JP2000058964A5 - - Google Patents
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- Publication number
- JP2000058964A5 JP2000058964A5 JP1998229162A JP22916298A JP2000058964A5 JP 2000058964 A5 JP2000058964 A5 JP 2000058964A5 JP 1998229162 A JP1998229162 A JP 1998229162A JP 22916298 A JP22916298 A JP 22916298A JP 2000058964 A5 JP2000058964 A5 JP 2000058964A5
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- group
- layer
- quantum
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 229910021478 group 5 element Inorganic materials 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22916298A JP4162165B2 (ja) | 1998-08-13 | 1998-08-13 | 量子井戸構造光半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22916298A JP4162165B2 (ja) | 1998-08-13 | 1998-08-13 | 量子井戸構造光半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000058964A JP2000058964A (ja) | 2000-02-25 |
| JP2000058964A5 true JP2000058964A5 (https=) | 2005-10-13 |
| JP4162165B2 JP4162165B2 (ja) | 2008-10-08 |
Family
ID=16887765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22916298A Expired - Fee Related JP4162165B2 (ja) | 1998-08-13 | 1998-08-13 | 量子井戸構造光半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4162165B2 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI288435B (en) | 2000-11-21 | 2007-10-11 | Matsushita Electric Industrial Co Ltd | Semiconductor device and equipment for communication system |
| US6927412B2 (en) | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
| JP2004200647A (ja) * | 2002-12-04 | 2004-07-15 | Ricoh Co Ltd | 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システムおよび半導体発光素子の製造方法 |
| KR100915056B1 (ko) * | 2002-12-23 | 2009-09-02 | 엘지전자 주식회사 | 질화물 반도체 레이저 다이오드 |
| JP4494721B2 (ja) * | 2003-02-13 | 2010-06-30 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
| US7359418B2 (en) | 2003-02-13 | 2008-04-15 | Hamamatsu Photonics K.K. | Quantum cascade laser |
| JP2005150139A (ja) * | 2003-11-11 | 2005-06-09 | Ricoh Co Ltd | 半導体発光素子および光送信モジュールおよび光送受信モジュールおよび光通信システム |
| JP4643184B2 (ja) * | 2004-06-29 | 2011-03-02 | シャープ株式会社 | 半導体素子、システムおよび半導体素子の製造方法 |
| JP2007165798A (ja) * | 2005-12-16 | 2007-06-28 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
| JP4952151B2 (ja) * | 2006-09-04 | 2012-06-13 | 住友電気工業株式会社 | Ｉｉｉ−ｖ化合物半導体を成長する方法 |
-
1998
- 1998-08-13 JP JP22916298A patent/JP4162165B2/ja not_active Expired - Fee Related
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