JP4169073B2 - 薄膜半導体装置および薄膜半導体装置の製造方法 - Google Patents

薄膜半導体装置および薄膜半導体装置の製造方法 Download PDF

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Publication number
JP4169073B2
JP4169073B2 JP2006347053A JP2006347053A JP4169073B2 JP 4169073 B2 JP4169073 B2 JP 4169073B2 JP 2006347053 A JP2006347053 A JP 2006347053A JP 2006347053 A JP2006347053 A JP 2006347053A JP 4169073 B2 JP4169073 B2 JP 4169073B2
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Japan
Prior art keywords
thin film
semiconductor device
band
crystalline
active region
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Expired - Fee Related
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JP2006347053A
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English (en)
Japanese (ja)
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JP2007281423A (ja
Inventor
暁夫 町田
敏夫 藤野
正洋 河野
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006347053A priority Critical patent/JP4169073B2/ja
Priority to TW096107708A priority patent/TW200802891A/zh
Priority to KR1020070023994A priority patent/KR101360302B1/ko
Priority to US11/685,550 priority patent/US7521712B2/en
Priority to CN200710086328XA priority patent/CN101038937B/zh
Publication of JP2007281423A publication Critical patent/JP2007281423A/ja
Priority to US12/134,698 priority patent/US7598160B2/en
Application granted granted Critical
Publication of JP4169073B2 publication Critical patent/JP4169073B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2006347053A 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法 Expired - Fee Related JP4169073B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006347053A JP4169073B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法
TW096107708A TW200802891A (en) 2006-03-13 2007-03-06 Thin film semiconductor device and method for manufacturing the same
KR1020070023994A KR101360302B1 (ko) 2006-03-13 2007-03-12 박막 반도체 장치 및 박막 반도체 장치의 제조 방법
US11/685,550 US7521712B2 (en) 2006-03-13 2007-03-13 Thin film semiconductor device
CN200710086328XA CN101038937B (zh) 2006-03-13 2007-03-13 薄膜半导体器件及其制造方法
US12/134,698 US7598160B2 (en) 2006-03-13 2008-06-06 Method for manufacturing thin film semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006067273 2006-03-13
JP2006347053A JP4169073B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2007281423A JP2007281423A (ja) 2007-10-25
JP4169073B2 true JP4169073B2 (ja) 2008-10-22

Family

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JP2006347053A Expired - Fee Related JP4169073B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法

Country Status (5)

Country Link
US (2) US7521712B2 (enExample)
JP (1) JP4169073B2 (enExample)
KR (1) KR101360302B1 (enExample)
CN (1) CN101038937B (enExample)
TW (1) TW200802891A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2304802B8 (en) * 2008-07-18 2013-12-04 Panasonic Corporation Semiconductor material
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI875442B (zh) * 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2011151955A1 (ja) * 2010-05-31 2011-12-08 シャープ株式会社 半導体素子、薄膜トランジスタ基板及び表示装置
CN103854987B (zh) * 2012-12-04 2017-08-25 中芯国际集成电路制造(上海)有限公司 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法
KR20150112288A (ko) * 2014-03-27 2015-10-07 삼성전자주식회사 스트레처블 소자와 그 제조방법 및 스트레처블 소자를 포함하는 전자장치
US11955561B2 (en) * 2021-07-22 2024-04-09 Taiwan Semiconductor Manufacturing Company Limited Carrier modification devices for avoiding channel length reduction and methods for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
US6479837B1 (en) * 1998-07-06 2002-11-12 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display unit
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
JP2003037061A (ja) * 2001-07-24 2003-02-07 Sharp Corp 半導体薄膜およびその形成方法並びに半導体装置
US7232714B2 (en) * 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2005012030A (ja) * 2003-06-19 2005-01-13 Sharp Corp 結晶性半導体膜の製造方法、結晶性半導体膜、半導体装置の製造方法および半導体装置
JP4408668B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法および製造装置
JP2006077834A (ja) 2004-09-08 2006-03-23 Nsk Ltd ボールねじ機構
JP2007281421A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法
JP2007281420A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法

Also Published As

Publication number Publication date
KR20070093356A (ko) 2007-09-18
US7521712B2 (en) 2009-04-21
TW200802891A (en) 2008-01-01
US7598160B2 (en) 2009-10-06
KR101360302B1 (ko) 2014-02-10
JP2007281423A (ja) 2007-10-25
CN101038937A (zh) 2007-09-19
CN101038937B (zh) 2010-06-02
TWI342622B (enExample) 2011-05-21
US20080241981A1 (en) 2008-10-02
US20070212825A1 (en) 2007-09-13

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