JP4166449B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP4166449B2 JP4166449B2 JP2001229464A JP2001229464A JP4166449B2 JP 4166449 B2 JP4166449 B2 JP 4166449B2 JP 2001229464 A JP2001229464 A JP 2001229464A JP 2001229464 A JP2001229464 A JP 2001229464A JP 4166449 B2 JP4166449 B2 JP 4166449B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chuck body
- chuck
- adherend
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 99
- 238000001179 sorption measurement Methods 0.000 claims description 56
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 229920006254 polymer film Polymers 0.000 claims description 6
- 239000010408 film Substances 0.000 description 41
- 239000010409 thin film Substances 0.000 description 32
- 230000001681 protective effect Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 229920001721 polyimide Polymers 0.000 description 9
- 230000002265 prevention Effects 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000181 anti-adherent effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920002396 Polyurea Polymers 0.000 description 2
- 239000003911 antiadherent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001229464A JP4166449B2 (ja) | 2001-07-30 | 2001-07-30 | 真空処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001229464A JP4166449B2 (ja) | 2001-07-30 | 2001-07-30 | 真空処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003045949A JP2003045949A (ja) | 2003-02-14 |
| JP2003045949A5 JP2003045949A5 (enrdf_load_stackoverflow) | 2005-05-12 |
| JP4166449B2 true JP4166449B2 (ja) | 2008-10-15 |
Family
ID=19061809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001229464A Expired - Lifetime JP4166449B2 (ja) | 2001-07-30 | 2001-07-30 | 真空処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4166449B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7195532B2 (en) | 2003-02-18 | 2007-03-27 | Matsushita Electric Industrial Co., Ltd. | Process for manufacturing plasma display panel and substrate holder |
| JP4233897B2 (ja) * | 2003-03-14 | 2009-03-04 | シャープ株式会社 | 液晶表示装置の製造方法および液晶表示装置の製造装置 |
| US20060096946A1 (en) * | 2004-11-10 | 2006-05-11 | General Electric Company | Encapsulated wafer processing device and process for making thereof |
| JP2010034510A (ja) * | 2008-07-02 | 2010-02-12 | Murata Mfg Co Ltd | 静電チャック |
| JP5566117B2 (ja) * | 2009-05-27 | 2014-08-06 | 東京エレクトロン株式会社 | 静電吸着電極およびその製造方法、ならびに基板処理装置 |
| JP6067210B2 (ja) * | 2011-03-31 | 2017-01-25 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
| JP5665679B2 (ja) | 2011-07-14 | 2015-02-04 | 住友重機械工業株式会社 | 不純物導入層形成装置及び静電チャック保護方法 |
| KR101196441B1 (ko) | 2011-12-20 | 2012-11-01 | 이준호 | 정전 척의 리페어 방법 |
| CN102994982B (zh) * | 2012-11-23 | 2015-06-17 | 京东方科技集团股份有限公司 | 等离子体增强化学气相沉积电极板装置、沉积方法及沉积装置 |
| NL2010527A (en) * | 2013-03-27 | 2014-09-30 | Asml Netherlands Bv | Object holder, lithographic apparatus, device manufacturing method, and method of manufacturing an object holder. |
| JP5929835B2 (ja) * | 2013-05-29 | 2016-06-08 | 住友金属鉱山株式会社 | 長尺樹脂フィルムの表面処理装置及び表面処理方法、並びに該表面処理装置を備えたロールツーロール成膜装置 |
| CN106575720B (zh) * | 2014-05-09 | 2019-01-15 | 应用材料公司 | 具有保护覆盖物的基板载体系统 |
| JP6174210B2 (ja) * | 2016-08-18 | 2017-08-02 | 芝浦メカトロニクス株式会社 | 載置台およびプラズマ処理装置 |
-
2001
- 2001-07-30 JP JP2001229464A patent/JP4166449B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003045949A (ja) | 2003-02-14 |
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