JP4166417B2 - ポジ型レジスト積層物 - Google Patents

ポジ型レジスト積層物 Download PDF

Info

Publication number
JP4166417B2
JP4166417B2 JP2000164833A JP2000164833A JP4166417B2 JP 4166417 B2 JP4166417 B2 JP 4166417B2 JP 2000164833 A JP2000164833 A JP 2000164833A JP 2000164833 A JP2000164833 A JP 2000164833A JP 4166417 B2 JP4166417 B2 JP 4166417B2
Authority
JP
Japan
Prior art keywords
group
repeating unit
acid
formula
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000164833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001222112A (ja
JP2001222112A5 (enExample
Inventor
昭一郎 安波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000164833A priority Critical patent/JP4166417B2/ja
Publication of JP2001222112A publication Critical patent/JP2001222112A/ja
Publication of JP2001222112A5 publication Critical patent/JP2001222112A5/ja
Application granted granted Critical
Publication of JP4166417B2 publication Critical patent/JP4166417B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000164833A 1999-11-29 2000-06-01 ポジ型レジスト積層物 Expired - Fee Related JP4166417B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000164833A JP4166417B2 (ja) 1999-11-29 2000-06-01 ポジ型レジスト積層物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33830199 1999-11-29
JP11-338301 1999-11-29
JP2000164833A JP4166417B2 (ja) 1999-11-29 2000-06-01 ポジ型レジスト積層物

Publications (3)

Publication Number Publication Date
JP2001222112A JP2001222112A (ja) 2001-08-17
JP2001222112A5 JP2001222112A5 (enExample) 2006-01-12
JP4166417B2 true JP4166417B2 (ja) 2008-10-15

Family

ID=26576060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000164833A Expired - Fee Related JP4166417B2 (ja) 1999-11-29 2000-06-01 ポジ型レジスト積層物

Country Status (1)

Country Link
JP (1) JP4166417B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4498690B2 (ja) * 2002-05-30 2010-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 新規樹脂およびそれを含有するフォトレジスト組成物
US7459263B2 (en) * 2003-12-19 2008-12-02 Eastman Kodak Company Optical recording media with triplet-sensitized isomerization
JP2011502286A (ja) * 2007-10-30 2011-01-20 ブルーワー サイエンス アイ エヌ シー． 光像形成性分岐ポリマー
JP6579428B2 (ja) * 2015-07-16 2019-09-25 川崎化成工業株式会社 置換オキシ−２−ナフチル（メタ）アクリレート化合物、その製造方法及びその用途
TWI702263B (zh) * 2017-12-31 2020-08-21 美商羅門哈斯電子材料有限公司 光阻劑面塗層組合物及處理光阻劑組合物之方法
CN120344573A (zh) * 2022-12-28 2025-07-18 日本瑞翁株式会社 共聚物橡胶、橡胶组合物以及橡胶交联物

Also Published As

Publication number Publication date
JP2001222112A (ja) 2001-08-17

Similar Documents

Publication Publication Date Title
JP4139575B2 (ja) シリコン含有２層レジスト用下層レジスト組成物
JP4253423B2 (ja) ポジ型レジスト積層物
JP2003005375A (ja) ポジ型レジスト組成物
JP2002303978A (ja) ポジ型レジスト組成物
JP3948506B2 (ja) ポジ型フォトレジスト組成物
JP2001318465A (ja) ポジ型フォトレジスト組成物
JP3967051B2 (ja) ポジ型レジスト積層物
JP4166417B2 (ja) ポジ型レジスト積層物
JP4210407B2 (ja) レジスト積層物
JP3731777B2 (ja) ポジ型レジスト組成物
JP3929648B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4276773B2 (ja) 電子線又はｘ線用ネガ型レジスト組成物
JP3491825B2 (ja) ポジ型フォトレジスト組成物
JP2001117232A (ja) 遠紫外線露光用ポジ型レジスト組成物
JP2003177538A (ja) ポジ型レジスト組成物
JP4217369B2 (ja) ２層レジスト
JP2002365802A (ja) ネガ型レジスト組成物
JP2001296661A (ja) ポジ型フォトレジスト組成物
JP4240857B2 (ja) ポジ型レジスト組成物
JP2004198724A (ja) ネガ型レジスト組成物
JP2001222111A (ja) ポジ型レジスト積層物
JP2000338673A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4287982B2 (ja) ２層レジスト上層用ポジ型シリコーン含有レジスト組成物及びパターン形成方法
JP2001154359A (ja) ポジ型レジスト積層物
JP3444844B2 (ja) ポジ型フォトレジスト組成物

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051116

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051116

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060324

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080416

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080709

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080730

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110808

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110808

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120808

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees