
| US6873638B2 (en) | 2005-03-29 |
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