JP4162165B2 - 量子井戸構造光半導体素子 - Google Patents

量子井戸構造光半導体素子 Download PDF

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JP4162165B2
JP4162165B2 JP22916298A JP22916298A JP4162165B2 JP 4162165 B2 JP4162165 B2 JP 4162165B2 JP 22916298 A JP22916298 A JP 22916298A JP 22916298 A JP22916298 A JP 22916298A JP 4162165 B2 JP4162165 B2 JP 4162165B2
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quantum well
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quantum
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Japanese (ja)
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JP2000058964A5 (https=
JP2000058964A (ja
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達也 森岡
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Sharp Corp
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Sharp Corp
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JP22916298A 1998-08-13 1998-08-13 量子井戸構造光半導体素子 Expired - Fee Related JP4162165B2 (ja)

Priority Applications (1)

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JP22916298A JP4162165B2 (ja) 1998-08-13 1998-08-13 量子井戸構造光半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22916298A JP4162165B2 (ja) 1998-08-13 1998-08-13 量子井戸構造光半導体素子

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JP2000058964A JP2000058964A (ja) 2000-02-25
JP2000058964A5 JP2000058964A5 (https=) 2005-10-13
JP4162165B2 true JP4162165B2 (ja) 2008-10-08

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JP22916298A Expired - Fee Related JP4162165B2 (ja) 1998-08-13 1998-08-13 量子井戸構造光半導体素子

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI288435B (en) 2000-11-21 2007-10-11 Matsushita Electric Industrial Co Ltd Semiconductor device and equipment for communication system
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2004200647A (ja) * 2002-12-04 2004-07-15 Ricoh Co Ltd 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システムおよび半導体発光素子の製造方法
KR100915056B1 (ko) * 2002-12-23 2009-09-02 엘지전자 주식회사 질화물 반도체 레이저 다이오드
JP4494721B2 (ja) * 2003-02-13 2010-06-30 浜松ホトニクス株式会社 量子カスケードレーザ
US7359418B2 (en) 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
JP2005150139A (ja) * 2003-11-11 2005-06-09 Ricoh Co Ltd 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システム
JP4643184B2 (ja) * 2004-06-29 2011-03-02 シャープ株式会社 半導体素子、システムおよび半導体素子の製造方法
JP2007165798A (ja) * 2005-12-16 2007-06-28 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP4952151B2 (ja) * 2006-09-04 2012-06-13 住友電気工業株式会社 Ｉｉｉ−ｖ化合物半導体を成長する方法

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